ITS25C12
Abstract: IGBT Transistor 1200V, 25A
Text: ITS25C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4741 - 2.1 The ITS25C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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ITS25C12
DS4741
ITS25C12
IGBT Transistor 1200V, 25A
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Untitled
Abstract: No abstract text available
Text: Si GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4741-2.1 ITS25C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS25C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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DS4741-2
ITS25C12
ITS25C12
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