Untitled
Abstract: No abstract text available
Text: JANSR2N7410 S E M I C O N D U C T O R Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET March 1998 Features Description • 3.5A, 100V, rDS ON = 0.600Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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JANSR2N7410
1-800-4-HARRIS
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Rad Hard in Fairchild for MOSFET
Abstract: 2E12 FSL110R4 JANSR2N7410
Text: JANSR2N7410 Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET March 1998 [ /Title JANS R2N74 10 /Subject (3.5A, 100V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3.5A, 100V,
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JANSR2N7410
FSL110R4
R2N74
Rad Hard in Fairchild for MOSFET
2E12
FSL110R4
JANSR2N7410
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2E12
Abstract: FSL110R4 JANSR2N7410
Text: JANSR2N7410 Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET March 1998 Features Description • 3.5A, 100V, rDS ON = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7410
FSL110R4
2E12
FSL110R4
JANSR2N7410
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Untitled
Abstract: No abstract text available
Text: JANSR2N7410 Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 3.5A, 100V, rDS ON = 0.600Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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JANSR2N7410
FSL110R4
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FSL110D1
Abstract: 2E12 FSL110D FSL110D3 FSL110R FSL110R1 FSL110R3
Text: FSL110D, FSL110R Data Sheet October 1998 File Number 4224.3 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSL110D,
FSL110R
FSL110D1
2E12
FSL110D
FSL110D3
FSL110R
FSL110R1
FSL110R3
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2E12
Abstract: FSL110D FSL110D1 FSL110D3 FSL110R FSL110R1 FSL110R3
Text: FSL110D, FSL110R Data Sheet October 1998 File Number 4224.3 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSL110D,
FSL110R
2E12
FSL110D
FSL110D1
FSL110D3
FSL110R
FSL110R1
FSL110R3
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integrated circuits equivalents list
Abstract: No abstract text available
Text: FSL110D, FSL110R Data Sheet 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSL110D,
FSL110R
integrated circuits equivalents list
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Untitled
Abstract: No abstract text available
Text: CD h JANSR2N7410 a r r is Formerly FSL110R4 March1998 3.5A, 1 0 0 V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 3.5A, 100V, rDS ON = 0.600U The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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JANSR2N7410
MIL-STD-750,
MIL-S-19500,
500ms;
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Untitled
Abstract: No abstract text available
Text: 'f ^BSS JANSR2N7410 Form erly FSL110R4 March1998 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 3.5A, 100V, r[js ON = 0.600£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s
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FSL110R4
JANSR2N7410
O-205AF
254mm)
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Untitled
Abstract: No abstract text available
Text: a a h a r r i s S E M I C O N D U C T O R FSL110D, FSL110R W " M M W • ■ 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 3.5A, 100V, rQs oN “ 0.600Q The Discrete Products Operation of Harris Semiconductor
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FSL110D,
FSL110R
36MeV/mgfcm2
MIL-STD-750,
MIL-S-19500,
500ms;
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traveler
Abstract: No abstract text available
Text: FSL110D, FSL110R Semiconductor Data Sheet 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s October 1998
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FSL110D,
FSL110R
1-800-4-HARR
traveler
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7404
Abstract: No abstract text available
Text: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F
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JANSR2N7272
JANSR2N7275
FRL130R4
FRL230R4
FRL234R4
FRF150R
FRF250R4
FSL130R4
FSL230R4
FSL234R4
7404
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