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    Toshiba America Electronic Components MG25M2YK9

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MG25M2YK9 80 1
    • 1 $54
    • 10 $51.921
    • 100 $44.28
    • 1000 $44.28
    • 10000 $44.28
    		Buy Now
    Quest Components MG25M2YK9 64
    • 1 $58.5
    • 10 $58.5
    • 100 $51.75
    • 1000 $51.75
    • 10000 $51.75
    		Buy Now

    MG25M Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MG25M1BK1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG25M1BK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG25M1BK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG25M1BK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG25M2CK2 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG25M2CK2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG25M2CK2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG25M2YK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG25M2YK1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG25M2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG25M2YK1 Westcode Semiconductors NPN transistor for high power switching and notor control applications, 1000V, 25A Scan PDF
    MG25M2YK9 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG25M2YK9 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG25M2YK9 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG25M2YL1 Unknown Scan PDF
    MG25MCK1 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    MG25M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    tbf819

    Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
    Text: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種


    Original     		PDF 04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3 1SV204 1SV216 2SC2483 tbf819 mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


    Original     		PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A

    MG25M2CK2

    Abstract: t100a mg25m2
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG25M2CK2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolation from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain


    OCR Scan     		PDF MG25M2CK2 MG25M2CK2 t100a mg25m2

    mg25m2

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG25M2YK1 HIGH POWER S W I T C H N G APPLICATIONS. riOTOR CONTROL APPLICATIONS. FEATURES: . The C o l l e c t o r is Isolated . 2 P o we r T r a n s i s t o r s a n d Diodes a r e B u i l t - i n from Case. 2 F re e Wheeling


    OCR Scan     		PDF MG25M2YK1 mg25m2

    mg25m2yk9

    Abstract: MG25M NPN Transistor VCEO 1000V
    Text: GTR MODULE_ SILICON NPN TRIPLE DIFFUSED TYPE MG25M2YK9 HIGH POWER SWITCHING APPLICATIONS. Unit in mro MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.


    OCR Scan     		PDF MG25M2YK9 mg25m2yk9 MG25M NPN Transistor VCEO 1000V

    MG25M1BK1

    Abstract: MG30M1BN1 MG200M1FK1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100
    Text: Bipolar Darlington 2 Connection Vceo(SUS) (V) 10 15 20 BK 25 Maximum Rating M A) 50 MG25M1BK1 MG50M1BK1 75 100 150 200 300 MG75M1BK1 1000 MG30M1BN1 (SINGLE) FK MG200M1FK1 MG300M1FK1 1000 MG200M1UK1 MG300M1UK1 1200 MG200Q1UK1 MG300Q1UK1 MG300M1UK2 UK 1400


    OCR Scan     		PDF MG30M1BN1 MG50M1BK1 MG75M1BK1 MG25M1BK1 MG200M1FK1 MG200M1UK1 MG300M1FK1 MG300M1UK1 MG300M1UK2 MG25M2CK2 MG25M1BK1 MG30M1BN1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100

    NPN Transistor VCEO 1000V

    Abstract: mg25m2
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG25M2YK9 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 4-FA ST -O N -T A B # 1 1 0 . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.


    OCR Scan     		PDF MG25M2YK9 2-94DIA 00A//Js NPN Transistor VCEO 1000V mg25m2

    MG25M1BK1

    Abstract: MG25M1
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG25M1BK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolation from Case. . High DC Current Gain : hpg=100 Min. (1q = 25A) . Low Saturation Voltage : VC E (sat)=2.5V(Max.)


    OCR Scan     		PDF MG25M1BK1 MG25M1BK1 MG25M1

    MG25M2YK1

    Abstract: MG25M
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG25M2YK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The C o l l e c t o r i s I s o l a t e d fro m C a se . . 2 Power T r a n s i s t o r s and 2 F r e e W h e e lin g D io d e s a r e B u i l t - i n to 1 P a c k a g e .


    OCR Scan     		PDF MG25M2YK1 MG25M2YK1 MG25M

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} "TD DE| TO^HSO 9097250 TOSHIBA DISCRETE/OPTO tfosììUk ODlbBlS 90D 163 15 3 DT- 33-35 SEMICONDUCTOR TOSHIBA G-TR MODULE TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE MG25M2CK2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG25M2CK2 50/ia1 EGA-MG25M2CK2-4

    MG25M1BK1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG25M1BK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm FEATURES: . The Collector Is Isolation from Case. . High DC Current Gain : hpE^lOO Min. (IC=25A) . Low Saturation Voltage '• VCE(sat)~2•5V(Max. ) (Ic=25A)


    OCR Scan     		PDF MG25M1BK1 MG25M1BK1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA { D IS CRET E/ OP TO } TO 9097 25 0 T O S H I B A <DISCRETE/OP O D eT| T G 'iV ESO 90D SEMICONDUCTOR 16311 DD1L311 D T -3 '3 -3 5 TOSHIBA GTR MODULE MG25M1BK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE Unit In mm HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF DD1L311 MG25M1BK1 IC-25A) DDlb314 Te---40â LLEC70R-EMITTER 70LTA0E eca-mg25mibki-4

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    30U6P42

    Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
    Text: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir­ cuit The switching regulator IC TA76524P which


    OCR Scan     		PDF 24VDC 110VAC 100kHz TA76524P 2SK358 100VAC MG15N6EK1 MG25M2YK1X3 30U6P42 MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z

    MG15G1AL3

    Abstract: MG50G1BL3 mg30g1bl3 MG25M1BK1 MG30G1BL4 MG30G1JL1 MG50m1bk1 2-33c1a 2-22b1a MG200
    Text: 213 — — * 2 -OA E2 Bl E1/ K ( C 2 ) B2 : NC Ì Ì 3 . x-f -v-f (T, ttfc*Œ z -f 7 f- > y m i (V) on I, V CE ft V be + J- î 7 y • 3 u ? ?fi' a m - - - K = 25°C ) V f ( u s) L I Ul , t , (V) R !h (,-c) , Ip ( u s) I? V be di/dt (A) CC/W) m - F §15


    OCR Scan     		PDF 2-22B1A MG15G1AL3 2-33F1A MG15H1AL1 2-33D1A MG25M1BK1 2-33C1A MG30G1BL3 H-101 MG15G1AL3 MG50G1BL3 mg30g1bl3 MG25M1BK1 MG30G1BL4 MG30G1JL1 MG50m1bk1 2-22b1a MG200

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA "t o {DISCRETE/OPTO} 9097250 TOSHIBA TO SH IB A DE|im7aSD 90D DIS C R E T E / O P T O SEMICONDUCTOR OOlbOSfl 1 I 16058 D T -3 3 - 3 5 ' TOSHIBA GTR MODULE M G 2 5 M 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF

    Snubber circuit Design

    Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
    Text: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very


    OCR Scan     		PDF 30U6P42 50U6P43 75U6P43 100U6P43 Snubber circuit Design MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    NPN VCE0 1000V

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50M2YK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The C o l l e c t o r i s I s o l a t e d from Case. . 2 Power T r a n s i s t o r s and 2 F re e Wheeling Diodes a r e B u i t - i n to 1 Pac kage.


    OCR Scan     		PDF MG50M2YK1 MG25M2YK1 NPN VCE0 1000V

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1

    Untitled

    Abstract: No abstract text available
    Text: DESCRIPTION GENDER 1-9 10-124 Gender Changers Shielded and Insulated to Guard Against RFI/EMi Emissi ns atajCabling 1 MODEL 25-99 l Handy devices enable the mating o f cables o f the same gender. This series is metal encas d for maximum shielding and insulated with molded vinyl.


    OCR Scan     		PDF MG15F MG15M MG25F MG25M MG37F MG37M MG50F MG50M HT319C