NEC GAAS Search Results

NEC GAAS Result Highlights (5)

Part	Manufacturer	Description
D12320VTE20V	Renesas Electronics Corporation	Microcontrollers for General Purpose System Control Applications (Non Promotion), TFQFP, /
D12324SVF25V	Renesas Electronics Corporation	Microcontrollers for General Purpose System Control Applications (Non Promotion), FQFP, /Tray
D12373RVFQ33V	Renesas Electronics Corporation	Microcontrollers for General Purpose System Control Applications (Non Promotion), LQFP, /Tray
D12670VFC33V	Renesas Electronics Corporation	High-end Microcontrollers for Automotive Control and Factory Automation Applications (Non Promotion), FQFP, /Tray
DF2111BVT10BV	Renesas Electronics Corporation	Microcontrollers for Office Equipment Applications (Non Promotion)

NEC GAAS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L	PDF
SMD M05 sot Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial	Original	08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters	PDF
UAA 1006 Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71 Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH	Original	D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71	PDF
nec book Abstract: transister relay book NEC RELAY Text: NEC Semiconductor Data Book List NEC Semiconductor Data Book CD-ROM List April 1999 Following is the list of the Semiconductor Data Books NEC has published. If you need a copy, please ask our sales representative. Title / Items Memory (English / Japanese)	Original	78K/0S, 78K/0) 16-bit 78K/IV) 32-bit nec book transister relay book NEC RELAY	PDF
PA101B Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00 Text: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.	Original	PA101 PA102 PA103 PA104 P10944EJ2V0AN00 PA101B PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00	PDF
NEC RELAY Abstract: transister NEC fet nec V830 mcu NEC Rambus NEC V810 Text: NEC 半導体データ・ブック一覧表 NEC 半導体データ・ブック CD-ROM 一覧表（1999 年 4 月現在）現在，NEC では下記の半導体データ・ブック CD-ROM を発行しています。最寄りの NEC 半導体販売窓口までご請求ください。	Original	78K/0S, 78K/0) 16MCU 78K/IV) 32MPU NEC RELAY transister NEC fet nec V830 mcu NEC Rambus NEC V810	PDF
NEC 10F Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book Text: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.	OCR Scan	devic87 P12647EJ3V0PF00 NEC 10F low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book	PDF
NEC Ga FET marking L Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima	OCR Scan	GET-30749, GET-30749 NE29200 NE674 uPG501B uPG501P uPG503B uPG503P uPG506B NEC Ga FET marking L tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a	PDF
NE1069L-4B Abstract: NE710 Text: NEC/ CALIFORNIA t4S741M 1SE D NEC r-37'?0 00DlSb3 2 4W, L-S BAND POWER GaAs MESFET NE1069L-4B OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OPERATION OUTLINE T-38 • HIGH POWER OUTPUT • HIGH GAIN • HIGH POWER ADDED EFFICIENCY • HIGH RELIABILITY	OCR Scan	00DlSb3 NE1069L-4B NE1069L-4B b4S7414 00G15b4 NE710	PDF
Untitled Abstract: No abstract text available Text: I ^ NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES Units in mm UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 ± 0.1 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz (LEADS 2,4,6,8) 0.6 1.27 + 0.1	OCR Scan	UPG100B UPG100B 3260Jay	PDF
2SK571 Abstract: NE720 NE72084 NE72000 NE72089 2SK571 equivalent ga 132 2SK57-1 Text: NEC/ b427mM QQ022TD 317 «NE CC SbE D CALIFORNIA NEC GENERAL PURPOSE GaAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LOW COST Units in mm NE72000 (CHIP) (Units In pm) • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz i 35 • HIGH ASSOCIATED GAIN	OCR Scan	b427mM QQ022TD NE720 NE72000 Rn/50 NE72000 2SK571 NE72084 NE72089 2SK571 equivalent ga 132 2SK57-1	PDF
UPG100B Abstract: UPG100 UPG100P power amplifier s band ghz mhz Low Noise Amplifier 0.5 - 3.0 GHz Text: I NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 + 0.1 • LOW IMOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz Units in mm 1.27 ± 0-1 0 A {LEAD S 1,3,5,7)	OCR Scan	UPG100B 3260Jay UPG100 UPG100P power amplifier s band ghz mhz Low Noise Amplifier 0.5 - 3.0 GHz	PDF
2SK281 Abstract: 203l2 NE218 NE21889 NE21800 Text: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure	OCR Scan	Lj457414 NE21800 NE21889 NE218 NE21800) 2SK281 203l2 NE21889	PDF
2SK425 Abstract: 2sk423 2SK424 2SK530 2SK422 2SK426 2SK407 2SK425-13 2SK428 2SK433 Text: A f m s 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 L (S) 2SK417 2SK418 2SK419 2SK420 2SK421 2SK422 2SK423 2SK424 2SK425 2SK426 2SK427 2SK428 2SK429(L)(S) 2SK430(L) (S) 2SK431 ' 2SK433 2SK435 2SK436 2SK437 a NEC NEC U aL BÍL	OCR Scan	2SK406 2SK407 2SK408 2SK409 2SK410 2SK531 2SK421 2SK422 2SK423 2SK424 2SK425 2sk423 2SK424 2SK530 2SK422 2SK426 2SK425-13 2SK428 2SK433	PDF

2SK571 Abstract: ne72089 ne72084 NE72000 NE72089A 2SK354A 2SK571 equivalent 2SK57-1 NE720 NE7200 Text: NEC/ bM274m SbE D CALIFORNIA NEC OQOaa^D 3*^7 BINEC C T - 3 ,\- z £ GENERAL PURPOSE G aAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LO W C O S T Units in mm NE72000 (CHIP) (Units In pm) • LO W N O IS E PIQURE 100- • 0.8 dB at 4 GHz 1.7 dB at 8 GHz	OCR Scan	bM274m 0Q022TD NE720 NE72000) NE72084 NE72089A) NE72000 2SK571 ne72089 NE72089A 2SK354A 2SK571 equivalent 2SK57-1 NE7200	PDF
6-pin optocoupler Abstract: No abstract text available Text: NEC LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6 PIN OPTOCOUPLER PS2651 PS2652L2 FEATURES_ DESCRIPTION_ • PS2651 and PS2652 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor	OCR Scan	PS2651 PS2652L2 PS2651 PS2652 PS2651L2 PS2652L2 PS2651, PS2652, 6-pin optocoupler	PDF
Untitled Abstract: No abstract text available Text: N E C ELECTRONICS INC NEC • 6427525 N E C ~72 ELECTRONICS 72C 09235 INCi D '_TL^ ± r.^ L D F \| b 4 5 7 S a S OODTSHS J 4N25 PHOTO COUPLER s in g le t r a n s i s t o r : NEC Electronics Inc. NEPOC SERIES Description Features The' 4N25 is an optically coupled isolator containing a	OCR Scan	2500VOc	PDF
nec 1441 Abstract: No abstract text available Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT iuPG172GV PDC1.5GHZ-VARIABLE GAIN PA DRIVER AMPLIFIER DESCRIPTION ¿iPG172GV is a GaAs FET PA driver amplifier with variable gain function which was developed for PDC Personal Digital Cellular application.	OCR Scan	iuPG172GV iPG172GV IR35-00-3 WS60-00-1 nec 1441	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET NEC PHOTOCOUPLER PS2653,PS2654,PS2653L2,PS2654L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6-PIN PHOTOCOUPLER -NEPOC Series- DESCRIPTION The PS2653, PS2654, PS2653L2, PS2564L2 are optically coupled isolators containing a GaAs light emitting diode	OCR Scan	PS2653 PS2654 PS2653L2 PS2654L2 PS2653, PS2654, PS2653L2, PS2564L2	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET NEC PHOTOCOUPLER PS2607,PS2608,PS2607L,PS2608L HIGH ISOLATION VOLTAGE AC INPUT, HIGH CTR 6-PIN PHOTOCOUPLER -NEPOC Series- DESCRIPTION The PS2607, PS2608, PS2607L, PS2608L are optically coupled isolators containing GaAs light emitting diodes	OCR Scan	PS2607 PS2608 PS2607L PS2608L PS2607, PS2608, PS2607L, PS2608L	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT uPG152TA L-BAND SPDT SWITCH DESCRIPTION The ¿iPG152TA is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application.	OCR Scan	uPG152TA iPG152TA WS60-00-1 C10535E)	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT uPG152TA L-BAND SPDT SWITCH DESCRIPTION The ¿iPG152TA is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application.	OCR Scan	iPG152TA C10535E)	PDF
2SJ83 Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198 Text: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m	OCR Scan	2SK19600 2SK197 2SK198 2SK199 2SK201 2SK217 2SK218 2SK220 2SK221 2SS222 2SJ83 2SK238 2SJ82 2SK241 2SK240 2SK203 2S119	PDF
Nec 1441 Abstract: No abstract text available Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿iPG172GV PDC1.5GHZ-VARIABLE GAIN PA DRIVER AMPLIFIER DESCRIPTION //PG 172G V is a GaAs FET PA driver amplifier with variable gain function which was developed for PDC Personal Digital Cellular application.	OCR Scan	uPG172GV Nec 1441	PDF

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NEC GAAS Search Results

NEC GAAS Result Highlights (5)

NEC GAAS Datasheets Context Search

MRF947T1 equivalent

SMD M05 sot

UAA 1006

nec book

PA101B

NEC RELAY

NEC 10F

NEC Ga FET marking L

NE1069L-4B

Untitled

2SK571

UPG100B

2SK281

2SK425

2SK571

6-pin optocoupler

Untitled

nec 1441

Untitled

Untitled

Untitled

Untitled

2SJ83

Nec 1441