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    plessey sp

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4740-2.1 ITS40C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS40C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4740-2 ITS40C06 ITS40C06 plessey sp

    ITS40C06

    Abstract: ITS40C06P T0247
    Text: ITS40C06 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4740 - 2.1 The ITS40C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF ITS40C06 DS4740 ITS40C06 ITS40C06P T0247

    Untitled

    Abstract: No abstract text available
    Text: ITS40C06 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4740 - 2.1 The ITS40C06 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r


    OCR Scan     		PDF ITS40C06 DS4740 ITS40C06