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    AN4505 Search Results

    AN4505 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AN4505 Dynex Power Assemblies Original PDF

    AN4505 Datasheets Context Search

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    heat sink design guide, IGBT

    Abstract: air cooled heatsink AN4505 AN4505-5 heatsink EM HEATSINK PROFILE Dynex Semiconductor
    Text: AN4505 Heatsink Issues For IGBT Modules Application Note AN4505-5.2 April 2007 LN 25345 The maximum permissible junction temperature Tjmax of an IGBT is fixed and a suitable heatsink must be selected to keep the junction temperature (Tj) below this maximum.


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    PDF AN4505 AN4505-5 heat sink design guide, IGBT air cooled heatsink AN4505 heatsink EM HEATSINK PROFILE Dynex Semiconductor

    RHODORSIL

    Abstract: unial BICC BX13 AN4505 AN4505-5 RHODORSIL COMPOUND 5 oil bicc
    Text: AN4505 Application Note AN4505 Heatsink Issues For IGBT Modules Application Note Replaces March 2001 version, AN4505-5.0 AN4505-5.1 July 2002 The maximum permissible junction temperature Tjmax of an IGBT is fixed and a suitable heatsink must be selected to keep


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    PDF AN4505 AN4505 AN4505-5 RHODORSIL unial BICC BX13 RHODORSIL COMPOUND 5 oil bicc

    Tag 225-600

    Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


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    PDF DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes

    GP800

    Abstract: AN4508 AN4502 AN4503 AN4505 GP800DCS18 DS5221-4 dc chopper circuit application
    Text: GP800DCS18 GP800DCS18 Chopper Switch IGBT Module Replaces November 2000 version, DS5221-4.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module


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    PDF GP800DCS18 DS5221-4 DS5221-5 GP800 AN4508 AN4502 AN4503 AN4505 GP800DCS18 dc chopper circuit application

    GP801DCM18

    Abstract: AN4502 AN4503 AN4505 AN4506
    Text: GP801DCM18 GP801DCM18 Hi-Reliability Chopper Switch Low VCE SAT IGBT Module DS5365-3.0 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Module ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


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    PDF GP801DCM18 DS5365-3 GP801DCM18 AN4502 AN4503 AN4505 AN4506

    AN4502

    Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
    Text: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the


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    PDF GP401LSS18 DS5288-1 GP401LSS18 AN4502 AN4503 DSA0018823 ups sine wave inverter circuit diagram

    AN4502

    Abstract: AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module
    Text: GP2401ESM18 GP2401ESM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module Replaces February 2000 version, DS5345-1.0 FEATURES • Low VCE(SAT) ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5345-2.4 January 2001


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    PDF GP2401ESM18 DS5345-1 DS5345-2 AN4502 AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP800DCM18
    Text: GP800DCM18 GP800DCM18 Hi-Reliability Chopper Switch IGBT Module DS5363-3.0 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)


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    PDF GP800DCM18 DS5363-3 GP800DCM18 an1800V, AN4502 AN4503 AN4505 AN4506

    AN4502

    Abstract: AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190
    Text: GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES • Internally Configured With Upper Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS


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    PDF GP200MLK12 GP200MKS12 DS5448-1 AN4502 AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190

    kpb 307

    Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


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    PDF DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP2400ESM18
    Text: GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 2400A Per Module KEY PARAMETERS VCES typ VCE(sat)


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    PDF GP2400ESM18 DS5406-1 GP2400ESM18 AN4502 AN4503 AN4505 AN4506

    AN4502

    Abstract: DS5358-2 AN4503 AN4505 AN4506 GP800NSS33 an5167 440nF DS-5358
    Text: GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate with AL2O3 Substrate ■ Low Inductance Internal Construction DS5358-2.1 March 2001


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    PDF GP800NSS33 DS5358-2 GP800NSS33 AN4502 AN4503 AN4505 AN4506 an5167 440nF DS-5358

    DCR370T

    Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches


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    PDF 4500Vee DS5766-4. DCR370T DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34

    DCR2950W

    Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


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    PDF DS5766-4. DCR2950W K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A

    K1p TRANSISTOR

    Abstract: AN4502 AN4503 AN4505 GP1600FSM18
    Text: GP1600FSM18 GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 FEATURES • High Thermal Cycling Capability ■ 1600A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5361-2.3 January 2001


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    PDF GP1600FSM18 DS5361-1 DS5361-2 GP1600FSM18 K1p TRANSISTOR AN4502 AN4503 AN4505

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP400DDS18
    Text: GP400DDS18 GP400DDS18 Dual Switch IGBT Module Preliminary Information DS5359-2.0 January 2001 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS VCES typ VCE(sat) (max) IC (max) IC(PK)


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    PDF GP400DDS18 DS5359-2 GP400DDS18 AN4502 AN4503 AN4505 AN4506

    AN4505

    Abstract: GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram
    Text: GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


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    PDF GP800DDM18 DS5364-2 DS5364-3 3300y AN4505 GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram

    AN4502

    Abstract: AN4503 AN4505 GP800FSS18
    Text: GP800FSS18 GP800FSS18 Singles Switch IGBT Module Replaces January 2000 version, DS5261-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module


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    PDF GP800FSS18 DS5261-2 DS5261-3 AN4502 AN4503 AN4505 GP800FSS18

    BJT 2222

    Abstract: npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 driver circuit Si321x 2N2222 bjt IBJT W6 13A Diode PC40EF12 IRLL014N equivalent
    Text: AN45 DESIGN GUIDE Si3210/15/16 DC-DC CONVERTER FOR THE Introduction The ProSLIC from Silicon Laboratories integrates a complete analog telephone interface into one low-voltage CMOS device and offers extensive software programmability to meet many global telephony


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    PDF Si3210/15/16 Si321x BJT 2222 npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 driver circuit 2N2222 bjt IBJT W6 13A Diode PC40EF12 IRLL014N equivalent

    DS5402-1

    Abstract: AN4502 AN4503 AN4505 AN4506 GP800FSM18
    Text: GP800FSM18 GP800FSM18 Hi-Reliability Single Switch IGBT Module DS5402-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)


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    PDF GP800FSM18 DS5402-1 GP800FSM18 AN4502 AN4503 AN4505 AN4506

    AN4502

    Abstract: AN4503 AN4505 GP1601FSS18 DS5248-4
    Text: GP1601FSS18 GP1601FSS18 Single Switch Low VCE SAT IGBT Module Replaces January 2000 version, DS5248-3.0 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1600A Per module DS5248-4.2 January 2001


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    PDF GP1601FSS18 DS5248-3 DS5248-4 AN4502 AN4503 AN4505 GP1601FSS18

    AN5190

    Abstract: AN4502 GP200MHB12S GP200MHS12 AN4503 AN4508
    Text: GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction DS5296-1.5 November 2000 KEY PARAMETERS VCES typ


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    PDF GP200MHS12 GP200MHB12S DS4339-5 DS5296-1 GP200MHS12 AN5190 AN4502 AN4503 AN4508

    DS5401-1

    Abstract: basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 GP801FSM18 DS5401
    Text: GP801FSM18 GP801FSM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module DS5401-1.1 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


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    PDF GP801FSM18 DS5401-1 GP801FSM18 basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 DS5401

    BX13

    Abstract: copper bus bar torque RHODORSIL COMPOUND 5 busbar bolt torque value oil bicc RHODORSIL COMPOUND 7
    Text: device clam ping and m odule m ounting D isc D evice C la m p in g R e c o m m e n d a tio n s The Forward Voltage Drop and Thermal Resistance of a disc hockey puck semiconductor is affected by the clamping force that is applied to the device. This is because, unlike stud type


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    PDF 130x140mm 190x140mm AN4505. BX13 copper bus bar torque RHODORSIL COMPOUND 5 busbar bolt torque value oil bicc RHODORSIL COMPOUND 7