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    Intersil Corporation JANSR2N7410

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    Quest Components JANSR2N7410 1
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    JANSR2N7410 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    JANSR2N7410 Fairchild Semiconductor 3.5A, 100V, 0.600 ?, Rad Hard, N-Channel Power MOSFET Original PDF
    JANSR2N7410 Intersil 3.5A, 100V, 0.600 ?, Rad Hard, N-Channel Power MOSFET Original PDF

    JANSR2N7410 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7410 S E M I C O N D U C T O R Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET March 1998 Features Description • 3.5A, 100V, rDS ON = 0.600Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7410 1-800-4-HARRIS

    Rad Hard in Fairchild for MOSFET

    Abstract: 2E12 FSL110R4 JANSR2N7410
    Text: JANSR2N7410 Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET March 1998 [ /Title JANS R2N74 10 /Subject (3.5A, 100V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3.5A, 100V,


    Original     		PDF JANSR2N7410 FSL110R4 R2N74 Rad Hard in Fairchild for MOSFET 2E12 FSL110R4 JANSR2N7410

    2E12

    Abstract: FSL110R4 JANSR2N7410
    Text: JANSR2N7410 Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET March 1998 Features Description • 3.5A, 100V, rDS ON = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7410 FSL110R4 2E12 FSL110R4 JANSR2N7410

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7410 Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 3.5A, 100V, rDS ON = 0.600Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7410 FSL110R4

    Untitled

    Abstract: No abstract text available
    Text: CD h JANSR2N7410 a r r is Formerly FSL110R4 March1998 3.5A, 1 0 0 V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 3.5A, 100V, rDS ON = 0.600U The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF JANSR2N7410 MIL-STD-750, MIL-S-19500, 500ms;

    Untitled

    Abstract: No abstract text available
    Text: 'f ^BSS JANSR2N7410 Form erly FSL110R4 March1998 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 3.5A, 100V, r[js ON = 0.600£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s


    OCR Scan     		PDF FSL110R4 JANSR2N7410 O-205AF 254mm)

    500V 25A Mosfet

    Abstract: Power MOSFET Selection Guide MOSFET 500V 15A n-channel 250V power mosfet 500v 2A mosfet p-channel 250V power mosfet 200v 5A mosfet rad hard Power Mosfet P-channel mosfet 500V
    Text: RAD HARD MOSFET& JANS RAD HARD MOSFETs PAGE JANS Rad Hard Power MOSFET Selection Guide. 2-2 Rad Hard Data Packages - Harris Power Transistors.


    OCR Scan     		PDF JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7292 JANSR2N7294 JANSR2N7395 JANSR2N7396 JANSR2N7397 JANSR2N7398 JANSR2N7399 500V 25A Mosfet Power MOSFET Selection Guide MOSFET 500V 15A n-channel 250V power mosfet 500v 2A mosfet p-channel 250V power mosfet 200v 5A mosfet rad hard Power Mosfet P-channel mosfet 500V