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Abstract: No abstract text available
Text: IT S 1 5 C 1 2 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4753 - 2.1 The ITS15C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r
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Untitled
Abstract: No abstract text available
Text: GEC P L ES SE Y S i SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4753-2.1 IT S 1 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS15C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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ITS15C12P
Abstract: T0247
Text: ITS15C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4753 - 2.1 The ITS15C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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ITS15C12
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Abstract: No abstract text available
Text: S i GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4752-2.1 ITS08C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS08C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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