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    47N60 Price and Stock

    Vishay Siliconix SIHG47N60AE-GE3

    MOSFET N-CH 600V 43A TO247AC
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    DigiKey SIHG47N60AE-GE3 Tube 3,338 1
    • 1 $5.27
    • 10 $5.27
    • 100 $3.8962
    • 1000 $3.8962
    • 10000 $3.8962
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    Rochester Electronics LLC FCH47N60N

    POWER FIELD-EFFECT TRANSISTOR, 4
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    DigiKey FCH47N60N Bulk 1,045 35
    • 1 -
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    • 100 $8.75
    • 1000 $8.75
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    STMicroelectronics STB47N60DM6AG

    AUTOMOTIVE-GRADE N-CHANNEL 600 V
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    DigiKey STB47N60DM6AG Cut Tape 939 1
    • 1 $6.49
    • 10 $5.56
    • 100 $4.633
    • 1000 $4.08792
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    Mouser Electronics STB47N60DM6AG 281
    • 1 $6.49
    • 10 $5.56
    • 100 $4.63
    • 1000 $3.67
    • 10000 $3.44
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    Flip Electronics FCH47N60-F085

    600V, 47A, 64M, TO-247N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCH47N60-F085 Tube 900 50
    • 1 -
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    • 100 $10.22
    • 1000 $10.22
    • 10000 $10.22
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    Vishay Siliconix SIHW47N60E-GE3

    MOSFET N-CH 600V 47A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHW47N60E-GE3 Tube 410 1
    • 1 $6.59
    • 10 $6.59
    • 100 $5.261
    • 1000 $4.875
    • 10000 $4.875
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    Find more 47N60 price and stock on Findchips.com

    47N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXKR 47N60C5 Advanced Technical Information COOLMOS * Power MOSFET VDSS = 600 V ID25 = 47 A RDS on max = 45 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS247TM


    Original     		PDF 47N60C5 ISOPLUS247TM E72873 20080225a

    47n60

    Abstract: 47N60C 47N60C5 IXKR E72873 v1207v ixkr47n60c5
    Text: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		PDF 47N60C5 ISOPLUS247TM E72873 20080523b 47n60 47N60C 47N60C5 IXKR E72873 v1207v ixkr47n60c5

    47N60C3

    Abstract: IXKH47N60C3 smps high power ID100 065B1 47n60
    Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKH 47N60C3 VDSS = 600 V ID25 = 47 A Ω RDS on = 70 mΩ Low RDS(on), High Voltage, Superjunction MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25 TC = 25°C


    Original     		PDF 47N60C3 ID100 O-247 728B1 065B1 123B1 47N60C3 IXKH47N60C3 smps high power ID100 065B1 47n60

    47N60C

    Abstract: 47N60 24 volts 100 amperes smps UPS 380v power mosfet 350v 30a to 247 ID100 UPS SIEMENS
    Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKH 47N60C VDSS = 600 V ID25 = 47 A Ω RDS on = 70 mΩ Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25


    Original     		PDF 47N60C ID100 O-247 728B1 065B1 123B1 47N60C 47N60 24 volts 100 amperes smps UPS 380v power mosfet 350v 30a to 247 ID100 UPS SIEMENS

    47N60C

    Abstract: 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100
    Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C


    Original     		PDF 47N60C O-247 E72873 ID100 20080523a 47N60C 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100

    Untitled

    Abstract: No abstract text available
    Text: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS247TM


    Original     		PDF 47N60C5 ISOPLUS247TM E72873 20080523b

    47N60C

    Abstract: No abstract text available
    Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 m Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G fl D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C


    Original     		PDF 47N60C O-247 E72873 ID100 20080523a 47N60C

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		PDF AN-CoolMOS-07 Room14J1 Room1101 AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5

    SPW47N60C3

    Abstract: 47n60c3
    Text: 47N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 SPW47N60C3 47n60c3

    47N60

    Abstract: 47N60S5 SPW47N60S5 P-TO247
    Text: 47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47N60 47N60S5 SPW47N60S5 P-TO247

    47n60cfd

    Abstract: 47N60 SPW47N60CFD marking code s46 47N60C
    Text: 47N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD 47n60cfd 47N60 SPW47N60CFD marking code s46 47N60C

    47N60S5

    Abstract: SPW47N60S5
    Text: 47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47N60S5 SPW47N60S5

    47N60C2

    Abstract: 2002-08-12 SPW47N60C2 47n60 SDP06S60 TID10
    Text: 47N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 VDS 600 V • Ultra low gate charge RDS(on) 0.07 Ω • Periodic avalanche rated ID 47 A • Extreme dv/dt rated


    Original     		PDF SPW47N60C2 P-TO247 Q67040-S4323 47N60C2 47N60C2 2002-08-12 SPW47N60C2 47n60 SDP06S60 TID10

    47n60cfd

    Abstract: SPW47N60CFD S47A 47N60C Q67045A5051 JESD22 47N60
    Text: 47N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD 47n60cfd SPW47N60CFD S47A 47N60C Q67045A5051 JESD22 47N60

    47N60S5

    Abstract: 47n60s5 to247 SPW47N60S5 47N60 P-TO247 47n60s
    Text: 47N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated


    Original     		PDF SPW47N60S5 P-TO247 SPWx0N60S5 Q67040-S4240 47N60S5 47N60S5 47n60s5 to247 SPW47N60S5 47N60 P-TO247 47n60s

    47n60cfd

    Abstract: SPW47N60CFD 47n60 JESD22 Q67045A5051 marking code s46
    Text: 47N60CFD CoolMOSTM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD 47n60cfd SPW47N60CFD 47n60 JESD22 Q67045A5051 marking code s46

    47N60S5

    Abstract: 47N60 F47A DT 94 SPW47N60S5 47n60s5 to247
    Text: 47N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO 247 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity


    Original     		PDF SPW47N60S5 SPWx0N60S5 P-TO247 47N60S5 Q67040-S4240 SPW47N60S5 47N60S5 47N60 F47A DT 94 47n60s5 to247

    47n60s5

    Abstract: SPW47N60S5 47n60 SPW47N60 47n60s
    Text: 47N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.07 Ω • Extreme dv/dt rated


    Original     		PDF SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47n60s5 SPW47N60S5 47n60 SPW47N60 47n60s

    irfp460 dc welding circuit diagram

    Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers


    Original     		PDF AN-CoolMOS-02 Room14J1 Room1101 irfp460 dc welding circuit diagram irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt

    47N60S5

    Abstract: 47n60 SPW47N60S5
    Text: 47N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 • Ultra low gate charge G,1 • Periodic avalanche proved 1 S,3 2 3 • Extreme dv/dt rated COOLMOS • Optimized capacitances


    Original     		PDF SPW47N60S5 SPWx0N60S5 SPW47N60S5 P-TO247 47N60S5 Q67040-S4140 47N60S5 47n60

    47N60S1

    Abstract: FMW47N60S1 FMW47N60S1HF n channel mosfet 300v 80a FMW-4
    Text: / 47N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg


    Original     		PDF FMW47N60S1HF O-247-P2 47N60S1 FMW47N60S1 FMW47N60S1HF n channel mosfet 300v 80a FMW-4

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    47n60C3

    Abstract: 47N60C SPW47N60C3 SDP06S60
    Text: 47N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60C3 47N60C SPW47N60C3 SDP06S60

    47N60S1

    Abstract: 47N60 n channel mosfet 300v 80a SCHEMATIC ups FMH47N60S1 FUJI DATE CODE IRP10 fuji electric lot code
    Text: / 47N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-3P 13 ± 0.2 4.5±0.2 Drain D UPS Server Telecom Power conditioner system Power supply 1.6


    Original     		PDF FMH47N60S1 47N60S1 47N60 n channel mosfet 300v 80a SCHEMATIC ups FMH47N60S1 FUJI DATE CODE IRP10 fuji electric lot code