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    N CHANNEL IGBT Search Results

    N CHANNEL IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN450

    Abstract: AN4502 AN4503 AN4505 GP800FSS12
    Text: GP800FSS12 GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information Replaces October 1999 version, DS5239-2.0 DS5239-3.0 January 2000 The GP800FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar


    Original     		PDF GP800FSS12 DS5239-2 DS5239-3 GP800FSS12 AN450 AN4502 AN4503 AN4505

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ISL9V3040D3S Preliminary Insulated Gate Bipolar Transistor 300mJ, 400V, N-CHANNEL IGNITION IGBT  DESCRIPTION The UTC ISL9V3040D3S is an N-channel ignition Insulated Gate Bipolar Transistor. It uses UTC’s advanced technology to


    Original     		PDF ISL9V3040D3S 300mJ, ISL9V3040D3S ISL9V3040D3SL-TA3-T ISL9V3040D3SG-TA3-T ISL9V3040D3SL-TF3-T ISL9V3040D3SG-TF3-T ISL9V3040D3SL-TQ2-T ISL9V3040D3SG-TQ2-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ISL9V3040D3S Preliminary Insulated Gate Bipolar Transistor 300mJ, 400V, N-CHANNEL IGNITION IGBT  DESCRIPTION The UTC ISL9V3040D3S is an N-channel ignition Insulated Gate Bipolar Transistor. It uses UTC’s advanced technology to


    Original     		PDF ISL9V3040D3S 300mJ, ISL9V3040D3S ISL9V3040D3SL-TA3-T ISL9V3040D3SG-TA3-T O-220 ISL9V3040D3SL-TF3-T ISL9V3040D3SG-TF3-T O-220F

    Untitled

    Abstract: No abstract text available
    Text: GP1600FSS12-ABC GP1600FSS12-ABC Powerline N-Channel IGBT Module Advance Information DS5173-1.2 May 1999 The GP1200FSS12-ABC is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power


    Original     		PDF GP1600FSS12-ABC DS5173-1 GP1200FSS12-ABC

    Untitled

    Abstract: No abstract text available
    Text: GP1600FSS18-AAB GP1600FSS18-AAB Powerline N-Channel IGBT Module Advance Information DS5176-1.1 May 1999 The GP1600FSS18-AAB is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power


    Original     		PDF GP1600FSS18-AAB DS5176-1 GP1600FSS18-AAB

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP2400ESM12 S2400A MAX4800A
    Text: GP2400ESM12 GP2400ESM12 Powerline N-Channel Single Switch IGBT Module Preliminary Information DS5360-1.1 May 2000 The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the


    Original     		PDF GP2400ESM12 DS5360-1 GP2400ESM12 AN4502 AN4503 AN4505 AN4506 S2400A MAX4800A

    Untitled

    Abstract: No abstract text available
    Text: JULY 1996 ITC14415006D PRELIMINARY DATA DS4393-2.6 ITC14415006D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS 25˚C VCES 600V IC(CONT) 150A VCE(sat) 2.3V • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed.


    Original     		PDF ITC14415006D DS4393-2

    bipolar transistor td tr ts tf

    Abstract: No abstract text available
    Text: GP800DDS18-AAB GP800DDS18-AAB Powerline N-Channel IGBT Module Advance Information DS5165-1.0 May 1999 The GP800DDS18-AAB is a dual switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the


    Original     		PDF GP800DDS18-AAB DS5165-1 GP800DDS18-AAB bipolar transistor td tr ts tf

    Untitled

    Abstract: No abstract text available
    Text: JULY 1996 IT14410012D PRELIMINARY DATA DS4372-2.6 ITC14410012D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS 25˚C VCES 1200V IC(CONT) 100A VCE(sat) 2.8V • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed.


    Original     		PDF IT14410012D DS4372-2 ITC14410012D

    DS4751

    Abstract: ITS60C06
    Text: ITS60C06 ITS60C06 Medium Frequency Powerline N-Channel IGBT With Ultrafast Diode DS4751 - 2.0 May 1999 The ITS60C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    Original     		PDF ITS60C06 DS4751 ITS60C06

    AN4502

    Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
    Text: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the


    Original     		PDF GP401LSS18 DS5288-1 GP401LSS18 AN4502 AN4503 DSA0018823 ups sine wave inverter circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: JULY 1996 ITC14407516D PRELIMINARY DATA DS4580-1.4 ITC14407516D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS 25˚C VCES 1600V IC(CONT) 75A VCE(sat) 3.3V • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed.


    Original     		PDF ITC14407516D DS4580-1

    Untitled

    Abstract: No abstract text available
    Text: ITS40C06 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4740 - 2.1 The ITS40C06 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r


    OCR Scan     		PDF ITS40C06 DS4740 ITS40C06

    ITS25C12

    Abstract: No abstract text available
    Text: ITS25C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4741 - 2.1 The ITS25C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r


    OCR Scan     		PDF ITS25C12 DS4741 ITS25C12

    DS4752

    Abstract: No abstract text available
    Text: ITS08C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Novem ber 1997 version, DS4752 - 2.1 The ITS08C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r


    OCR Scan     		PDF ITS08C12 DS4752 ITS08C12

    T0-264

    Abstract: ITS35C12T
    Text: ITS35C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4754 - 2.1 The ITS35C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r


    OCR Scan     		PDF ITS35C12 DS4754 ITS35C12 T0-264 ITS35C12T

    Untitled

    Abstract: No abstract text available
    Text: ITS08C12 M ITEL S E M IC O N D U C T O R Powerline N-Channel IGBTW ith Ultrafast Diode Advance Information S upersedes N ovem ber 1997 version, DS4752 - 2.1 The ITS08C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF ITS08C12 DS4752 ITS08C12

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


    OCR Scan     		PDF MGP20N35CL -220A

    Untitled

    Abstract: No abstract text available
    Text: IT S 1 5 C 1 2 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4753 - 2.1 The ITS15C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r


    OCR Scan     		PDF DS4753 ITS15C12

    Untitled

    Abstract: No abstract text available
    Text: M ITEL S E M IC O N D U C T O R GP400LSS12S Powerline N-Channel IGBT Module Supersedes July 1998 version, DS4137 - 7.3 DS4137 - 7.4 Decem ber 1998 The G P 400LS S 12S is a single sw itch 1200 volt, robust n channel e n h a n ce m e n t m ode insulated gate b ip ola r


    OCR Scan     		PDF DS4137 GP400LSS12S 400LS

    ITE15F12

    Abstract: No abstract text available
    Text: 5Ü GEC PLESS EY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4315-1.2 ITE15F12/ITE15C12 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE15X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF DS4315-1 ITE15F12/ITE15C12 ITE15X12 Each11 002bi 37bfi522 ITE15F12

    pspice high frequency igbt

    Abstract: DS4926
    Text: MITEL ITS03F03 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes April 1998, version DS4926 - 1.1 DS4926 - 2.2 February 1999 Key Parameters The ITS03F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF DS4926 ITS03F03 ITS03F03 pspice high frequency igbt

    IGBT Pspice

    Abstract: sc 1091
    Text: MITEL ITS30F03 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes April 1998, version DS4925-1.2 DS4925-2.2 February 1999 Key Parameters The ITS30F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF DS4925-1 ITS30F03 DS4925-2 ITS30F03 IGBT Pspice sc 1091

    T 600 D

    Abstract: ITS40F06 ITS40F06P T0247 PSPICE Orcad ITS40
    Text: MITEL ITS40F06 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes February 1998, version DS4682-3.4 DS4682-4.2 March 1999 Key Parameters The ITS40F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF ITS40F06 DS4682-3 DS4682-4 ITS40F06 T0247 T 600 D ITS40F06P T0247 PSPICE Orcad ITS40