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    COOLMOS Price and Stock

    IXYS Corporation IXKR40N60C

    MOSFETs 40 Amps 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXKR40N60C Tube 30
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    • 100 $20.2
    • 1000 $16.68
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    IXYS Corporation IXKC20N60C

    MOSFETs 14 Amps 600V 0.19 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXKC20N60C Box 50
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    • 100 $9.23
    • 1000 $9.23
    • 10000 $9.23
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    IXYS Corporation LKK47-06C5

    MOSFETs 47 Amps 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI LKK47-06C5 Tube 250
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    • 1000 $34.11
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    IXYS Corporation IXKH35N60C5

    MOSFETs 35 Amps 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXKH35N60C5 Tube 300
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    • 1000 $6.73
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    IXYS Corporation IXKH70N60C5

    MOSFETs 70 Amps 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXKH70N60C5 Tube 300
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    • 1000 $14.91
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    Find more COOLMOS price and stock on Findchips.com

    COOLMOS Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CoolMOS Infineon Technologies CoolMOS Brochure Original PDF
    CoolMOS Infineon Technologies CoolMOS C2 Advertisement Original PDF
    CoolMOS Infineon Technologies Cross Reference - CoolMOS Original PDF

    COOLMOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT77N60JC3

    Abstract: No abstract text available
    Text: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package


    Original     		PDF APT77N60JC3 OT-227 APT77N60JC3

    TO247AD

    Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
    Text: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions


    Original     		PDF 40N60C ISOPLUS247TM 247TM E153432 TO247AD TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247

    SOT-227 heatsink

    Abstract: 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions
    Text: IXKN 75N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A Ω 36 mΩ D G Preliminary data S S miniBLOC, SOT-227 B E72873 MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90


    Original     		PDF 75N60C OT-227 E72873 SOT-227 heatsink 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions

    APT0406

    Abstract: APT0502 solar converter
    Text: APTCV60TLM70T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 29A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies


    Original     		PDF APTCV60TLM70T3G APT0406 APT0502 solar converter

    CoolMOS Power Transistor

    Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
    Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF ISOPLUS220TM 25N80C E153432 065B1 728B1 123B1 CoolMOS Power Transistor POWER MOSFET 4600 UPS SIEMENS 25N80C

    01N60S5

    Abstract: 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
    Text: SPU01N60S5 SPD01N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


    Original     		PDF SPU01N60S5 SPD01N60S5 P-TO252 P-TO251-3-1 SPUx7N60S5/SPDx7N60S5 Q67040-S4193 01N60S5 01N60S5 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original     		PDF SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60

    SIPC69N60C2

    Abstract: No abstract text available
    Text: Preliminary SIPC69N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC69N60C2


    Original     		PDF SIPC69N60C2 Q67050A4073-A001 5443-N, SIPC69N60C2

    tda4864

    Abstract: zero crossing detector mosfet MUR115 1N4937 ICE1PD165G IEC555 active harmonic filter infineon MOSFET parameter test
    Text: Infineon Technologies preliminary ICE1PD165G Power Factor Controller + Cool- MOS: BoostSET IC for High Power Factor and low THD •=IC for sinusoidal line-current consumption •=Controller and CoolMOS within one package •=P-DSO-16-10 •=Power factor achieves nearly 1


    Original     		PDF ICE1PD165G P-DSO-16-10 0-150V 1N4937 MUR115 TDA4864 tda4864 zero crossing detector mosfet MUR115 1N4937 ICE1PD165G IEC555 active harmonic filter infineon MOSFET parameter test

    diode IN 34A

    Abstract: APT34N80B2C3 APT34N80LC3
    Text: APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package D


    Original     		PDF APT34N80B2C3 APT34N80LC3 O-264 O-264 APT34N80B2C3 O-247 diode IN 34A APT34N80LC3

    c9015

    Abstract: mosfet L 3055 APT31N60BCS APT31N60BCSG APT31N60SCS APT31N60SCSG APT15D 18A100 R6015
    Text: 600V 31A 0.100Ω APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET COOLMOS B TO Power Semiconductors -2 47 D3PAK • Ultra Low RDS(ON) (S) • Low Miller Capacitance • Ultra Low Gate Charge, Qg


    Original     		PDF APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* O-247 c9015 mosfet L 3055 APT31N60BCS APT31N60BCSG APT31N60SCS APT31N60SCSG APT15D 18A100 R6015

    infineon 6r045

    Abstract: mosfet 6r045 IPW60R045CS 6r045 infineon 6r045 PG-TO-247-3 Q67045A5061 JESD22 PG-TO247-3 IPW60R045
    Text: IPW60R045CS CoolMOS TM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R045CS PG-TO247-3 Q67045A5061 6R045 infineon 6r045 mosfet 6r045 IPW60R045CS 6r045 infineon 6r045 PG-TO-247-3 Q67045A5061 JESD22 PG-TO247-3 IPW60R045

    SIPC26N60C2

    Abstract: No abstract text available
    Text: Preliminary SIPC26N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC26N60C2


    Original     		PDF SIPC26N60C2 Q67050A4087-A001 5433N, SIPC26N60C2

    SIPC10N60S5

    Abstract: No abstract text available
    Text: Preliminary SIPC10N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60S5


    Original     		PDF SIPC10N60S5 Q67050A4072-A001 5353-N, SIPC10N60S5

    SIPC06N60S5

    Abstract: Infineon CoolMOS
    Text: Preliminary SIPC06N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC06N60S5


    Original     		PDF SIPC06N60S5 5423N, SIPC06N60S5 Infineon CoolMOS

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Text: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original     		PDF

    85N60C

    Abstract: UPS SIEMENS E72873 ID100
    Text: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET TO-264 D G G  D S E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C


    Original     		PDF 85N60C O-264 E72873 ID100 20100315c 85N60C UPS SIEMENS E72873 ID100

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		PDF AN-CoolMOS-07 Room14J1 Room1101 AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    9R120C

    Abstract: IPW90R120C3 9r120 CoolMOS Power Transistor IPW90R120C3 INFINEON 900 V 36 A IPW90R120C3 INFINEON JESD22
    Text: IPW90R120C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J=25°C 0.12 Ω Q g,typ 260 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW90R120C3 PG-TO247 9R120C 9R120C IPW90R120C3 9r120 CoolMOS Power Transistor IPW90R120C3 INFINEON 900 V 36 A IPW90R120C3 INFINEON JESD22

    coolsettm-f2

    Abstract: ICE2A380 ICE2A380P2 coolsettmf2 K X365
    Text: D a t a s h e e t V e r s i o n 0 .0 , 2 3 S e p 2 00 4 CoolSET -F2 ICE2A380P2 Off-Line SMPS Current Mode Controller with integrated 800V CoolMOS™ Power Management & Supply N e v e r s t o p t h i n k i n g . CoolSET™-F2 ICE2A380P2 Revision History:


    Original     		PDF ICE2A380P2 coolsettm-f2 ICE2A380 ICE2A380P2 coolsettmf2 K X365

    6r125p

    Abstract: transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125
    Text: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R125CP PG-TO220-3-31 SP000095275 6R125P 6r125p transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125

    6r165p

    Abstract: 6R165 IPW60R165CP PG-TO247 JESD22 SP000095483
    Text: IPW60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R165CP PG-TO247-3-1 SP000095483 6R165P 6r165p 6R165 IPW60R165CP PG-TO247 JESD22 SP000095483

    6r385P

    Abstract: 6r385p infineon 6r385 IPA60R385CP JESD22 PG-TO220-3-31 SP000089316 IPA60R385 D-52
    Text: IPA60R385CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x QG 650 0.385 Ω R DS on ,max • Ultra low gate charge V Q g,typ 17 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R385CP PG-TO220-3-31 SP000089316 6R385P 6r385P 6r385p infineon 6r385 IPA60R385CP JESD22 PG-TO220-3-31 SP000089316 IPA60R385 D-52