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    MMFT960T3 Search Results

    MMFT960T3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MMFT960T3 Motorola FET Transistor, Medium Power Field Effect Transistor N-Channel Enhancement-Mode Original PDF
    MMFT960T3 On Semiconductor MMFT960 - TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA, CASE 318E-04, 4 PIN, FET General Purpose Small Signal Original PDF

    MMFT960T3 Datasheets Context Search

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    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


    Original
    PDF VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S

    FT960

    Abstract: MMFT960T1 MMFT960T3 SMD310
    Text: MOTOROLA Order this document by MMFT960T1/D SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for


    Original
    PDF MMFT960T1/D MMFT960T1 FT960 MMFT960T1 MMFT960T3 SMD310

    TSOP 48 thermal resistance

    Abstract: BC237 Transistor BC107b motorola transistor 2N3819 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as


    Original
    PDF MMFT96218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 TSOP 48 thermal resistance BC237 Transistor BC107b motorola transistor 2N3819 BCY72

    ft960

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Pow er Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power sw itching a pplications such as


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    PDF OT-223 MMFT960d MMFT960T1 ft960

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1-7 OHM MAX This TMOS medium power field effect transistor is designed for


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    PDF OT-223

    sot223, 31 64

    Abstract: No abstract text available
    Text: 1 MOTOROLA Order this document by m m fto o ti/d SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS


    OCR Scan
    PDF OT-223 MMFT960T1/D sot223, 31 64

    FT960

    Abstract: No abstract text available
    Text: Order this data sheet by MMFT960T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent-M ode Silicon G ate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as


    OCR Scan
    PDF MMFT960T1/D OT-223 FT960

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1.7 OHM MAX This TMOS medium power field effect transistor is designed for


    OCR Scan
    PDF MMFT960T1 OT-223 b3b7255