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    Littelfuse Inc 30KPA102-B

    TVS DIODE 102VWM 173.88VC P600
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    PA101B

    Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
    Text: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.


    Original     		PA101 PA102 PA103 PA104 P10944EJ2V0AN00 PA101B PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00 PDF

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    Abstract: No abstract text available
    Text: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)


    OCR Scan     		uPA102 PA102B: PA102G: 14-pin PA102 PDF