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    MG400H1 Search Results

    MG400H1 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MG400H1FK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG400H1FK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG400H1FK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG400H1FK1 Toshiba Silicon NPN Triple Diffused Type GTR Module Scan PDF
    MG400H1FL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG400H1FL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG400H1FL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG400H1UL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG400H1UL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG400H1UL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG400H1US1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG400H1US1 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    MG400H1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


    Original     		PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A

    MG400H1FK1

    Abstract: LF400A
    Text: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage


    OCR Scan     		PDF MG400H1FK1 TjSl85' MG400H1FK1 LF400A

    MG400H1UL1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hpE=80 Min. (Ic =400A) . Low Saturation Voltage


    OCR Scan     		PDF MG400H1UL1 MG400H1UL1

    MG400H1US1

    Abstract: LF400A LF400
    Text: GTR MODULE SILICON N CHANNEL IGBT MG400H1US1 HIGH P OWER S W I T C H I N G APPLICATIONS. M O T O R C O N T R O L A PPLICATIONS. . High Input Impedance . High Speed : tf = 1. Ofis Max. trr=0.5ys(Max.) . Low Saturation Voltage: V q e (sat)= 5 .OV(Max.) . Enhancement-Mode


    OCR Scan     		PDF MG400H1US1 MG400H1US1 LF400A LF400

    MG400H1UL1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. M O TOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Whe-eling Diode . High DC Current Gain : hFE=80 Min. (IC=400A) . Low Saturation Voltage


    OCR Scan     		PDF MG400H1UL1 00A/iis MG400H1UL1

    ica 700 Y

    Abstract: transistor 16299
    Text: TOSHIBA -CDISCRETE/OPTOÏ 9097250 TOSHIBA TO SH IBA TD DISCRETE/OPTO 1)1 ^ 0^7550 OOlbETt 3 DT-3 3 - 3 5 90D 16296 SEMICONDUCTOR TOSHIBA GTR MODULE TECHNICAL DATA MG400H1F L 1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG400H1F ica 700 Y transistor 16299

    MG400H1FL1

    Abstract: transistor CD 910 ga3n
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1FL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M 6 . . . . The Collector Is Isolated from Case. With Built-in Free Wheeling Diode High DC Current Gain : hyE=80 Min. (Ic =400A)


    OCR Scan     		PDF MG400H1FL1 00A/ys MG400H1FL1 transistor CD 910 ga3n

    MG400H1US1

    Abstract: igbt toshiba mg ic 1200 p 60
    Text: TOSHIBA SEMICONDUCTOR TOSHIBA GTR MODULE MG400H1US1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. g B MAXIMUM RATINGS (Ta= 25°C) SYMBOL CHARACTER IST IC UNIT RATING C O i 1ret n r-Eni i11 C T Vo 11 ag i’ VCES 500 V G a1 e - Em it ter V o 11a g e


    OCR Scan     		PDF MG400H retTe-25 MG400H1 MG400H1U 0001-r- MG400H1US1 igbt toshiba mg ic 1200 p 60

    MG400H1US1

    Abstract: LF400A
    Text: GTR MODULE_ SILICON N CHANNEL IGBT MG400H1US1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=1.0ys Max. trr=0.5ys(Max.) . Low Saturation Voltage: VcE(sat)=5.0V(Max.) . Enhancement-Mode . The Electrodes are Isolated from Case.


    OCR Scan     		PDF MG400H1US1 l251C MG400H1US1 LF400A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA { D ISC RE TE /O PT O} 9097250 TOSHIBA • ^ SOTTESO -ODlbEÌS fa | DISCRETE/OPTO 90D SEMICONDUCTOR 16292 D*T-33-35 TOSHIBA GTR MODULE MG400H1FK1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF T-33-35 MG400H1FK1 Ta-25Â 70LTAO p-33-35â CA-MC400H1FK.

    MG400H1FK1

    Abstract: BX 330 transistor
    Text: T O S HIBA {DISCRETE/OPTO} 9097250 TOSHIBA "Tü D Ë ] i m 7 a S D <DISCRETE/OPTO> 90D 16292 -DDlbE^a D T - 33-35 TOSHIBA GTR MODULE SEMICONDUCTOR MG400H1FK1 i SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF DT-33-35 MG400H1FK1 R2VER33 1984-A-5 BX 330 transistor

    MG30H1BL1

    Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
    Text: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL


    OCR Scan     		PDF 2SD1314* MG50G1BL3 MG30G18L4 MG15H1AL1 S3885* MG30H1BL1 MG100G1AL3 MG100G1FL1 MG150H1FL1 MG200H1FL1A S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 A1015 MG50G6EL9 MG150H2YL1

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    mg400g1ul1

    Abstract: LF400A
    Text: ~=m T O S H I B A { D I S C R E T E/0PT039097250 TOSHIBA TOSHIBA CDISCRETE/OPTO DÉTI^cmaso DGitoma a | _ 90D SEMICONDUCTOR 16046 D T '3 3 -3 5 TOSHIBA GTR MODULE MG400G1UL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF E/0PT039097250 MG400G1UL1 IC-400A) EGA-MG400H1UL1-4 mg400g1ul1 LF400A

    Snubber circuit Design

    Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
    Text: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very


    OCR Scan     		PDF 30U6P42 50U6P43 75U6P43 100U6P43 Snubber circuit Design MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1

    MG400G1UL1

    Abstract: MG400H1FL1 mg400h1ul1 MG300M1FK1 mg400h1fk1 MG300G1UL1 ku 602 vc MG200M1UK1 MG200Q1UK1 MG300H1UL1
    Text: — 214 — N F S , > t > » « . V - 'l 1f lñ * UK-2 U L _j 0 c 1 1 1 K ïW O BX OE c BX C 1 * & V CBO S V CE X (SUS) V bbo M 1c g fe I CP (T . i B I p (la s ) (V ) (V ) (V ) (A ) (A ) (A ) (A ) I FU Pc (In s ) (a i) (A ) (W ) = 2 5 °C ) T , T , v , 10


    OCR Scan     		PDF H-101 MG400G1UL1 MG400H1FL1 mg400h1ul1 MG300M1FK1 mg400h1fk1 MG300G1UL1 ku 602 vc MG200M1UK1 MG200Q1UK1 MG300H1UL1

    H-17

    Abstract: H-18 H-19
    Text: — 210 — l- 7 > ÿ 7 ? - iÿ i- A y 'in / N 'f t t 'ii/ ¡ GB T ÎÎ 2. AC, S £ V CE3 VoES c CP [F (Ins) (V ) (V ) (A ) (A ) (A ) I FU Pe (lis ) (a i) (A ) (W ) T , T . t, V il0 ( & 2) (°C ) (°C) (V ) I GE S ( n A) ft * ! CBS VcE (V) (mA) ft * VcBS


    OCR Scan     		PDF H-101 H-17 H-18 H-19

    MG400H1FL1

    Abstract: TOSHIBA Thyristor calculation of IGBT snubber transistor circuit design
    Text: 3.1 GTR Module Ratings The main maximum rating items include the emitter, base and collector currents of tran­ sistors, voltage between terminals, power dissi­ pation, junction temperature, storage tempera­ ture, etc. These characteristics are all closely


    OCR Scan     		PDF