2E12
Abstract: 3E12 FSS430R4 JANSR2N7402 relay 12v 300 ohm FSS430
Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7402
FSS430R4
2E12
3E12
FSS430R4
JANSR2N7402
relay 12v 300 ohm
FSS430
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Untitled
Abstract: No abstract text available
Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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JANSR2N7402
FSS430R4
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FSS430
Abstract: 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112
Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 02 /Subject (3A, 500V, 2.70 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3A, 500V, 2.70
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JANSR2N7402
FSS430R4
R2N74
FSS430
2E12
3E12
FSS430R4
JANSR2N7402
Rad Hard in Fairchild for MOSFET
J-112
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Untitled
Abstract: No abstract text available
Text: JANSR2N7402 S E M I C O N D U C T O R August 1997 Formerly Available As FSS430R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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JANSR2N7402
1-800-4-HARRIS
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2E12
Abstract: 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
Text: FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSS430D,
FSS430R
2E12
3E12
FSS430D
FSS430D1
FSS430D3
FSS430R
FSS430R1
FSS430R3
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2E12
Abstract: 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
Text: FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSS430D,
FSS430R
2E12
3E12
FSS430D
FSS430D1
FSS430D3
FSS430R
FSS430R1
FSS430R3
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NI-26
Abstract: Rad Hard in Fairchild for MOSFET 2E12 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
Text: FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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FSS430D,
FSS430R
NI-26
Rad Hard in Fairchild for MOSFET
2E12
3E12
FSS430D
FSS430D1
FSS430D3
FSS430R
FSS430R1
FSS430R3
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Untitled
Abstract: No abstract text available
Text: JANSR2N7402 HARRIS S E M I C O N D U C T O R August 1997 Formerly Available As FSS430R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 3A, 500V, ros ON = 2.70£2 The Discrete Products Operation of Harris Semiconductor
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JANSR2N7402
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: JANSR2N7402 33 M ÄRE» Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Features Description • 3A, 500V, rDS 0N = 2.70Q T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r ha s d e v e lo p e d a s e rie s o f R a d ia tio n H a rd e n e d M O S F E T s
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FSS430R4
e1998
JANSR2N7402
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: H A R R IS X FSS430D, FSS430R S em iconductor 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 3A, 500V, ros ON = 2.70£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSS430D,
FSS430R
O-257AA
MIL-S-19500
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7404
Abstract: No abstract text available
Text: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F
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JANSR2N7272
JANSR2N7275
FRL130R4
FRL230R4
FRL234R4
FRF150R
FRF250R4
FSL130R4
FSL230R4
FSL234R4
7404
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Untitled
Abstract: No abstract text available
Text: W A R D 'S FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 3A, 500V, Fd S ON = 2.70S1 The Discrete Products O peration of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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PDF
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FSS430D,
FSS430R
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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