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    MMFT960T1 Price and Stock

    onsemi MMFT960T1

    MOSFET N-CH 60V 300MA SOT223
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    DigiKey MMFT960T1 Cut Tape 1
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    Bristol Electronics MMFT960T1 321
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    onsemi MMFT960T1G

    MOSFET N-CH 60V 300MA SOT223
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    MMFT960T1G Digi-Reel 1
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    Bristol Electronics MMFT960T1G 36
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    Motorola Semiconductor Products MMFT960T1

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    Bristol Electronics MMFT960T1 129
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    Quest Components MMFT960T1 101
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    MMFT960T1 208
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    MMFT960T1 603
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    MMFT960T1 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MMFT960T1 Motorola FET Transistor, Medium Power Field Effect Transistor N-Channel Enhancement-Mode Original PDF
    MMFT960T1 Motorola MEDIUM POWER TMOS FET 300 mA 60 VOLTS Original PDF
    MMFT960T1 On Semiconductor Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 Original PDF
    MMFT960T1 On Semiconductor Power MOSFET 300 mA, 60 Volts Original PDF
    MMFT960T1 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 1000mA, 60V, Pkg Style SOT223 Scan PDF
    MMFT960T1/D On Semiconductor N-hannel Enhancement-ode Silicon Gate Original PDF
    MMFT960T1-D On Semiconductor Power MOSFET 300 mA, 60 Volts N-Channel SOT-223 Original PDF
    MMFT960T1G On Semiconductor Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 Original PDF
    MMFT960T1G On Semiconductor Power MOSFET 300 mA, 60 Volts Original PDF

    MMFT960T1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FT960

    Abstract: MMFT960T1 MMFT960T3 SMD310
    Text: MOTOROLA Order this document by MMFT960T1/D SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for


    Original     		PDF MMFT960T1/D MMFT960T1 FT960 MMFT960T1 MMFT960T3 SMD310

    ft960

    Abstract: MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET
    Text: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223


    Original     		PDF MMFT960T1 OT-223 OT-223 MMFT960T1/D ft960 MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET

    TSOP 48 thermal resistance

    Abstract: BC237 Transistor BC107b motorola transistor 2N3819 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as


    Original     		PDF MMFT96218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 TSOP 48 thermal resistance BC237 Transistor BC107b motorola transistor 2N3819 BCY72

    Untitled

    Abstract: No abstract text available
    Text: MMFT960T1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)30 I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)800m’ Minimum Operating Temp (øC)-65


    Original     		PDF MMFT960T1

    FT960

    Abstract: ft960 sot-223 MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET
    Text: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223


    Original     		PDF MMFT960T1 OT-223 OT-223 MMFT960T1/D FT960 ft960 sot-223 MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223


    Original     		PDF MMFT960T1 MMFT960T1/D

    FT960

    Abstract: MMFT960T1 SMD310
    Text: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc–dc converters, solenoid and relay drivers. The device is housed in the SOT–223


    Original     		PDF MMFT960T1 r14525 MMFT960T1/D FT960 MMFT960T1 SMD310

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    CS5170

    Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
    Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .


    Original     		PDF SGD501/D Janua667 CS5170 mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control

    N-Channel JFET FETs

    Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
    Text: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are


    Original     		PDF O-226AA O-220AB MTP6P20E MTP12P10 OT-223) MTP50P03HDL MMFT960T1 FT960 N-Channel JFET FETs Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


    Original     		PDF VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original     		PDF ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    ft960

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Pow er Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power sw itching a pplications such as


    OCR Scan     		PDF OT-223 MMFT960d MMFT960T1 ft960

    FT960

    Abstract: No abstract text available
    Text: MMFT960T1* M AXIM UM RATINGS T q = 25°C Unless O therw ise Noted Rating Symbol Value Unit V d SS 60 Volts Drain-to-Gate Voltage Vd g 60 Volts G ate-to-Source Voltage — C ontinuous VGS r 30 Volts Drain C urrent — C ontinuous — Pulsed 'D 'DM 1.0 2.0


    OCR Scan     		PDF FT960 MMFT960T1* 318E-04, OT-223 O-261AA) MMFT960T1

    sot223, 31 64

    Abstract: No abstract text available
    Text: 1 MOTOROLA Order this document by m m fto o ti/d SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS


    OCR Scan     		PDF OT-223 MMFT960T1/D sot223, 31 64

    FT960

    Abstract: No abstract text available
    Text: Order this data sheet by MMFT960T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent-M ode Silicon G ate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as


    OCR Scan     		PDF MMFT960T1/D OT-223 FT960

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1.7 OHM MAX This TMOS medium power field effect transistor is designed for


    OCR Scan     		PDF MMFT960T1 OT-223 b3b7255

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1-7 OHM MAX This TMOS medium power field effect transistor is designed for


    OCR Scan     		PDF OT-223