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    UPA834TF Search Results

    UPA834TF Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UPA834TF NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE Original PDF
    UPA834TF NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR Original PDF
    uPA834TF NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACK Original PDF
    UPA834TF-T1 NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE Original PDF
    uPA834TF-T1 NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACK Original PDF

    UPA834TF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPA831TF

    Abstract: NE681 NE68130 NE856 NE85630 S21E UPA831TF-T1 UPA834TF 7371 802 transistor on 4409
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA 2.1 ± 0.1 1.25 ± 0.1 HIGH GAIN: Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA •


    Original     		PDF NE856, NE681) UPA831TF UPA831TF UPA831TF-T1 NE85630 NE68130 UPA834TF 24-Hour NE681 NE68130 NE856 NE85630 S21E UPA831TF-T1 7371 802 transistor on 4409

    OF IC 7912

    Abstract: pt 9795 on 5295 transistor nec 14312 transistor UPA831TF lb 11885 NE681 NE68130 NE856 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Package Outline TS06 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA


    Original     		PDF UPA834TF NE681, NE856) UPA834TF NE68130 UPA834TF-T1 NE85630 UPA831TF 24-Hour OF IC 7912 pt 9795 on 5295 transistor nec 14312 transistor lb 11885 NE681 NE68130 NE856 S21E

    EM 4093 007

    Abstract: nec 14312 transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA834TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package Outline TS06 Q1 :NF = 1.4 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V , Ic = 7 mA


    OCR Scan     		PDF UPA834TF NE681, NE856) NE68130 NE85630 PA834TF-T1 24-Hour EM 4093 007 nec 14312 transistor

    nec 14312 transistor

    Abstract: pt 9795 tp 4056 configuration of ic 7819
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • UPA834TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 Q1 :NF = 1.4 dB T Y P at f = 1 G Hz, V ce = 3 V, Ic = 7 mA Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V ce = 3 V, Ic = 7 mA


    OCR Scan     		PDF UPA834TF NE681, NE856) UPA834TF UPA834TF-T1 24-Hour nec 14312 transistor pt 9795 tp 4056 configuration of ic 7819

    UPA831TF

    Abstract: NE856
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA834TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q1:NF = 1.4 dB TYP at f = 1 G Hz, V ce = 3 V, Ic = 7 mA Q 2:NF = 1.2 dB TYP at f = 1 G Hz, V ce = 3 V, Ic = 7 mA


    OCR Scan     		PDF UPA834TF NE681, NE856) UPA834TF NE68130 NE85630 UPA834TF-T1 831TF UPA831TF NE856

    CD 5888 CB

    Abstract: transistor BU 5027 CD 5888 ic cd 5220 buffer ic transistor d 13009 UPA831TF CD 5888 cb ic cd 4847 pa831
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TF FEATURES Units in mm OUTLINE DIMENSIONS LOW NOISE: Package Outline TS06 Q1:NF = 1.2 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, Ic = 7 mA


    OCR Scan     		PDF UPA831TF NE856, NE681) PA831TF NE85630 NE68130 UPA831TF-T1 UPA834TF CD 5888 CB transistor BU 5027 CD 5888 ic cd 5220 buffer ic transistor d 13009 UPA831TF CD 5888 cb ic cd 4847 pa831

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363