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    47N60C Search Results

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    47N60C Price and Stock

    Infineon Technologies AG SPW47N60C3FKSA1

    MOSFET N-CH 650V 47A TO247-3
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    DigiKey SPW47N60C3FKSA1 Tube 405 1
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    Avnet Americas SPW47N60C3FKSA1 Bulk 16 Weeks, 4 Days 1
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    Newark SPW47N60C3FKSA1 Bulk 5,969 1
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    Chip1Stop SPW47N60C3FKSA1 Tube 98
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    Win Source Electronics SPW47N60C3FKSA1 49,999
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    Littelfuse Inc IXKR47N60C5

    MOSFET N-CH 600V 47A ISOPLUS247
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    DigiKey IXKR47N60C5 Tube 111 1
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    Chip1Stop IXKR47N60C5 1,050
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    IXYS Corporation IXKH47N60C

    MOSFET N-CH 600V 47A TO247AD
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    TME IXKH47N60C 1
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    IXYS Corporation IXKH47N60CC3

    MOSFET N-CH 600V 47A TO247AD
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    Infineon Technologies AG SPW47N60CFDFKSA1

    MOSFET N-CH 600V 46A TO247-3
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    DigiKey SPW47N60CFDFKSA1 Tube 240
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    TME SPW47N60CFDFKSA1 1
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    EBV Elektronik SPW47N60CFDFKSA1 16 Weeks 240
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    47N60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXKR 47N60C5 Advanced Technical Information COOLMOS * Power MOSFET VDSS = 600 V ID25 = 47 A RDS on max = 45 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS247TM


    Original     		PDF 47N60C5 ISOPLUS247TM E72873 20080225a

    47n60

    Abstract: 47N60C 47N60C5 IXKR E72873 v1207v ixkr47n60c5
    Text: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		PDF 47N60C5 ISOPLUS247TM E72873 20080523b 47n60 47N60C 47N60C5 IXKR E72873 v1207v ixkr47n60c5

    47N60C3

    Abstract: IXKH47N60C3 smps high power ID100 065B1 47n60
    Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKH 47N60C3 VDSS = 600 V ID25 = 47 A Ω RDS on = 70 mΩ Low RDS(on), High Voltage, Superjunction MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25 TC = 25°C


    Original     		PDF 47N60C3 ID100 O-247 728B1 065B1 123B1 47N60C3 IXKH47N60C3 smps high power ID100 065B1 47n60

    47N60C

    Abstract: 47N60 24 volts 100 amperes smps UPS 380v power mosfet 350v 30a to 247 ID100 UPS SIEMENS
    Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKH 47N60C VDSS = 600 V ID25 = 47 A Ω RDS on = 70 mΩ Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25


    Original     		PDF 47N60C ID100 O-247 728B1 065B1 123B1 47N60C 47N60 24 volts 100 amperes smps UPS 380v power mosfet 350v 30a to 247 ID100 UPS SIEMENS

    47N60C

    Abstract: 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100
    Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C


    Original     		PDF 47N60C O-247 E72873 ID100 20080523a 47N60C 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100

    Untitled

    Abstract: No abstract text available
    Text: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS247TM


    Original     		PDF 47N60C5 ISOPLUS247TM E72873 20080523b

    47N60C

    Abstract: No abstract text available
    Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 m Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G fl D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C


    Original     		PDF 47N60C O-247 E72873 ID100 20080523a 47N60C

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		PDF AN-CoolMOS-07 Room14J1 Room1101 AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5

    SPW47N60C3

    Abstract: 47n60c3
    Text: 47N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 SPW47N60C3 47n60c3

    47n60cfd

    Abstract: 47N60 SPW47N60CFD marking code s46 47N60C
    Text: 47N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD 47n60cfd 47N60 SPW47N60CFD marking code s46 47N60C

    47N60C2

    Abstract: 2002-08-12 SPW47N60C2 47n60 SDP06S60 TID10
    Text: 47N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 VDS 600 V • Ultra low gate charge RDS(on) 0.07 Ω • Periodic avalanche rated ID 47 A • Extreme dv/dt rated


    Original     		PDF SPW47N60C2 P-TO247 Q67040-S4323 47N60C2 47N60C2 2002-08-12 SPW47N60C2 47n60 SDP06S60 TID10

    47n60cfd

    Abstract: SPW47N60CFD S47A 47N60C Q67045A5051 JESD22 47N60
    Text: 47N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD 47n60cfd SPW47N60CFD S47A 47N60C Q67045A5051 JESD22 47N60

    47n60c3

    Abstract: SPW47N60C3 SDP06S60 617 300
    Text: 47N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 SPW47N60C3 SDP06S60 617 300

    47n60cfd

    Abstract: SPW47N60CFD 47n60 JESD22 Q67045A5051 marking code s46
    Text: 47N60CFD CoolMOSTM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD 47n60cfd SPW47N60CFD 47n60 JESD22 Q67045A5051 marking code s46

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    47n60C3

    Abstract: 47N60C SPW47N60C3 SDP06S60
    Text: 47N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60C3 47N60C SPW47N60C3 SDP06S60

    47N60C2

    Abstract: SPW47N60C2 SDP06S60
    Text: 47N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 VDS 600 V • Ultra low gate charge RDS(on) 0.07 Ω • Periodic avalanche rated ID 47 A • Extreme dv/dt rated


    Original     		PDF SPW47N60C2 P-TO247 Q67040-S4323 47N60C2 47N60C2 SPW47N60C2 SDP06S60

    47n60C3

    Abstract: SPW47N60C3 47N60 SDP06S60
    Text: 47N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60C3 SPW47N60C3 47N60 SDP06S60

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    47n60c3

    Abstract: SPW47N60C3 47N60 SDP06S60 tp 2116 Pulse-10
    Text: 47N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A •=Ultra low effective capacitances


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 SPW47N60C3 47N60 SDP06S60 tp 2116 Pulse-10

    47n60c3

    Abstract: SPW47N60C3 47N60 SDP06S60 47N60C
    Text: 47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 SPW47N60C3 47N60 SDP06S60 47N60C

    47n60c3

    Abstract: 47n60 Q67040-S4491 47N60C 47n60c3 infineon
    Text: 47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 47n60 Q67040-S4491 47N60C 47n60c3 infineon

    47n60c3

    Abstract: P-TO247 47N60C P-TO-247 SPW47N60C3 47n60c3 infineon 2449
    Text: 47N60C3 Target data sheet Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.07 Ω


    Original     		PDF SPW47N60C3 P-TO247 47N60C3 47n60c3 P-TO247 47N60C P-TO-247 SPW47N60C3 47n60c3 infineon 2449