AN4506
Abstract: No abstract text available
Text: AN4506 Application Note TGD-1X AN4506 Calculation Of Junction Temperature Application Note Replaces September 2000 version, AN4506-4.0 There are a number of ways of calculating the junction temperature of a device. These involve various levels of complexity from a quick hand calculation to a full three
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AN4506
AN4506
AN4506-4
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thyristor 800A
Abstract: AN4506 TF944
Text: TF944.H TF944.H Fast Switching Thyristor Replaces March 1998 version, DS4281-3.2 DS4281-4.0 January 2000 APPLICATIONS KEY PARAMETERS VDRM 3500V IT RMS 1350A ITSM 13000A dV/dt 500V/µs dI/dt 500A/µs tq 120µs • High Power Inverters And Choppers ■ UPS
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TF944.
DS4281-3
DS4281-4
3000A
TF944
100mA
thyristor 800A
AN4506
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ultrasonic generator 40khz
Abstract: GATE ASSISTED TURN-OFF THYRISTORS ultrasonic generator 1200 w 40khz 40KHZ ULTRASONIC asymmetric thyristor asymmetric thyristor datasheet DF451 TA329 RC snubber diode TA32910Q
Text: TA329.Q TA329.Q Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000 KEY PARAMETERS VDRM 1400V IT RMS 370A ITSM 2000A dVdt 1000V/µs dI/dt 1000A/µs tq 7.0µs APPLICATIONS • High Frequency Applications
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TA329.
DS4680-2
DS4680-3
400Hz
40kHz
ultrasonic generator 40khz
GATE ASSISTED TURN-OFF THYRISTORS
ultrasonic generator 1200 w 40khz
40KHZ ULTRASONIC
asymmetric thyristor
asymmetric thyristor datasheet
DF451
TA329
RC snubber diode
TA32910Q
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RECTIFIER DIODE 1000A 2500V
Abstract: single phase half bridge controlled rectifier scr BUSBAR calculation datasheet 3 phase bridge fully controlled rectifier BUSBAR calculation INTERNATIONAL RECTIFIER scr MP02 jhs 60 multimeter PG 017
Text: MP02 XXX 190 Series MP02 XXX 190 Series Phase Control Dual SCR, SCR/Diode Modules Replaces December 1998 version, DS4479-3.0 DS4479-4.0 January 2000 FEATURES KEY PARAMETERS VDRM ITSM IT AV (per arm) Visol • Dual Device Module ■ Electrically Isolated Package
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DS4479-3
DS4479-4
MP02/190-14
MP02/190-12
MP02/190/10
RECTIFIER DIODE 1000A 2500V
single phase half bridge controlled rectifier scr
BUSBAR calculation datasheet
3 phase bridge fully controlled rectifier
BUSBAR calculation
INTERNATIONAL RECTIFIER scr
MP02
jhs 60
multimeter PG 017
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DCR1021SF60
Abstract: DCR1021SF61 DCR1021SF62 DCR1021SF63 DCR1021SF65 DCR0121SF64 DCR1021SF DS5436-1
Text: DCR1021SF DCR1021SF Phase Control Thyristor Target Information DS5436-1.0 March 2001 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Inductance Internal Construction KEY PARAMETERS VDRM max IT(AV) (max) ITSM dV/dt dI/dt 6500V 840A 14000A
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DCR1021SF
DS5436-1
4000A
DCR1021SF65
DCR0121SF64
DCR1021SF63
DCR1021SF62
DCR1021SF61
DCR1021SF60
DCR1021SF60
DCR1021SF61
DCR1021SF62
DCR1021SF63
DCR1021SF65
DCR0121SF64
DCR1021SF
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TGS 2600 series
Abstract: 300a 1500v thyristor 300a 1000v thyristor TGS 2600 AN4506 AN4839 DG306AE25
Text: DG306AE25 DG306AE25 Gate Turn-off Thyristor Replaces March 1998 version, DS4089 - 3.2 DS4099-4.0 January 2000 APPLICATIONS KEY PARAMETERS 600A ITCM VDRM 2500V 225A IT AV dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC)
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DG306AE25
DS4089
DS4099-4
TGS 2600 series
300a 1500v thyristor
300a 1000v thyristor
TGS 2600
AN4506
AN4839
DG306AE25
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GP800
Abstract: AN4508 AN4502 AN4503 AN4505 GP800DCS18 DS5221-4 dc chopper circuit application
Text: GP800DCS18 GP800DCS18 Chopper Switch IGBT Module Replaces November 2000 version, DS5221-4.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module
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GP800DCS18
DS5221-4
DS5221-5
GP800
AN4508
AN4502
AN4503
AN4505
GP800DCS18
dc chopper circuit application
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GP801DCM18
Abstract: AN4502 AN4503 AN4505 AN4506
Text: GP801DCM18 GP801DCM18 Hi-Reliability Chopper Switch Low VCE SAT IGBT Module DS5365-3.0 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Module ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
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GP801DCM18
DS5365-3
GP801DCM18
AN4502
AN4503
AN4505
AN4506
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Thyristor 865A
Abstract: AN4506 AN4839 AN4853 DF754 sine wave ups designing
Text: DF754 DF754 Fast Recovery Diode Replaces March 1998 version, DS4216-3.3 DS4216-4.0 January 2000 KEY PARAMETERS VRRM 3500V IF AV 865A IFSM 8000A Qr 1000µC trr 6.0µs APPLICATIONS • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding
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DF754
DS4216-3
DS4216-4
DF754
M779b.
Thyristor 865A
AN4506
AN4839
AN4853
sine wave ups designing
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A 7800A
Abstract: DSF20060SF DSF20060SF55 DSF20060SF56 DSF20060SF58 DSF20060SF60
Text: DSF20060SF DSF20060SF Fast Recovery Diode Replaces March 1997 version, DS4218-3.4 DS4219-4.0 January 2000 KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs APPLICATIONS • Inverters ■ Choppers ■ Inverse Parallel Diode ■ Freewheel Diode
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DSF20060SF
DS4218-3
DS4219-4
DSF20060SF60
DSF20060SF58
DSF20060SF56
DSF20060SF55
CB450.
A 7800A
DSF20060SF
DSF20060SF55
DSF20060SF56
DSF20060SF58
DSF20060SF60
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AN4506
Abstract: AN4853 DSDS4625-4 MF35 MF35-1200R
Text: MF35 MF35 Fast Recovery Diode Replaces March 1998 version, DS4625-3.1 DSDS4625-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 1200V IF AV 40A IFSM 400A Qr 10µC trr 0.2ns • Inverse, Parallel Or Series Connected Diode ■ Power Supplies ■ High Frequency Applications
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DS4625-3
DSDS4625-4
MF35-1200R.
AN4506
AN4853
MF35
MF35-1200R
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AN4502
Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
Text: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the
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GP401LSS18
DS5288-1
GP401LSS18
AN4502
AN4503
DSA0018823
ups sine wave inverter circuit diagram
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AN4506
Abstract: AN4839 AN4853 DF451 M771
Text: DF451 DF451 Fast Recovery Diode Replaces March 1999 version, DS4142-4.0 DS4143-5.0 January 2000 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge KEY PARAMETERS VRRM 1600V IF AV 295A IFSM 3500A Qr 25µC trr 1.22µs Applications
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DF451
DS4142-4
DS4143-5
DF451
AN4506
AN4839
AN4853
M771
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AN4502
Abstract: AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module
Text: GP2401ESM18 GP2401ESM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module Replaces February 2000 version, DS5345-1.0 FEATURES • Low VCE(SAT) ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5345-2.4 January 2001
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GP2401ESM18
DS5345-1
DS5345-2
AN4502
AN4503
AN4505
GP2401ESM18
3,3 kw high frequency transistor module
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AN4502
Abstract: AN4503 AN4505 AN4506 GP800DCM18
Text: GP800DCM18 GP800DCM18 Hi-Reliability Chopper Switch IGBT Module DS5363-3.0 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)
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GP800DCM18
DS5363-3
GP800DCM18
an1800V,
AN4502
AN4503
AN4505
AN4506
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DS4217-2
Abstract: ds4217 AN4506 DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60 DSF110
Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs APPLICATIONS • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling
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DSF11060SG
DS4217-2
DS4548
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
M779b.
ds4217
AN4506
DSF11060SG
DSF11060SG55
DSF11060SG56
DSF11060SG58
DSF11060SG60
DSF110
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AN4502
Abstract: AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190
Text: GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES • Internally Configured With Upper Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS
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GP200MLK12
GP200MKS12
DS5448-1
AN4502
AN4503
GP200MKS12
GP200MLS12
IGBT 200A 1200V application induction heating
DIODE 10V 10mA
AN5190
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DS1904
Abstract: DS1921G DS1922L DS1994 DS9092R DS9094-SM5 Data Logger Circuit Data Logger abstract DS1993 AN4506
Text: Maxim > App Notes > 1-Wire Devices Real-Time Clocks Keywords: DS1994L, alternatives, last time build, alternative devices Sep 10, 2009 APPLICATION NOTE 4506 Alternatives to the DS1994L 4Kb Plus Time Memory iButton® By: Bernhard Linke Abstract: The DS1994L was manufactured in a Maxim 6-inch wafer fabrication facility using a manufacturing
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DS1994L,
DS1994L
DS1993:
DS9092R:
DS9094-SM5:
com/an4506
AN4506,
DS1904
DS1921G
DS1922L
DS1994
DS9092R
DS9094-SM5
Data Logger Circuit
Data Logger abstract
DS1993
AN4506
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DG408BP45
Abstract: AN4506 AN4839 snubber 1250 MJ2250
Text: DG408BP45 DG408BP45 Gate Turn-off Thyristor Replaces March 1998 version, DS4091-2.3 DS4091-3.0 January 2000 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 4500V 320A IT AV dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC)
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DG408BP45
DS4091-2
DS4091-3
DG408BP45
AN4506
AN4839
snubber 1250
MJ2250
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GTO 100A 750V
Abstract: GTO 100A 500V AN4506 DGT304RE DGT304RE13 DS5518-2
Text: DGT304RE DGT304RE Reverse Blocking Gate Turn-off Thyristor DS5518-2.1 February 2002 FEATURES KEY PARAMETERS • Reverse Blocking Capability ITCM 700A ■ Double Side Cooling 1300V High Reliability In Service VDRM/VRRM ■ High Voltage Capability IT AV 250A
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DGT304RE
DS5518-2
GTO 100A 750V
GTO 100A 500V
AN4506
DGT304RE
DGT304RE13
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AN4506
Abstract: AN4839 DG858BW45 GTO thyristor 10A
Text: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V 1180A IT AV dVD/dt 1000V/µs 300A/µs diT/dt ● Double Side Cooling ● High Reliability In Service ●
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DG858BW45
DS4096-3
DS4096-4
AN4506
AN4839
DG858BW45
GTO thyristor 10A
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TGS 2600
Abstract: 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive
Text: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse
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DGT409BCA
DS4414-4
DGT409
TGS 2600
150a gto
TGS 2600 series
TGS 800
GTO thyristor 3000V 800A
GTO 6500V
AN4506
DGT409BCA
DGT409BCA6565
gto Gate Drive
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TF913
Abstract: DS4278-3 RC snubber diode MU169
Text: TF913.C TF913.C Fast Switching Thyristor Replaces March 1998 version, DS4278-2.2 DS4278-3.0 January 2000 APPLICATIONS KEY PARAMETERS VDRM 2000V IT RMS 1300A ITSM 17000A dV/dt 300V/µs dI/dt 500A/µs tq 50µs • High Power Inverters And Choppers ■ UPS
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TF913.
DS4278-2
DS4278-3
7000A
TF913
MU169.
RC snubber diode
MU169
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JIS Z 1522
Abstract: jis z 1522 CT
Text: M ITEL DCR1673SZ Phase Control Thyristor SEMICONDUCTOR Supersedes March 1998 version, DS4650 - 3.3 DS4650 - 4.0 April 199 Features • Double Side Cooling. • High Surge Capability. • High Mean Current. • Fatigue Free. Key Parameters 2800V DRM 3600A
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DS4650
DCR1673SZ
5000A
500mA,
DCR1673SZ28
DCR1673SZ27
DCR1673SZ26
DCR1673SZ25
DCR1673SZ24
JIS Z 1522
jis z 1522 CT
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