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    FSF9250R4 Search Results

    FSF9250R4 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FSF9250R4 Fairchild Semiconductor 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFET Original PDF
    FSF9250R4 Intersil 15A, -200V, 0.290 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSF9250R4 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    FSF9250R4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E14

    Abstract: 2E12 FSF9250R4 JANSR2N7404
    Text: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7404 FSF9250R4 -200V, 1E14 2E12 FSF9250R4 JANSR2N7404

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7404 FSF9250R4 -200V,

    FSF9250R4

    Abstract: 1E14 2E12 JANSR2N7404 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 04 /Subject (15A, 200V, 0.290 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 15A, 200V,


    Original     		PDF JANSR2N7404 FSF9250R4 -200V, R2N74 FSF9250R4 1E14 2E12 JANSR2N7404 Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FSF9250D FSF9250D1 FSF9250D3 FSF9250R FSF9250R1
    Text: FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSF9250D, FSF9250R -200V, 1E14 2E12 FSF9250D FSF9250D1 FSF9250D3 FSF9250R FSF9250R1

    FSF9250R4

    Abstract: 1E14 2E12 FSF9250D FSF9250D1 FSF9250D3 FSF9250R FSF9250R1 Rad Hard in Fairchild for MOSFET
    Text: FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSF9250D, FSF9250R -200V, FSF9250R4 1E14 2E12 FSF9250D FSF9250D1 FSF9250D3 FSF9250R FSF9250R1 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSF9250D, FSF9250R -200V,

    Untitled

    Abstract: No abstract text available
    Text: 2 m JANSR2N7404 a r ia s Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June1998 Features Description • 15A,-200V, rDS ON) = 0.290Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs


    OCR Scan     		PDF JANSR2N7404 -200V, MIL-STD-750, MIL-S-19500, -160V, 100ms; 500ms;

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7404 33 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 15A, -200V, ros ON = 0-290Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSF9250R4 -200V, 0-290Q JANSR2N7404 1-800-4-HARRIS

    lsd 3222 -20

    Abstract: No abstract text available
    Text: FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 15A, -200V, rDS 0 N = 0.290£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSF9250D, FSF9250R -200V, -254AA MIL-S-19500 lsd 3222 -20

    7404

    Abstract: No abstract text available
    Text: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F


    OCR Scan     		PDF JANSR2N7272 JANSR2N7275 FRL130R4 FRL230R4 FRL234R4 FRF150R FRF250R4 FSL130R4 FSL230R4 FSL234R4 7404

    Untitled

    Abstract: No abstract text available
    Text: FSF9250D, FSF9250R HARRIS S E M I C O N D U C T O R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs J u n e 1998 Features Description • 15A, -200V, rDS ON = 0.290£J T h e D iscre te P ro d u c ts O p e ra tio n o f H arris S e m ic o n d u c to r


    OCR Scan     		PDF FSF9250D, FSF9250R -200V, MIL-STD-750, MIL-S-19500, -160V, 100ms; 500ms;