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    2SK2202-E Renesas Electronics Corporation Nch Single Power Mosfet 120V 7A 400Mohm To-220Fm Visit Renesas Electronics Corporation
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    2SK220 Price and Stock

    Rubycon Corporation 420USK220MEFCSN25X30

    Aluminum Electrolytic Capacitors - Snap In GENERAL PURPOSE ELECTROLYTIC CAPACITORS
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    Mouser Electronics 420USK220MEFCSN25X30
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    Rubycon Corporation 420USK220MEFCSN22X35

    Aluminum Electrolytic Capacitors - Snap In GENERAL PURPOSE ELECTROLYTIC CAPACITORS
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    Mouser Electronics 420USK220MEFCSN22X35
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    Rubycon Corporation 400USK220MEFCSN22X30

    Aluminum Electrolytic Capacitors - Snap In GENERAL PURPOSE ELECTROLYTIC CAPACITORS
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    Mouser Electronics 400USK220MEFCSN22X30
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    Rubycon Corporation 400USK220MEFCSN25X25

    Aluminum Electrolytic Capacitors - Snap In GENERAL PURPOSE ELECTROLYTIC CAPACITORS
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    Mouser Electronics 400USK220MEFCSN25X25
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    Toshiba America Electronic Components 2SK2200

    3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
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    Quest Components 2SK2200 13
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    2SK220 Datasheets (65)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK220 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK220 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK220 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK220 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK2200 Toshiba Original PDF
    2SK2200 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2200 Toshiba N-Channel MOSFET Original PDF
    2SK2200 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2200 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2200 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications Scan PDF
    2SK2200 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    2SK2201 Toshiba Original PDF
    2SK2201 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2201 Toshiba N-Channel MOSFET Original PDF
    2SK2201 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2201 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2201 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications Scan PDF
    2SK2201 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    2SK2201(2-7J1B) Toshiba 2SK2201 - TRANSISTOR 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power Original PDF
    2SK2201LBTE16L Toshiba 2SK2201 - TRANSISTOR 3 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power Original PDF

    2SK220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK245

    Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H


    Original     		PDF 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK245 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240

    2SK2206

    Abstract: Hitachi DSA001652
    Text: 2SK2206 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance Low drive current High speed switching 4 V gate drive device can be driven from 5 V source Suitable for DC-DC converter, Motor control


    Original     		PDF 2SK2206 O-220CFM D-85622 2SK2206 Hitachi DSA001652

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK2202 Silicon N-Channel MOS FET ADE-208-089 A 2nd. Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter


    Original     		PDF 2SK2202 ADE-208-089 Hitachi DSA00279

    2SK2201

    Abstract: No abstract text available
    Text: 2SK2201 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2201 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.28 Ω (typ.) l High forward transfer admittance


    Original     		PDF 2SK2201 2SK2201

    2SK2208

    Abstract: No abstract text available
    Text: 2SK2208 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 900 V V(BR) DSS VGSS ±30 V I GSS ID ±5 A I DSS ±20 A VTH 2.0 3.0 75 (Tc = 25ºC) W Re (yfs) 2.0 3.0 400 ID (pulse) *1


    Original     		PDF 2SK2208 FM100 2SK2208

    2SK2208

    Abstract: No abstract text available
    Text: 2SK2208 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 900 V V(BR) DSS VGSS ±30 V I GSS ID ±5 A I DSS ±20 A VTH 2.0 2.0 ID (pulse) *1 PD W Re (yfs) RDS (on) 2.5 ±100 nA


    Original     		PDF 2SK2208 FM100 2SK2208

    2SK2121

    Abstract: 2SK2203
    Text: 2SK2203 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V cource • Suitable for Switching regulator, DC – DC


    Original     		PDF 2SK2203 2SK2121. 2SK2121 2SK2203

    2SK2203

    Abstract: DSA003639
    Text: 2SK2203 Silicon N-Channel MOS FET ADE-208-1350 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter


    Original     		PDF 2SK2203 ADE-208-1350 2SK2203 DSA003639

    2SK2201

    Abstract: No abstract text available
    Text: 2SK2201 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2201 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.28 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SK2201 25transportation 2SK2201

    2SK2200

    Abstract: No abstract text available
    Text: 2SK2200 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2200 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.28 Ω (typ.) l High forward transfer admittance


    Original     		PDF 2SK2200 2SK2200

    diode U1J

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O S V 2SK2201 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE APPLICATIONS 4V Gate Drive


    OCR Scan     		PDF 2SK2201 0-28H -20kil) diode U1J

    2SK2200

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2200 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ± 0.2


    OCR Scan     		PDF 2SK2200

    Untitled

    Abstract: No abstract text available
    Text: 2SK2203 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V cource • Suitable for Switching regulator, DC - DC


    OCR Scan     		PDF 2SK2203 2SK2121.

    Untitled

    Abstract: No abstract text available
    Text: 2SK2205 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance Low drive current High speed switching 4 V gate drive device can be driven from 5 V source • Suitable for DC - DC converter, Motor control


    OCR Scan     		PDF 2SK2205 2SK220S 2SK2204.

    2SK221

    Abstract: 2SK220 H241 HITACHI 2SK* TO-3
    Text: 44TbBD5 001301Ö Ibb • HIT4 blE D 2SK220H, 2SK2 21H HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL M O S FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. • Enhancement-Mode.


    OCR Scan     		PDF 44TbBD5 2SK220Â 2SK221Â 2SK221 2SK220 H241 HITACHI 2SK* TO-3

    Untitled

    Abstract: No abstract text available
    Text: 2SK2202 Silicon N-Channel MOS FET HITACHI Application High speed power -switching Features • • • • • Low on-resistance H igh speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator. DC-DC converter


    OCR Scan     		PDF 2SK2202 ADE-208-089 O-220FM

    2sk2206

    Abstract: No abstract text available
    Text: 2SK2206 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • Low drive current • H igh speed sw itching • 4 V gate drive device can be driven from 5 V source • Suitable for D C -D C converter, M otor control


    OCR Scan     		PDF 2SK2206 O-220CFM 2SK2204. 2sk2206

    2SK2201

    Abstract: K2201
    Text: TOSHIBA 2SK2201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2201 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive


    OCR Scan     		PDF 2SK2201 K2201

    Untitled

    Abstract: No abstract text available
    Text: bl E D HMTbEOS 0013010 Ibb • H I T 4 2SK220H, 2SK2 21 H HI TA CH I/(OPTOELECTRONICS) SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High S p e e d S w itc h in g . • High C u to ff F r e q u e n c y .


    OCR Scan     		PDF 2SK220H, 2SK22O 2SK221

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2200 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 8.0 ± 0.2 APPLICATIONS


    OCR Scan     		PDF 2SK2200

    Untitled

    Abstract: No abstract text available
    Text: 2SK2206 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • Low drive current • High speed switching • 4 V gate drive device can be driven from 5 V source • Suitable for DC-DC converter, Motor control


    OCR Scan     		PDF 2SK2206 O-220CFM

    Untitled

    Abstract: No abstract text available
    Text: 2SK2202 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter


    OCR Scan     		PDF 2SK2202 O-220FM

    Untitled

    Abstract: No abstract text available
    Text: 2SK2205 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • Lo w drive current • High speed switching • 4 V gate drive device can be driven from 5 V source • Suitable for DC-DC converter. Motor control


    OCR Scan     		PDF 2SK2205 2SK2204.

    2SK2200

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2200 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		PDF 2SK2200 2SK2200