Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NEC UPA Search Results

    NEC UPA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D12320VTE20V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), TFQFP, / Visit Renesas Electronics Corporation
    D12324SVF25V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), FQFP, /Tray Visit Renesas Electronics Corporation
    D12373RVFQ33V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), LQFP, /Tray Visit Renesas Electronics Corporation
    D12670VFC33V Renesas Electronics Corporation High-end Microcontrollers for Automotive Control and Factory Automation Applications (Non Promotion), FQFP, /Tray Visit Renesas Electronics Corporation
    DF2111BVT10BV Renesas Electronics Corporation Microcontrollers for Office Equipment Applications (Non Promotion) Visit Renesas Electronics Corporation

    NEC UPA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		PDF 08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    lm317cz

    Abstract: UMEB78K0ST113 ADAPTER circuit AC TO DC 220V TO 6V A78000 uCOM78k0 PD78P014 COM78k0 80286 microprocessor schematics 80286 cpu NEC GAL programmer schematic
    Text: NEC Electronics Europe GmbH 78K0 Starter Kit User's Manual UMEB78K0ST113*11 NEC Electronics (Europe) GmbH 78K0 Starter Kit User's Manual The Information in this document is subject to change without notice. No part of this document may be copied or reproduced in any form without the prior written


    Original     		PDF UMEB78K0ST113 COM78K0 RS232 lm317cz ADAPTER circuit AC TO DC 220V TO 6V A78000 uCOM78k0 PD78P014 80286 microprocessor schematics 80286 cpu NEC GAL programmer schematic

    AUTOMATIC light dim dip CONTROLLER

    Abstract: data sheet 1734352-1 LXML-PM01 RS-232 protocol omron APDS-9005 rs232 level converter dmx rs232 converter dmx Luxeon K2 driver schematic Thermistor NTC-10 dmx-512
    Text: User’s Manual 78K0 - Shine It! Demonstration Board for NEC Electronics µPD78f8024 High-CurrentDrive/LED Microcontroller Document No. U19610EE3V0UM00 Date Published May 2009 NEC Electronics Europe GmbH 78K0 - Shine It! • The information in this document is current as of June, 2008. The information is subject to change


    Original     		PDF PD78f8024 U19610EE3V0UM00 AUTOMATIC light dim dip CONTROLLER data sheet 1734352-1 LXML-PM01 RS-232 protocol omron APDS-9005 rs232 level converter dmx rs232 converter dmx Luxeon K2 driver schematic Thermistor NTC-10 dmx-512

    NEC uPA101G

    Abstract: UPA101B UPA101G
    Text: NEC/ CALIFORNIA 5bE D NEC b4274m 00GSS7S ÖS3 * N E C C UPA101B UPA101G TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: 9 GHz Single Transistors (Units in mm) OUTLINE BS14 T0PVIEW <^° 8 • OUTSTANDING hFE LINEARITY


    OCR Scan     		PDF b4274m G002575 UPA101B UPA101G UPA101B: 14-pin UPA101G: NEC uPA101G UPA101B UPA101G

    nec transistor

    Abstract: transistor and schematic symbols
    Text: NEC-TRANSISTOR ARRAY FEATURES UPA101G CONNECTION DIAGRAM BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: 9 GHz Single Transistors (Top view) UPA101G OUTSTANDING hFE LINEARITY SMALL PACKAGE _1 1_ 1- TAPE AND REEL PACKAGING OPTION


    OCR Scan     		PDF UPA101G UPA101G b427525 UPA101G-E1 2500/REEL b4275B5 00b5fl04 nec transistor transistor and schematic symbols

    Untitled

    Abstract: No abstract text available
    Text: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE CONNECTION DIAGRAM (Topview) UPA102G 14 LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE


    OCR Scan     		PDF UPA102G UPA102G OUTUNEG14 UPA102G-E1 2500/REEL

    nec transistor

    Abstract: No abstract text available
    Text: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 G H z Single Transistors • OUTSTANDING hFE LINEARITY UPA102G CONNECTION DIAGRAM (Top view ) UPA102G 14 • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE


    OCR Scan     		PDF UPA102G UPA102G hM27S25 UPA102G-E1 2500/REEL nec transistor

    Silicon Bipolar Transistor Q6

    Abstract: No abstract text available
    Text: NEC-TRANSISTOR ARRAY UPA101G CONNECTION DIAGRAM FEATURES Top View BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: UPA101B (9 GHz Single Transistors) 14 OUTSTANDING hFE LINEARITY 13 12 11 10 9 6 TWO PACKAGE OPTIONS: UPA101B: Superior thermal dissipation due to studded


    OCR Scan     		PDF UPA101G UPA101B UPA101B: 14-pin UPA101G: UPA101B, UPA101G UPA101B UPA101Q Silicon Bipolar Transistor Q6

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T_ NEC MOS FIELD EFFECT TRANSISTOR ¿¿PA611TA N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA611TA is a switching device which can be driven directly by a


    OCR Scan     		PDF PA611TA uPA611TA SC-74 D11707EJ1V0DS00

    k 3531 transistor

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TF OUTLINE DIMENSIONS Units FEATURES • • • LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: • SMALL PACKAGE STYLE: in mm P ackage Outline T S 06 (Top View)


    OCR Scan     		PDF UPA826TF NE685 UPA826TF for-27 UPA826TF-T1 24-Hour k 3531 transistor

    Untitled

    Abstract: No abstract text available
    Text: NEC UPA103B UPA103G TRANSISTOR ARRAY CONNECTION DIAGRAM FEATURES FIVE MONOLITHIC 9 GHz fr TRANSISTORS: Two of these use a common emitter pin and can be jsed as differential amplifiers Top View UPA103B 14 13 12 11 10 9 8 OUTSTANDING hFE LINEARITY TWO PACKAGE OPTIONS:


    OCR Scan     		PDF JPA103B: UPA103G: 14-pin UPA103B UPA103G UPA103B UPA103B/G UPA103G

    HA 12045

    Abstract: IC 7487 TRANSISTOR 023 3010 pin configuration ic 7421 pt 6964 pin IC 7479 k 3531 transistor
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA826TF OUTLINE DIMENSIONS Units in mm LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Cre = 0.4 pF TYP SMALL PACKAGE STYLE: 2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package


    OCR Scan     		PDF UPA826TF NE685 UPA826TF UPA826TF-T1 HA 12045 IC 7487 TRANSISTOR 023 3010 pin configuration ic 7421 pt 6964 pin IC 7479 k 3531 transistor

    9013 npn transistor pin view

    Abstract: pin configuration of 7496 IC NEC 14324 ic ma 4810 15251 hfe 4538 UPA827TF pin configuration ic 7448 IC 7432 5942
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • UPA827TF PACKAGE DRAWING Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: Package Outline TS06 (Top View) IS 2 1 EI2 = 9 dB T Y P a t f = 2 G H z, V ce = 2 V, Ic = 7 mA


    OCR Scan     		PDF UPA827TF UPA827TF-T1 9013 npn transistor pin view pin configuration of 7496 IC NEC 14324 ic ma 4810 15251 hfe 4538 UPA827TF pin configuration ic 7448 IC 7432 5942

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA828TF OUTLINE DIMENSIONS Unit in mm LOW NOISE: NF = 1.3 dB TYP at f = 2 GHz, V ce = 2 V, Ic = 3 mA Package Outline TS 06 (Top View) -* HIGH GAIN: 2.1 ±0.1 i ► r» — 1.25± 0


    OCR Scan     		PDF NE687 UPA828TF UPA828TF mirror59 UPA828TF-T1

    CD 5888 CB

    Abstract: transistor BU 5027 CD 5888 ic cd 5220 buffer ic transistor d 13009 UPA831TF CD 5888 cb ic cd 4847 pa831
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TF FEATURES Units in mm OUTLINE DIMENSIONS LOW NOISE: Package Outline TS06 Q1:NF = 1.2 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, Ic = 7 mA


    OCR Scan     		PDF UPA831TF NE856, NE681) PA831TF NE85630 NE68130 UPA831TF-T1 UPA834TF CD 5888 CB transistor BU 5027 CD 5888 ic cd 5220 buffer ic transistor d 13009 UPA831TF CD 5888 cb ic cd 4847 pa831

    ta 8653 n

    Abstract: ha 1452 Amplifiers" ha 1452 Amplifiers IC 8208 HA 12045 ic MAX 8997
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA835TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA — Q2.NF = 1.2 dB TYP at f = 1 GHz, Vce = 3 V, Ic = 7 mA


    OCR Scan     		PDF UPA835TF NE685, NE856) UPA835TF NE68530 NE85630 UPA835TF-T1 UPA832TF ta 8653 n ha 1452 Amplifiers" ha 1452 Amplifiers IC 8208 HA 12045 ic MAX 8997

    UPA831TF

    Abstract: NE856
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA834TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q1:NF = 1.4 dB TYP at f = 1 G Hz, V ce = 3 V, Ic = 7 mA Q 2:NF = 1.2 dB TYP at f = 1 G Hz, V ce = 3 V, Ic = 7 mA


    OCR Scan     		PDF UPA834TF NE681, NE856) UPA834TF NE68130 NE85630 UPA834TF-T1 831TF UPA831TF NE856

    A103G

    Abstract: a103g transistors
    Text: NEC TRANSISTOR ARRAY FEATURES_ UPA103G CONNECTION DIAGRAM Top view • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: UPA103G T w o of th e s e use a c o m m o n e m itte r pin an d ca n b e 14 u sed as d ifferen tial am p lifiers 13 12 11


    OCR Scan     		PDF UPA103G UPA103G UPA103G-E1 2500/REEL A103G a103g transistors

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC Compound Field Effect Power Transistor _j PA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The ¿¡PA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, m otor and lamp driver.


    OCR Scan     		PDF PA1572B PA1572B uPA1572BH 10Pin I-1202 IEI-1209 10535E 10943X EI-1202 X10679E

    nec 14312 transistor

    Abstract: pt 9795 tp 4056 configuration of ic 7819
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • UPA834TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 Q1 :NF = 1.4 dB T Y P at f = 1 G Hz, V ce = 3 V, Ic = 7 mA Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V ce = 3 V, Ic = 7 mA


    OCR Scan     		PDF UPA834TF NE681, NE856) UPA834TF UPA834TF-T1 24-Hour nec 14312 transistor pt 9795 tp 4056 configuration of ic 7819

    5252 F 1005

    Abstract: 6681 - 250 transistor npn d 5058 cd 4027
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA836TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package O utline TS06 Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V ce = 3 V, Ic = 3 mA Q 2:N F = 1.7 dB T Y P at f = 2 G Hz, V ce = 1 V, Ic = 3 mA


    OCR Scan     		PDF UPA836TF NE685, NE688) UPA836TF UPA836TF-T1 24-Hour 5252 F 1005 6681 - 250 transistor npn d 5058 cd 4027