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    Untitled

    Abstract: No abstract text available
    Text: plerowTM APL0146-R PLL Synthesizer Module • 5 dBm Output Level at 146MHz The plerowTM PLL synthesizer module was designed for use in wireless and wireline systems in a wide range of frequency from 50 MHz to 6 GHz. ASB’s PLL provides exceptionally low spurious and phase noise


    Original     		PDF APL0146-R 146MHz 100MHz

    Untitled

    Abstract: No abstract text available
    Text: ICS9342 Integrated Circuit Systems, Inc. Preliminary Product Preview 133MHz Clock Generator and Integrated Buffer for PowerPC Recommended Application: Power PC System Clock Output Features: • 12- CPUs @3.3V, up to 146MHz • 1- PCIREF @3.3V, up to 73MHz


    Original     		PDF ICS9342 133MHz 146MHz 73MHz 64MHz 318MHz 146MHz 318MHz ICS9342yF-T

    7493 pin diagram

    Abstract: cpu11 ICS9112-17 133M 318M ICS9342 7493 logic diagram
    Text: Integrated Circuit Systems, Inc. ICS9342 133MHz Clock Generator and Integrated Buffer for PowerPC Recommended Application: Power PC System Clock Output Features: • 12- CPUs @ 3.3V, up to 146MHz • 1- PCIREF @ 3.3V, up to 73MHz • 1 - OUT 3.3V, 64MHz


    Original     		PDF ICS9342 133MHz 146MHz 73MHz 64MHz 318MHz 146MHz 318MHz ICS9342yF-T 7493 pin diagram cpu11 ICS9112-17 133M 318M ICS9342 7493 logic diagram

    RD30HVF1

    Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 RD30HVF1-101 rf power transistor rd30hvf1 100OHM

    ADC11DL066

    Abstract: ADC12D040 ADC12DL066 ADC12DL066CIVS ADC12DL066EVAL DA11 LM4051CIM3-ADJ LMH6702
    Text: ADC12DL066 Dual 12-Bit, 66 MSPS, 450 MHz Input Bandwidth A/D Converter w/Internal Reference General Description Features The ADC12DL066 is a dual, low power monolithic CMOS analog-to-digital converter capable of converting analog input signals into 12-bit digital words at 66 Megasamples per


    Original     		PDF ADC12DL066 12-Bit, ADC12DL066 12-bit ADC11DL066 ADC12D040 ADC12DL066CIVS ADC12DL066EVAL DA11 LM4051CIM3-ADJ LMH6702

    RD02MUS1

    Abstract: 146MHz 488-MHz
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017-B Date : 23th Dec. 2002 Rev.date : 7thJan. 2010 Prepared : T.Akaishi S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1 RF characteristics data


    Original     		PDF AN-UHF-017-B RD02MUS1 RD02MUS1. RD02MUS1: 023XA" 146MHz 146MHz) 175MHz 175MHz) 440MHz 146MHz 488-MHz

    AN1393

    Abstract: ADC12DL065 ADC12L066 ADC12L080 AN-1393 LMH6550 12L080
    Text: ெࡔࡔॆӷ‫ິࠅ༹ڞ‬ ᆌᆩጀ๥AN1393 Loren Siebert 2006౎5ሆ ჋ስፌॅ‫ٷݣݴֶڦ‬ഗઠൻ‫ۯ‬ᅃ߲ఇె ຕጴገ࣑ഗ Nyquist֑ᄣۨ૙ă Nyquist૙ஃ‫׃‬௽Lj‫ܔ‬႑ࡽ֑ᄣ‫ڦ‬ೕ ࢇ๢‫ߛڦ‬໏ֶ‫ٷݣݴ‬ഗࣷߴԈࡤߛ໏ఇెຕጴገ࣑


    Original     		PDF AN1393 ADC12DL065 12L080 64MHz, AN-1393 AN201592 300Hz 3000Hz 24MHz AN1393 ADC12DL065 ADC12L066 ADC12L080 AN-1393 LMH6550

    rd02mus1

    Abstract: AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017 Date : 23th Dec. 2002 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD02MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and


    Original     		PDF AN-UHF-017 RD02MUS1 RD02MUS1. RD02MUS1: 023XA" 146MHz 175MHz 440MHz 450MHz 470MHz AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101

    RD30HVF1

    Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet

    TRANSISTOR BD 689

    Abstract: No abstract text available
    Text: Part Number: Integra IDM165L650 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT VHF-Band Pulsed Power Transistor The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device


    Original     		PDF IDM165L650 IDM165L650 IDM165L650- TRANSISTOR BD 689

    MITSUBISHI RF POWER MOS FET

    Abstract: 071J
    Text: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3


    Original     		PDF RD30HVF1 175MHz RD30HVF1 RD30HVF1-101 Oct2011 MITSUBISHI RF POWER MOS FET 071J

    CLC5903

    Abstract: EDGE22 ADC12DL080
    Text: DESIGN idea Expert tips, tricks, and techniques for analog designs 中間周波 IF サンプリング方式を用いた レシーバ・アーキテクチャ by Mark Rives, Principal Applications Engineer 本稿は中間周波(IF)サンプリング方式を用いて構


    Original     		PDF 200kHz13MHz 244MHz) Fs/20Hz ADC12DL080 ADC12DL0806 13MHz 78MSPS( 39MHz 78MHz CLC5903 EDGE22 ADC12DL080

    TRANSISTOR SMD MARKING CODE w2

    Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
    Text: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright


    Original     		PDF

    212J

    Abstract: rd30hvf
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 RD30HVF1 175MHz RD30HVF1-101 212J rd30hvf

    M67746

    Abstract: 146MHz t6060 144-148MHZ 300MW
    Text: MITSUBISHI RF POWER MODULE M67746 144-148MHz, 12.5V, 60W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 3±0.3 2 60±0.5 7.25±0.8 3 51.5±0.5 1 4 2-R2±0.5 1 2 3 4 5 5 φ 0.82±0.15 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY 3 VCC2 : 2nd. DC SUPPLY


    Original     		PDF M67746 144-148MHz, VCC112 46MHz 146MHz 300mW M67746 146MHz t6060 144-148MHZ 300MW

    transistor D 1666

    Abstract: MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 transistor D 1666 MITSUBISHI RF POWER MOS FET RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET

    146MHz

    Abstract: M68750 144-148MHZ
    Text: MITSUBISHI RF POWER MODULE M68750 144-148MHz, 12.5V, 27W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±1 2 60±1 3 4 51.5±0.5 2 R1.5 1 4 2-R2±0.3 1 5 2 3 4 5 5 φ 0.45±0.15 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY 3 VCC2 : 2nd. DC SUPPLY


    Original     		PDF M68750 144-148MHz, VCC112 146MHz, 146MHz M68750 144-148MHZ

    Untitled

    Abstract: No abstract text available
    Text: ADC12DL066 www.ti.com SNAS188G – FEBRUARY 2004 – REVISED FEBRUARY 2013 ADC12DL066 Dual 12-Bit, 66 Msps, 450 MHz Input Bandwidth A/D Converter w/Internal Reference Check for Samples: ADC12DL066 FEATURES DESCRIPTION • The ADC12DL066 is a dual, low power monolithic


    Original     		PDF ADC12DL066 SNAS188G ADC12DL066 12-Bit, ADC12D040 12-bit

    SJ 2252 CIRCUIT DIAGRAM

    Abstract: sj 2252 ic DB4170
    Text: % M i c r o Linear ML2252, ML2259 \x ? Compatible 8-Bit A / D Converters with 2- or 8-Channel Multiplexer GENERAL DESCRIPTION FEATURES The ML2252 and ML2259 combine an 8 -bit A/ D converter, 2 -or 8 -channel analog multiplexer, and a microprocessor compatible 8 -bit parallel interface and control logic in a sin­


    OCR Scan     		PDF ML2252, ML2259 ML2252 ML2259 20-PIN ML2252BMJ ML2252BIJ ML2252BCP ML2252BCQ ML2252CI) SJ 2252 CIRCUIT DIAGRAM sj 2252 ic DB4170

    Untitled

    Abstract: No abstract text available
    Text: October 1988 H ^ M ic ro Linear ML2252, ML2259 /uP Compatible 8-Bit A/D Converters with 2- or 8-Channel Multiplexer GENERAL DESCRIPTION FEATURES The ML2252 and ML2259 combine an 8 -bit A / D converter, 2 - or 8 -channel analog multiplexer, and a microprocessor


    OCR Scan     		PDF ML2252, ML2259 ML2252 ML2259 1-46M 28-PIN ML2259BMJ ML2259BIJ ML2259BCP ML2259BCQ

    M57737

    Abstract: p01 transistor transistor tc 144 transistor power rating 5w TRANSISTOR JC PINw10 transistor c 144 Mitsubishi transistor rf final
    Text: MITSUBISHI RF POWER MODULE M57737 144-148MHz, 12.5V, 30W, FM MOBILE RADIO OUTLINE DRAWING Dim ensions in mm PIN : P in : RF IN P U T © V C C 1 : 1st. DC S U P P L Y V C C 2 : 2nd . DC S U P P L Y ®PO : RF O U T P U T ® G N D : FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 2 5 <1C unless otherwise noted


    OCR Scan     		PDF M57737 144-148MHz, M57737 p01 transistor transistor tc 144 transistor power rating 5w TRANSISTOR JC PINw10 transistor c 144 Mitsubishi transistor rf final

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M67746 144-148MHz, 12.5V, 60W, FM MOBILE RADIO OUTLINE DRAWING D im ensions in mm BLOCK DIAGRAM PIN: 3 Pin : RF IN PU T (g V C C 1 : 1st. DC S U P PLY V C C 2 : 2nd. DC S U P PLY ©PO : RF O U TP U T © G N D : FIN H2 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF M67746 144-148MHz, 146MHz

    M68702L

    Abstract: il68
    Text: MITSUBISHI RF POWER MODULE M68702L 135-160MHz, 12.5V, 60W, FM MOBILE RADIO O U TLIN E DR AW IN G Dimensions in mm PIN : P in : RF INPUT CDVcci : 1st. DC SUPPLY VCC 2 : 2nd. DC SUPPLY ® PO : RF OUTPUT ® G N D : FIN A B S O L U T E M AXIM UM RA TING S Tc = 25 ‘C unless otherwise noted


    OCR Scan     		PDF M68702L 135-160MHz, f-135MHz 146MHz M68702L il68