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    881-1 nec

    Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B
    Text: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S


    OCR Scan     		PDF b4S7414 G001S37 NE345 NE3451600 ofSiOz/SiNs72 S22-S21S12 NE345100 NE3451600 881-1 nec NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NES1417-10B NES1723-20B

    2SC1600

    Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
    Text: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is


    OCR Scan     		PDF b4S7414 NE57500 NE57510 NE57520 NE575 2SC1600 2SC1042 2SC1642 NE57520 321E S21E 2SC164

    1S1855

    Abstract: NEC 1s1855 1S1857 1S1856 ND1551-7F snap-off diode ND1571-5F diode 5f DIODE E 7F ND1561-5F
    Text: NE C/ 1SE D CALIFORNIA NEC b4S7414 0001*134 T 'O l - i £ ND1551-7F ND1561-5F ND1571-5F SILICON SNAP-OFF DIODE OUTLINE DIMENSIONS FEATURES Units in mm • U LTR A S H O R T R EV ER S E TU R N O N T IM E OUTLINE 5F • H IG H R E L IA B IL IT Y • LO W C O S T


    OCR Scan     		PDF b427414 ND1551-7F ND1561-5F ND1571-5F ND1551 ND1571-5F ND1551-7F, ND1561-5F, 1S1855 NEC 1s1855 1S1857 1S1856 snap-off diode diode 5f DIODE E 7F

    PD1712

    Abstract: NEC SIP 8pin JPB568G UPB568HA P8HA-254B
    Text: N E C / C A LIFO R N IA 30E D bMa7Mm 0002114 a h n e c c .- T W S - 1 9 - / 3 1 GHz DIVIDE-BY-128/136 LOW POWER PRESCALER The ¿¿PB568C, the /¿PB568HA and the jjPB568G UPB568, UPB568HA are tw o-m odulus prescaleres fo r T V , C A T V and V T R , w h ich


    OCR Scan     		PDF bM27Mm DIVIDE-BY-128/136 UPB568, UPB568HA iPB568C, PB568HA jjPB568G jjPD1700 /JPD1709, PD1711, PD1712 NEC SIP 8pin JPB568G UPB568HA P8HA-254B

    Microwave PIN diode

    Abstract: 1SV36 ND6000 8542A N0627 1SV37 ND6361-3F ND6371-5E d6471
    Text: N E C / 1SE D CALIFORNIA NEC H T-07-IS fc.427414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS qa - 25°o • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261, 71, 81, ND6361, 71 ND6461, 71


    OCR Scan     		PDF b4E7M14 ND6000 ND6261 ND6361, ND6461, ND6481, ND6651, ND6261, 71r81, Microwave PIN diode 1SV36 8542A N0627 1SV37 ND6361-3F ND6371-5E d6471

    NE21936

    Abstract: NE21935 equivalent 2SC2367 NE219 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174
    Text: NE C/ CALI FORNI A 1SE D NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES / • LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ' NE219 SERIES The NE219 series of NPN silicon bipolar transistors is de­ signed for small signal amplifier and oscillator applications up


    OCR Scan     		PDF QG013T3 r-31- NE219 NE21936 NE21935 equivalent 2SC2367 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174

    2SC1253

    Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
    Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for


    OCR Scan     		PDF MS7414 NE74000 NE74014 NE74020 NE740 E90115 NE74014 2SC12579 2SC1253 E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733

    1SS14

    Abstract: 1SS156 1SS12 ND4131-5T ND4141 CP 022 ND ND4000 nd4132 743e 1SS15
    Text: N E C / 15E D CALIFORNIA NEC • T -c rj~ ò 1 b45743i4 0001137 b SILICON SCHOTTKY MIXER/DETECTOR DIODE ND4000 SERIES ABSOLl TE MAXIMUM RATINGS FEATURES SYMBOLS • LOW MEDIUM BARRIERS Pt • PASSIVATED CONSTRUCTION • HIGH RELIABILITY Top Tj T sdr DESCRIPTION AND APPLICATIONS


    OCR Scan     		PDF fci427414 ND4000 ND41S1 ND4151 ND4132 1SS14 1SS156 1SS12 ND4131-5T ND4141 CP 022 ND 743e 1SS15

    2SC1594

    Abstract: NE77320 33B5 NE77300 NE77310 NE77320T S21E S22E J25-26 1400 88 pm
    Text: N E C / CALIFORNIA b42741M 1SE D 0 0 0 1 3 LjE 3 NE77300 NE77310 NE77320 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 2 WATTS POWER OUTPUT CLASS C AT 2 GHz The NE773 series of NPN medium power silicon transistors Is especially designed for broadband VHF and UHF amplifiers


    OCR Scan     		PDF b42741M 00013LjE NE77300 NE77310 NE77320 NE773 NE77310) stud-strlpline55 2SC1594 NE77320 33B5 NE77320T S21E S22E J25-26 1400 88 pm

    20PM4

    Abstract: NE985100 NE985200 NE985400
    Text: N E C / CALIFORNIA NEC 15E D b427414 DOOlSb? T NE985 SERIES K-BAND POWER G aAs MESFET OUTLINE DIMENSIONS FEATURES NE985100 CHIP • CLASS A OPERATION 40 • HIGH OUTPUT POWER • HIGH LINEAR GAIN • HIGH POWER ADDED EFFICIENCY • HIG H RELIABILITY NE985200 (CHIP)


    OCR Scan     		PDF h427414 00015b? NE985 NE985100 NE985100 NE985200 NE985400 NE985200 NE985400 20PM4

    NE1069L-4B

    Abstract: NE710
    Text: NEC/ CALIFORNIA t4S741M 1SE D NEC r-37'?0 00DlSb3 2 4W, L-S BAND POWER GaAs MESFET NE1069L-4B OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OPERATION OUTLINE T-38 • HIGH POWER OUTPUT • HIGH GAIN • HIGH POWER ADDED EFFICIENCY • HIGH RELIABILITY


    OCR Scan     		PDF 00DlSb3 NE1069L-4B NE1069L-4B b4S7414 00G15b4 NE710

    NE202 circuit

    Abstract: NE202 NE20200 NE20248 NE20283A NE202XX 1400 88 pm BH574
    Text: L NEC N E C / 1SE D CALIFORNIA • b427414 OQOISÌO T'3l -¿S' S ULTRA LOW NOISE K-BAND HETERO JUNCTION FET NE202 SERIES OUTLINE DIMENSIONS FEATURES • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4) 1.8 dB TYP at f = 18 GHz (NE20248)


    OCR Scan     		PDF b427414 NE202 NE202XX) NE202XX-1 NE20248) NE20283A) NE202 circuit NE20200 NE20248 NE20283A NE202XX 1400 88 pm BH574

    2sc2065

    Abstract: Low Distortion Amplifiers ne22 TRANSISTOR ne22 NE22100 NE22120 S21E NE221
    Text: N E C / 1SE D CALIFORNIA NEC • V b 4a ?414 O D D i a a ? 4 NPN MEDIUM POWER UHF-VHF TRANSISTOR NE22100 NE22120 ABSOLUTE MAXIMUM RATINGS FEATURES SYMBOLS • ULTR A-LINEAR B R O A D -B A N D A M P L IF IE R • LO W D IS T O R T IO N A T H IG H PO W E R PERFORMANCE SPECIFICATIONS


    OCR Scan     		PDF NE22100 NE22120 NE221 NE22120 100mA--- 2sc2065 Low Distortion Amplifiers ne22 TRANSISTOR ne22 S21E

    NE02136

    Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
    Text: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan     		PDF b427414 000137S NE021 3l-17 NE02136 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package

    NE76084

    Abstract: NE760 NE76000 NE76083A S221 y427
    Text: N E C / CALIFORNIA 1SE D NEC □4S7414 G D O l t m LOW NOISE Ku-K BAND G aAs MESFET 7 - r - 3 h 4 S NE760 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz The NE76000 provides a low noise figure and high associated


    OCR Scan     		PDF 4E7414 NE760 NE76000 NE76084 NE76083A S221 y427

    Microwave PIN diode

    Abstract: N0627 1sv85 8542A 1SV36 ND6361-3F ND6371-5E T07 marking 1SV26 MARKING 8542a
    Text: 'T - O l- lS N E C / 1SE CALIFORNIA NEC D H b457414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261,71, 81, ND6361, 71 ND6461, 71 ND6481, ND6651. 61


    OCR Scan     		PDF fa4274m ND6000 T-07-/S ND6261 ND6361, ND6461, ND6481, ND6651. ND6261, Microwave PIN diode N0627 1sv85 8542A 1SV36 ND6361-3F ND6371-5E T07 marking 1SV26 MARKING 8542a

    impatt diode

    Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
    Text: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz


    OCR Scan     		PDF b427414 ND487C1-3R ND487C2-00 ND487C2-3P ND487C2-3R ND487R1-00 ND487R1-3P ND487R1-3R ND487R2-00 ND487R2-3P impatt diode 1ST23 ND487 ND8L60W1T impatt 1ST11 ND8M30-1N

    NE32000

    Abstract: NE32084 NE32083A
    Text: E C/ C A L I F O R N I A NEC 1SE D b42?m4 OQOlbOS r - 3 / - 2 S' 3 NE32000 NE32083A NE32084 LOW COST/LOW NOISE K-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES NE32000 CHIP • LOW NOISE FIGURE 1.2 dB TYP at f = 12 GHz (NE32083A) 1.3 dB TYP at f = 12 GHz (NE32084)


    OCR Scan     		PDF NE32000 NE32083A NE32084 NE32083A) NE32084) NE320 NE32000 NE32084 NE32083A

    2SC1593

    Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
    Text: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is


    OCR Scan     		PDF b427414 NE64300 NE64310 NE64320 NE643 NE64300) NE64310) NE64320) 2SC1593 2SC1041 GE-64 NEC k 2134 transistor NE64320 V020 transistor BU 189

    PB552C

    Abstract: UPB552C uPB552 pb552
    Text: NEC/ 3GE CALIFORNIA 3> fcjM274m 0002072 T «NECC T -* /s r-/9 -IZ LOW VOLTAGE, LOW POWER TWO-MODULUS PRESCALER C UPB552C DESCRIPTIO N The {¿PB552C is a V H F two-modulus prescaler intended for use in P L L digital tuning systems. Advanced bipolar process technology is utilized to realize high frequency operation with extremely low power


    OCR Scan     		PDF bM274m Q0QSD75 UPB552C PB552C 34-8393/FAX UPB552C uPB552 pb552

    2SA1424

    Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912
    Text: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and


    OCR Scan     		PDF b427414 NE88900 NE88912 NE88933 NE88935 NE327 NE889 NE88900) NE88935 2SA1424 2SA1228 G503 NE327 NE AND micro-X 2SA1223

    8542A

    Abstract: ND6281-3A ND6281-3D E 3A diode nec x-band diode 3D
    Text: N E C / 1SE CALIFORNIA NEC D bM27Mm G O O nSB M ND6281-3A ND6281-3D X-BAND SILICON PIN DIODE FEATURES OUTLINE DIMENSIONS Units In mm OUTLINE 3A* • L O W D RIVING P O W E R • W ID E R F R E S IS T A N C E R A N G E 4.0 MIN.I. —— • LOW C O S T j?—


    OCR Scan     		PDF ND6281-3A ND6281-3D ND6281-3A, -j250 8542A ND6281-3D E 3A diode nec x-band diode 3D

    230Z

    Abstract: V3301 NEL230253 L230C NEL2300 NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111
    Text: NE C/ CALIFORNIA NEC 1SE D h 427 414 00 01 275 Ö T- 33-0? NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS çta = 2 5 °g RATINGS • HIGH GAIN: G mb = 6.5 dB


    OCR Scan     		PDF h427414 T-33-T- NEL2300 Emitterj17 bHS7414 V3301 -r-33 NEL230353 230Z V3301 NEL230253 L230C NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111