Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET HTRB Search Results

    MOSFET HTRB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET HTRB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Mosfet

    Abstract: SSF3036C
    Text: SSF3036C 30V Complementary MOSFET Main Product Characteristics NMOS PMOS VDSS 30V -30V RDS on 32.4mohm 61.6mohm ID 4A -3.6A N-Channel Mosfet P-Channel Mosfet Schematic Diagram DFN 3x2-8L Bottom View Features and Benefits   Advanced Process Technology


    Original     		PDF SSF3036C 3036C 3000pcs 10pcs 30000pcs 120000pcs Mosfet SSF3036C

    HTRB

    Abstract: mosfet reliability testing report HTGB JEDEC htrb On semiconductor power MOSFET reliability report reliability testing report power MOSFET reliability report "power MOSFET" reliability report mosfet HTRB MOSFET reliability report
    Text: AOS Semiconductor Reliability Report AO3160, 600V 0.04A N-Channel MOSFET Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 This report applies for 600V 0.04A N-Channel MOSFET AO3160 The AO3160 is fabricated using an advanced high voltage MOSFET process that is designed to


    Original     		PDF AO3160, AO3160 AO3160 HTRB mosfet reliability testing report HTGB JEDEC htrb On semiconductor power MOSFET reliability report reliability testing report power MOSFET reliability report "power MOSFET" reliability report mosfet HTRB MOSFET reliability report

    1E14

    Abstract: 2E12 3E12 FRL430R4 JANSR2N7281 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7281 Formerly FRL430R4 [ /Title JANS R2N72 81 /Subject (Radiation Hardened, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Radiation Hardened, NChannel Power MOSFET) /Creator () Data Sheet Radiation Hardened, N-Channel


    Original     		PDF JANSR2N7281 FRL430R4 R2N72 1000K 1E14 2E12 3E12 FRL430R4 JANSR2N7281 Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 3E12 FRF450R4 JANSR2N7298
    Text: JANSR2N7298 Formerly FRF450R4 Data Sheet [ /Title JANS R2N72 98 /Subject (Radiation Hardened, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Radiation Hardened, NChannel Power MOSFET) /Creator () Radiation Hardened, N-Channel Power


    Original     		PDF JANSR2N7298 FRF450R4 R2N72 1000K 1E14 2E12 3E12 FRF450R4 JANSR2N7298

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSS234R4 JANSR2N7401
    Text: JANSR2N7401 August 1998 Formerly FSS234R4 [ /Title JANS R2N74 01 /Subject (6A, 250V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Rad Hard, NChannel Power MOSFET) /Creator () 6A, 250V, 0.600 Ohm, Rad Hard,


    Original     		PDF JANSR2N7401 FSS234R4 R2N74 Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS234R4 JANSR2N7401

    1E14

    Abstract: 2E12 FRF150R4 JANSR2N7292 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 92 /Subject (25A, 100V, 0.070 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 25A, 100V,


    Original     		PDF JANSR2N7292 FRF150R4 R2N72 1000K 1E14 2E12 FRF150R4 JANSR2N7292 Rad Hard in Fairchild for MOSFET

    Rad Hard in Fairchild for MOSFET

    Abstract: 2E12 FSL110R4 JANSR2N7410
    Text: JANSR2N7410 Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET March 1998 [ /Title JANS R2N74 10 /Subject (3.5A, 100V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3.5A, 100V,


    Original     		PDF JANSR2N7410 FSL110R4 R2N74 Rad Hard in Fairchild for MOSFET 2E12 FSL110R4 JANSR2N7410

    2E12

    Abstract: FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 11 /Subject (2.5A, -100V, 1.30 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 2.5A, 100V,


    Original     		PDF JANSR2N7411 FSL9110R4 -100V, R2N74 2E12 FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET

    FSF9250R4

    Abstract: 1E14 2E12 JANSR2N7404 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 04 /Subject (15A, 200V, 0.290 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 15A, 200V,


    Original     		PDF JANSR2N7404 FSF9250R4 -200V, R2N74 FSF9250R4 1E14 2E12 JANSR2N7404 Rad Hard in Fairchild for MOSFET

    FSF9150R4

    Abstract: p-chan 10a 2E12 JANSR2N7403 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 03 /Subject (22A, 100V, 0.140 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 22A, 100V,


    Original     		PDF JANSR2N7403 FSF9150R4 -100V, R2N74 FSF9150R4 p-chan 10a 2E12 JANSR2N7403 Rad Hard in Fairchild for MOSFET

    Rad Hard in Fairchild for MOSFET

    Abstract: mosfet 250V 4A 1E14 2E12 FRL234R4 JANSR2N7278 MOSFET A3
    Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 78 /Subject (4A, 250V, 0.700 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.700


    Original     		PDF JANSR2N7278 FRL234R4 R2N72 1000K 100opment. Rad Hard in Fairchild for MOSFET mosfet 250V 4A 1E14 2E12 FRL234R4 JANSR2N7278 MOSFET A3

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSS230R4 JANSR2N7400 igss
    Text: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 00 /Subject (8A, 200V, 0.440 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 200V, 0.440


    Original     		PDF JANSR2N7400 FSS230R4 R2N74 Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS230R4 JANSR2N7400 igss

    MOSFET MARK H1

    Abstract: 2E12 FSS130R4 JANSR2N7399 T0-257AA Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 99 /Subject (11A, 100V, 0.210 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines


    Original     		PDF JANSR2N7399 FSS130R4 R2N73 MOSFET MARK H1 2E12 FSS130R4 JANSR2N7399 T0-257AA Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FSL130R4 JANSR2N7395 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 95 /Subject (8A, 100V, 0.230 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 100V, 0.230


    Original     		PDF JANSR2N7395 FSL130R4 R2N73 2E12 FSL130R4 JANSR2N7395 Rad Hard in Fairchild for MOSFET

    FSS430

    Abstract: 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112
    Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 02 /Subject (3A, 500V, 2.70 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3A, 500V, 2.70


    Original     		PDF JANSR2N7402 FSS430R4 R2N74 FSS430 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112

    1E14

    Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460


    Original     		PDF JANSR2N7396 FSL230R4 R2N73 1E14 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR

    Mosfet

    Abstract: SSF1109
    Text: SSF1109 110V Channel MOSFET Main Product Characteristics VDSS 110V RDS on 6.7mohm(typ.) ID 130A TO220 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF1109 Mosfet SSF1109

    Mosfet

    Abstract: SSF2N60F mosfet 600V 100A
    Text: SSF2N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2N60F O220F p600V Mosfet SSF2N60F mosfet 600V 100A

    Mosfet

    Abstract: SSPL2090
    Text: SSPL2090 200V N-Channel MOSFET Main Product Characteristics VDSS 200V RDS on 80mΩ(typ.) ID 30A TO-220 Schematic Diagram Marking and Pin Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSPL2090 O-220 Mosfet SSPL2090

    Mosfet

    Abstract: SSF1504D
    Text: SSF1504D 150V N-Channel MOSFET Main Product Characteristics VDSS 150V RDS on 0.3Ω(typ) ID 6A DPAK Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF1504D fo150V Mosfet SSF1504D

    Mosfet

    Abstract: 2N7002KU
    Text: 2N7002KU 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS on 3Ω(max.) ID 0.3A SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF 2N7002KU OT-23 Mosfet 2N7002KU

    Mosfet

    Abstract: SSF2N60D1
    Text: SSF2N60D1 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.9Ω (typ.) ID 2A TO-252 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2N60D1 O-252 O-252ï Mosfet SSF2N60D1

    Mosfet

    Abstract: SSF1010
    Text: SSF1010 100V N-Channel MOSFET Main Product Characteristics VDSS 100V RDS on 9.5mohm(typ.) ID 100A TO-220 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF1010 O-220 Mosfet SSF1010

    Mosfet

    Abstract: No abstract text available
    Text: SSF7505 75V N-Channel MOSFET Main Product Characteristics VDSS 75V RDS on 3.3mohm(typ.) ID 170A TO-220 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF7505 O-220 Mosfet