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    3E12 Search Results

    3E12 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    TPS3103E12DBVRG4 Texas Instruments UltraLow Supply Current, Voltage Supervisory Circuits 6-SOT-23 -40 to 85 Visit Texas Instruments Buy
    TPS3103E12DBVT Texas Instruments UltraLow Supply Current, Voltage Supervisory Circuits 6-SOT-23 -40 to 85 Visit Texas Instruments Buy
    TPS3103E12DBVR Texas Instruments UltraLow Supply Current, Voltage Supervisory Circuits 6-SOT-23 -40 to 85 Visit Texas Instruments Buy
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    3E12 Price and Stock

    Aker Technology Company Ltd C3E-12.000-8-1520-R

    CRYSTAL 12.0000MHZ 8PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C3E-12.000-8-1520-R Reel 5,000 1,000
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    • 1000 $0.23432
    • 10000 $0.20503
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    C3E-12.000-8-1520-R Digi-Reel 5,000 1
    • 1 $0.43
    • 10 $0.374
    • 100 $0.322
    • 1000 $0.29034
    • 10000 $0.29034
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    C3E-12.000-8-1520-R Cut Tape 5,000 1
    • 1 $0.43
    • 10 $0.374
    • 100 $0.322
    • 1000 $0.29034
    • 10000 $0.29034
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    Micron Technology Inc MT53E128M32D2DS-053-AIT:A

    IC DRAM 4GBIT 1.866GHZ 200WFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT53E128M32D2DS-053-AIT:A Tray 2,971 1
    • 1 $10.77
    • 10 $9.556
    • 100 $8.5775
    • 1000 $7.84911
    • 10000 $7.84911
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    Micron Technology Inc MT53E128M32D2DS-053-WT:A

    IC DRAM 4GBIT 1.866GHZ 200WFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT53E128M32D2DS-053-WT:A Tray 2,377 1
    • 1 $9.2
    • 10 $8.163
    • 100 $7.328
    • 1000 $6.70589
    • 10000 $6.32242
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    Aker Technology Company Ltd C3E-12.000-18-3030-X-R

    CRYSTAL 12.0000MHZ 18PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C3E-12.000-18-3030-X-R Cut Tape 1,713 1
    • 1 $0.41
    • 10 $0.353
    • 100 $0.307
    • 1000 $0.27828
    • 10000 $0.27828
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    C3E-12.000-18-3030-X-R Digi-Reel 1,713 1
    • 1 $0.41
    • 10 $0.353
    • 100 $0.307
    • 1000 $0.27828
    • 10000 $0.27828
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    Ferroxcube International Holding BV TX13-7.1-4.8-3E12

    FERRITE CORE TOROID
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TX13-7.1-4.8-3E12 Bulk 673 1
    • 1 $1.32
    • 10 $0.913
    • 100 $0.6133
    • 1000 $0.44728
    • 10000 $0.432
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    3E12 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3E12 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    3E12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 3U CompactPCI Peripheral Cards / PMC Modules cPCI-3E10/3E12 cPCI-3544 3U CompactPCI 2/4-Port Gigabit Ethernet Card 4-Port RS-422/485 Isolated Serial Communications Card ® 3U cPCI Blades PICMG 2.0 R3.0 compliant Supports 32bit/33MHz, 66bit/64MHz CompactPCI® bus


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    cPCI-3E10/3E12 cPCI-3544 RS-422/485 32bit/33MHz, 66bit/64MHz 100mmx160mm RJ-45 10/100/1000BASE-T 82574L cPCI-3E10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3E10 3E10: 3E12 3E12: A high permeability material optimized for use in wideband transformers as well as EMI-suppression filters The best The highest process impedance control with and extended permeability bandwidth 3E10 achieves the tightest tolerance in your final product only 20% , so


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BA-3E12UW Package Dimensions : Features : 1. Emitting area : 18.78x5.85 mm 2. Low power requirement. 3. Excellent characters appearance. 4. Solid state reliability. 5. Categorized for luminous intensity. 19.80 .780


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    BA-3E12UW BA-3E12UW PDF

    BA-3E12UW

    Abstract: No abstract text available
    Text: BRIGHT LED ELECTRONICS CORP. BA-3E12UW SINCE 1981 ● Features : 1. Emitting area : 18.78x5.85(mm) 2. Low power requirement. 3. Excellent characters appearance. 4. Solid state reliability. 5. Categorized for luminous intensity. ● Package Dimensions :


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    BA-3E12UW BA-3E12UW PDF

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 & Q2 Parameters Q1 & Q2 IS BF 7e-16 MJC 0.34 109 XCJC NF 1 CJS VAF 15 VJS 0.75 IKF 0.19 MJS ISE 7.9e-13 FC 0.5 3e-12 NE 2.19 TF BR 1 XTF 5.2 NR 1.08 VTF 4.58 0.01 VAR 12.4 ITF IKR Infinity PTF


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    UPA826TC 7e-16 9e-13 4e-12 18e-12 3e-12 PDF

    ARM926T

    Abstract: ic str 6454 s11 stopping compound motorola 7824 BT OSC26M CNC DRIVES ptc temperature sensor 400c 4*4 matrix keypad 17521 rca SAMSUNG NAND FLASH K9F5608
    Text: i.MX21 Applications Processor Reference Manual Document Number: MC9328MX21RM Rev. 3 04/2007 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370


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    MC9328MX21RM CH370 ARM926T ic str 6454 s11 stopping compound motorola 7824 BT OSC26M CNC DRIVES ptc temperature sensor 400c 4*4 matrix keypad 17521 rca SAMSUNG NAND FLASH K9F5608 PDF

    ad8561 precautions

    Abstract: AD8561 AD8598 AD8598AN AD8598AR AD8598ARU AD9698 MAX912 N-16
    Text: a Dual 7 ns Single Supply Comparator AD8598 FEATURES 7 ns Propagation Delay Single Supply Operation: +3 V to +10 V Low Power Symmetrical Layout Latch Function TSSOP Packages PIN CONFIGURATIONS N-16, RU-16 and R-16A OBS APPLICATIONS Clock Recovery and Clock Distribution


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    AD8598 RU-16 R-16A MAX912 16-Lead R-16A) ad8561 precautions AD8561 AD8598 AD8598AN AD8598AR AD8598ARU AD9698 MAX912 N-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE722S01 CGD_PKG SCHEMATIC 0.001pF Ldx DRAIN Q1 Lgx GATE Rgx 1 ohms 0.5nH Rdx 1 ohms 0.71nH Lsx 0.13nH CGS_PKG 0.08pF CDS_PKG 0.1PF Rsx 0.01 ohms SOURCE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters Q1 VTO -2.24 RG 8 VTOSC RD ALPHA


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    NE722S01 001pF 2e-10 1e-14 3e-12 19e-12 92e-12 05e-12 150e-6 second2/2002 PDF

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 & Q2 Parameters Q1 & Q2 IS 7e-16 MJC 0.34 BF 109 XCJC NF 1 CJS 0.75 VAF 15 VJS IKF 0.19 MJS ISE 7.9e-13 FC 0.5 3e-12 NE 2.19 TF BR 1 XTF 5.2 NR 1.08 VTF 4.58 VAR 12.4 ITF 0.01 IKR Infinity PTF


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    UPA806T 7e-16 9e-13 4e-12 18e-12 3e-12 24-Hour PDF

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


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    30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 PDF

    E137938

    Abstract: 3E50 1E35 1E125UM
    Text: Standard Pack: 12 Weight: 0.3A - 32A 1.8kg 3.97 lb. 40A - 63A 1.98kg (4.37 lb.) Two Pole Standard Pack: 6 Weight: 0.3A - 32A 1.8kg (3.97 lb.) 40A - 63A 1.98kg (4.37 lb.) Rated Current 0.3A 0.5A 0.75A 0.8A 1.0A 1.6A 2.0A 2.5A 3.0A 3.5A 4.0A 5.0A 6.0A 8.0A


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    E137938 UL508 1E03UM 1E05UM 1E075UM 1E10UM 1E12UM 1E125UM 1E13UM 1E15UM E137938 3E50 1E35 PDF

    INA115E

    Abstract: 115E 20E6 INA115
    Text: * INA115E = 2 x A1_115E + A3_115E OP AMPS + PRECISION RESISTOR NETWORK * CREATED ON 1/10/94 BY JLA * REV.A * NODE ASSIGNMENTS OF SUBCKT INA115 CORRESPOND TO SURFACE MOUNT PACKAGE OF * BURR-BROWN'S INA115 NO DIP AVAILABLE * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;


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    INA115E INA115 INA115 947E3 111E6 123E3 10E-12 5E-12 INA115E 115E 20E6 PDF

    pwm 20khz duty welding

    Abstract: CS01 PPL-21
    Text: L-Series High Reliability Radiation Tolerant DC/DC Converters DESCRIPTION FEATURES The L-Series of DC/DC converters are radiation tolerant, high reliability devices designed for moderate radiation environments such as those encountered by low earth orbit satellites and launch vehicles. For higher radiation


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    MIL-STD-975, MILSTD-1547 PPL-21 M3L2815D M3L2805S pwm 20khz duty welding CS01 PDF

    neutron detector

    Abstract: ART2800T AWG21 bergquist ge
    Text: PD - 94530A ARM28XXT SERIES 28V Input, Three Output ADVANCED ANALOG HYBRID - HIGH RELIABILITY 1 MEGA-RAD HARDENED DC/DC CONVERTER Description The ARM Series of three output DC/DC converters are designed specifically for use in the high-dose radiation environments encountered during deep space planetary missions. The extremely high level of radiation


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    4530A ARM28XXT neutron detector ART2800T AWG21 bergquist ge PDF

    AD8561S

    Abstract: AD8561 ad8561 precautions transistor C3220 LT1016 AD8561AN AD8561AR AD8561ARU c3220
    Text: a FEATURES 7 ns Propagation Delay at 5 V Single Supply Operation: 3 V to 10 V Low Power Latch Function TSSOP Packages APPLICATIONS High Speed Timing Clock Recovery and Clock Distribution Line Receivers Digital Communications Phase Detectors High Speed Sampling


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    LT1016 AD8561 AD8561 AD8561S ad8561 precautions transistor C3220 AD8561AN AD8561AR AD8561ARU c3220 PDF

    2E12

    Abstract: 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
    Text: FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


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    FSS430D, FSS430R 2E12 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3 PDF

    2E12

    Abstract: 3E12 FSYA450D FSYA450D1 FSYA450D3 FSYA450R FSYA450R1
    Text: FSYA450D, FSYA450R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


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    FSYA450D, FSYA450R 2E12 3E12 FSYA450D FSYA450D1 FSYA450D3 FSYA450R FSYA450R1 PDF

    5A12-7iR

    Abstract: 5A10-7iR 368-7IR 246-7iR S09023 128-7iR 1287I 5A11-2 366-7iR
    Text: PSC Series 6.12 A Switching Regulators Input voltage up to 144 V DC Single output of 3.3.36 V DC No input to output isolation • Efficiency up to 96% • Low input-output differential voltage • No derating over temperature Selection chart Output Uo nom Io nom


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    S09023 5A12-7iR 5A10-7iR 368-7IR 246-7iR S09023 128-7iR 1287I 5A11-2 366-7iR PDF

    op482arc/883

    Abstract: OP482 smd 43e OP282 OP282G OP282GP OP282GS OP-482 OP482GP OP482GS
    Text: a Dual/Quad Low Power, High Speed JFET Operational Amplifiers OP282/OP482 FEATURES High Slew Rate: 9 V/␮s Wide Bandwidth: 4 MHz Low Supply Current: 250 ␮A/Amplifier Low Offset Voltage: 3 mV Low Bias Current: 100 pA Fast Settling Time Common-Mode Range Includes V+


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    OP282/OP482 OP282/OP482 C00301 20-Position op482arc/883 OP482 smd 43e OP282 OP282G OP282GP OP282GS OP-482 OP482GP OP482GS PDF

    TC124E

    Abstract: No abstract text available
    Text: FDB8874 N-Channel PowerTrench MOSFET 30V, 121A, 4.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low


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    FDB8874 O-263AB TC124E PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM


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    FDP8880 FDB8880 FDB8880 O-263AB O-220AB PDF

    2E12

    Abstract: 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET
    Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


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    FRL430D, FRL430R, FRL430H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET PDF

    imperial m015

    Abstract: BF253
    Text: ANALOG ► DEVICES Dual/Quad Single Supply Operational Amplifier 0P292/0P492 FEATURES Single Supply Operation: 4.5 V to 33 V Input Common Mode Includes Ground Output Swings to Ground High Slew Rate: 3 V / jjls High Gain Bandwidth: 4 MHz Low Input Offset Voltage


    OCR Scan
    0P292/0P492 14-Lead OP292/OP492 SO-14 imperial m015 BF253 PDF

    02e3

    Abstract: SSM2135
    Text: Dual Single-Supply Audio Operational Amplifier ANALOG DEVICES SSM2135 FEATURES Excellent Sonic Characteristics High O utput Drive Capability 5.2 nV/VHz Equivalent Input Noise @ 1 kHz 0.001% THD+N V0 = 2.5 V p-p @ 1 kHz 3.5 M Hz Gain Bandwidth U nity-G ain Stable


    OCR Scan
    SSM2135 SSM2135 11E-13 48E-6WD= 53E16UO 10VMAX 75E-6 01TPG 02e3 PDF