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    MITSUBISHI RF POWER Search Results

    MITSUBISHI RF POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    MITSUBISHI RF POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RA60H1317M1

    Abstract: FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-026-E Date : 18th April 2003 Rev. date : 15th March ‘05 Prepared : K. Kajiwara Confirmed : T. Okawa SUBJECT: ELECTRO STATIC SENSITIVITY FOR MITSUBISHI RF POWER MODULE RA* series


    Original     		PDF AN-GEN-026-E AN-GEN-026-E RA30H4452M 440-520MHz, 200pF, RA60H1317M1 FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M

    shinetsu G746 rohs

    Abstract: shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-006-D th Date : 30 May 2001 Rev. date : 26th Dec. 2006 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR MITSUBISHI RF POWER DEVICES GENERAL:


    Original     		PDF AN-GEN-006-D shinetsu G746 rohs shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER

    rd02mus1

    Abstract: AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017 Date : 23th Dec. 2002 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD02MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and


    Original     		PDF AN-UHF-017 RD02MUS1 RD02MUS1. RD02MUS1: 023XA" 146MHz 175MHz 440MHz 450MHz 470MHz AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER

    RD01MUS1

    Abstract: micro strip line MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019 Date : 9th Jan. 2003 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD01MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data with


    Original     		PDF AN-UHF-019 RD01MUS1 RD01MUS1. RD01MUS1: 022XA" 136MHz 155MHz 175MHz 520MHz 0mm/50 micro strip line MITSUBISHI APPLICATION NOTE RF POWER

    RD12MVP1

    Abstract: RD12MVS1
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034 Date: 10th Feb. 2006 Prepared: E.Akiyama S.Kametani Confirmed: SUBJECT: T.Ohkawa RD12MVP1 135-175MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout


    Original     		PDF AN-VHF-034 RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/175MHz: RD12MVS1

    RD07MVS1

    Abstract: micro strip line
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-B Date : 12th jun. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and


    Original     		PDF AN-UHF-018-B RD07MVS1 RD07MVS1. RD07MVS1: 025XA" 031AA" 470MHz 136MHz 136MHz) 155MHz micro strip line

    RD09MUP2

    Abstract: 555 application note
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-UHF-072 Date: 6th Feb. 2006 Prepared: M.Miyashita S.Kametani Confirmed: SUBJECT: T.Ohkawa “RD09MUP2” 400-520MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout


    Original     		PDF AN-UHF-072 RD09MUP2" 400-520MHz RD09MUP2 RD09MUP2: 059XA-G" 400/520MHz 520MHz 3mm/50OHM 330pF 555 application note

    AN-UHF-027-B

    Abstract: RD07MVS1 adj 2576 6926 b 946 MITSUBISHI APPLICATION NOTE RF POWER mitsubishi 5247
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-027-B Date : 16th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF Wide band DUT characteristics data Po vs. Frequency


    Original     		PDF AN-UHF-027-B RD07MVS1 RD07MVS1. RD07MVS1: 031AA" 450-520MHz AN-UHF-027-B 450-520MHz) adj 2576 6926 b 946 MITSUBISHI APPLICATION NOTE RF POWER mitsubishi 5247

    transistor t06

    Abstract: 828 TRANSISTOR equivalent
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINEDRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.


    Original     		PDF RD00HHS1 30MHz RD00HHS1 30MHz 48MAX 53MAX transistor t06 828 TRANSISTOR equivalent

    RD07MVS1

    Abstract: RD01MUS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006 Date : 21th Aug. 2003 Prepared : M.Wada Confirmed : T.Ohkawa RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data Po vs. Frequency


    Original     		PDF AN-900-006 RD07MVS1 RD01MUS1 800MHz RD07MVS1: 031AA" RD01MUS1: 764-870MHz RD07MVS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735

    diode gp 429

    Abstract: RD01MUS1 RD07MVS1B RD07M RD07MVS AN-900-028
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028 Date : 6th July. 2007 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: : T.Ohkawa RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz. SUMMARY: This application note shows the RF Wide band characteristics data


    Original     		PDF AN-900-028 RD01MUS1 RD07MVS1B 740-870MHz. RD07MVS1B: 068YD-G" RD01MUS1: RD07MVS1B 740-870MHz diode gp 429 RD01MUS1 RD07M RD07MVS AN-900-028

    RD07MVS1

    Abstract: RD01MUS1
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008 Date : 7th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data


    Original     		PDF AN-900-008 RD01MUS1 RD07MVS1 800MHz RD07MVS1: 031AA" RD01MUS1: RD07MVS1 740-870MHz RD01MUS1

    mitsubishi rf power selection

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER DEVICE PRECAUTIONS AND RECOMMENDATIONS GENERAL Mitsubishi RF Power Devices designed for mobile and radio, 9.6V, 7.2V for portable radio. For base bias lead or lead portable radio applications have high reliability and good which performance, as they are designed and manufactured under


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI DISCRETE SC blE ]> 1,24^05^ GG1SE71 T40 H n iT 5 MITSUBISHI RF POWER TRANSISTOR 2SC2797 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION OUTLINE DRAWING 2SC2797 is a silicon NPN epitaxial planar type transistor designed for RF broad-band power amplifiers in U H F band.


    OCR Scan     		PDF GG1SE71 2SC2797 2SC2797

    M68732SHA

    Abstract: No abstract text available
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE M68732SHA Silicon MOS FET Power Amplifier, 470-520MHz 6.7W FM PORTABLE PIN: l.Pin :RF INPUT :GATE BIAS SUPPLY 3 .V D D :DRAIN BIAS SUPPLY 4 .P0 :RF OUTPUT


    OCR Scan     		PDF M68732SHA 470-520MHz 25deg 50ohms 50ohms M68732SHA

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57739C 824~849MHz, 12.5V, 6W, FM MOBILE RADIO PIN : P in ©VCCI VCC2 ®Po ®GND : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25T unless otherwise noted) Symbol Vcci Vcc2 Icc


    OCR Scan     		PDF M57739C 849MHz, 0Qlb204

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57788L 400-430MHZ, 12.5V, 40W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dim ensions in mm <5> «Hh PIN : Pin DVCC1 (DVCC2 VCC3 ©Po ®GND : : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY 3rd. DC SUPPLY RF OUTPUT FIN


    OCR Scan     		PDF M57788L 400-430MHZ, 400MHz 430MHz

    pj 70

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M67769C 889-915MHz, 12.5V, 13W, FM MOBILE RADIO PIN : <DPin : RF INPUT VCC1 : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY ®VCC3 : 3rd. DC SUPPLY ®PO : RF OUTPUT <g GND : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25X unless otherwise noted)


    OCR Scan     		PDF M67769C 889-915MHz, -----ICC31 pj 70

    transistor tc 144 m57726

    Abstract: m57726
    Text: MITSUBISHI RF POWER MODULE M57726 144-148MHz, 12.5V, 43W, FM MOBILE RADIO BLOCK DIAGRAM <f> PIN : CDPin : RF INPUT ®VCC1 : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY @Po : RF OUTPUT ®GND : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25 “C unless otherwise noted


    OCR Scan     		PDF M57726 144-148MHz, transistor tc 144 m57726 m57726

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57704SH 490-512MHz, 12.5V, 13W, FM MOBILE RADIO Rn ©VCCI VCC 2 ®VCC3 ©Po ©GND : : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY 3rd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 2 5 ‘C unless otherwise noted


    OCR Scan     		PDF M57704SH 490-512MHz,

    Untitled

    Abstract: No abstract text available
    Text: . MITSUBISHI RF POWER MODULE bSMiaSÌ 0Q17475 232 • - M67798LA 144-148MHz, 9.6V, 8W FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : Pin @VGG VDD ®P0 ®GND : RF INPUT : GATE BIAS SUPPLY : DRAIN BIAS SUPPLY : RF OUTPUT : FIN H46


    OCR Scan     		PDF 0Q17475 M67798LA 144-148MHz,

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57714UH 470-490MHz, 12.5V, 7W, FM MOBILE RADIO PIN : t Rn VCCI ®VCC2 &VCC3 ®PO ® GND : RF INPUT : 1st. DC SUPPLY : 2nd. DC SUPPLY : 3rd. DC SUPPLY ; RF OUTPUT : FIN ABSOLUTE MAXIMUM RATINGS (Tc = 25T: unless otherwise noted)


    OCR Scan     		PDF M57714UH 470-490MHz,

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M67741H 150-175MHz, 12.5V, 30W, FM MOBILE RADIO BLOCK DIAGRAM PIN : Pin : RF INPUT ©VCCI : 1st. DC SUPPLY <S VCC2 : 2nd. DC SUPPLY @P0 : RF OUTPUT GND : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25 X i unless otherwise noted) Symbol


    OCR Scan     		PDF M67741H 150-175MHz, 150MHz 163MHz 175MHz 175MHz 002SESQ

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57704EL 335-360MHZ, 12.5V, 13W, FM MOBILE RADIO P in VCC! ®VCC2 ®VCC3 ®PO ®GND : : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY 3rd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted


    OCR Scan     		PDF M57704EL 335-360MHZ,