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    MOSFET E72 Search Results

    MOSFET E72 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET E72 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    25N80C

    Abstract: No abstract text available
    Text: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions


    Original     		PDF 25N80C ISOPLUS220 E72873 25N80C

    "SOT-227 B" dimensions

    Abstract: 75N60 sot-227
    Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 75N60C VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S


    Original     		PDF 75N60C OT-227 E72873 "SOT-227 B" dimensions 75N60 sot-227

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S


    Original     		PDF 40N60C OT-227 E72873

    SOT-227 Package

    Abstract: E72873 SOT-227 heatsink
    Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 45N80C VDSS ID25 RDS on 800 V 44 A Ω 74 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S


    Original     		PDF 45N80C OT-227 E72873 SOT-227 Package E72873 SOT-227 heatsink

    40N60C

    Abstract: E72873
    Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S


    Original     		PDF 40N60C OT-227 E72873 40N60C E72873

    IXKN75N60C

    Abstract: 75n60 E72873
    Text: CoolMOS Power MOSFET IXKN 75N60C VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Preliminary miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S VGS ID25 ID90 dv/dt


    Original     		PDF 75N60C OT-227 E72873 IXKN75N60C IXKN75N60C 75n60 E72873

    SOT-227 heatsink

    Abstract: 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions
    Text: IXKN 75N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A Ω 36 mΩ D G Preliminary data S S miniBLOC, SOT-227 B E72873 MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90


    Original     		PDF 75N60C OT-227 E72873 SOT-227 heatsink 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions

    47N60C

    Abstract: No abstract text available
    Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 m Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G fl D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C


    Original     		PDF 47N60C O-247 E72873 ID100 20080523a 47N60C

    85N60C

    Abstract: UPS SIEMENS E72873 ID100
    Text: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 94 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-264 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C


    Original     		PDF 85N60C O-264 E72873 ID100 20080523a 85N60C UPS SIEMENS E72873 ID100

    85N60C

    Abstract: UPS SIEMENS E72873 ID100
    Text: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET TO-264 D G G  D S E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C


    Original     		PDF 85N60C O-264 E72873 ID100 20100315c 85N60C UPS SIEMENS E72873 ID100

    47N60C

    Abstract: 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100
    Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C


    Original     		PDF 47N60C O-247 E72873 ID100 20080523a 47N60C 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100

    Untitled

    Abstract: No abstract text available
    Text: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 m Low RDSon, high VDSS Superjunction MOSFET D TO-264 G G  D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C EAS


    Original     		PDF 85N60C O-264 E72873 ID100 20100315c

    40N60C

    Abstract: CoolMOS E72873 Ixkn 40n60 E72873 SOT-227
    Text: IXKN 40N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ D G S S miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C


    Original     		PDF 40N60C OT-227 E72873 40N60C CoolMOS E72873 Ixkn 40n60 E72873 SOT-227

    Untitled

    Abstract: No abstract text available
    Text: IXKN 40N60C COOLMOS * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ D G S S miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C


    Original     		PDF 40N60C OT-227 E72873

    20n60c

    Abstract: No abstract text available
    Text: IXKC 20N60C CoolMOS Power MOSFET VDSS = 600 V ID25 = 15 A RDS on max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features


    Original     		PDF 20N60C ISOPLUS220TM E72873 20n60c

    25N80C

    Abstract: 25n80 E72873 mosfet b4
    Text: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D q S S isolated back surface E72873 Features


    Original     		PDF 25N80C ISOPLUS220 E72873 20080526a 25N80C 25n80 E72873 mosfet b4

    20N60C

    Abstract: No abstract text available
    Text: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


    Original     		PDF 20N60C ISOPLUS220TM E72873 20080523a 20N60C

    25n8

    Abstract: No abstract text available
    Text: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 m N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D fl S S isolated back surface E72873 Features


    Original     		PDF 25N80C ISOPLUS220 E72873 0080526a 20080526a 25n8

    20N60C

    Abstract: IXKC 20n60c
    Text: IXKC 20N60C COOLMOS * Power MOSFET VDSS = 600 V ID25 = 15 A RDS on max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


    Original     		PDF 20N60C ISOPLUS220TM E72873 20N60C IXKC 20n60c

    Untitled

    Abstract: No abstract text available
    Text: IXKC 40N60C CoolMOS Power MOSFET VDSS = 600 V ID25 = 28 A RDS on max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features


    Original     		PDF 40N60C ISOPLUS220TM E72873

    Untitled

    Abstract: No abstract text available
    Text: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features


    Original     		PDF 40N60C ISOPLUS220TM E72873 20080523a

    40n60c

    Abstract: mosfet 4800 E72873
    Text: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


    Original     		PDF 40N60C ISOPLUS220TM E72873 20080523a 40n60c mosfet 4800 E72873

    fast diode SOT-227

    Abstract: 40N60C E72873 MOSFET 031
    Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A 70 mW N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B E72873


    Original     		PDF 40N60C OT-227 E72873 Mounti193 fast diode SOT-227 40N60C E72873 MOSFET 031

    20n60c

    Abstract: IXKC 20n60c E72873 A8711
    Text: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


    Original     		PDF 20N60C ISOPLUS220TM E72873 20080523a 20n60c IXKC 20n60c E72873 A8711