MEL82
Abstract: MI38T
Text: CRO MEL82 N PN SILICON PHOTO TRANSISTOR DESCRIPTION 02.97 0.117 MEL82 is NPN silicon planar photo transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. / 4*.1 • (0.16) 0.75(0.03)_ max. It features ultra high illumination
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MEL82
MI38T
20mW/cm3
100ohm
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MEL82
Abstract: MI38T MIB38T MIB38T-K
Text: MI38T MIB38T MIB38T-K INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, MI38T & MIB38T are mechanically and spectrally matched to the MEL82 series photo transistor.
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MI38T
MIB38T
MIB38T-K)
MI38T
MIB38T
MEL82
MIB38T-K
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MEL82
Abstract: MI38T MIB38T MIB38T-K
Text: ORO MI38T MIB38T MIB38T-K INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type Ieadframe, MI38T & MJB38T are mechanically and spectrally matched to the MEL82 series photo transistor.
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MI38T
MIB38T
MIB38T-K)
MI38T
MIB38T
MJB38T
MEL82
100mA
MIB38T-K
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MEL82
Abstract: MI38T MIB38T MIB38T-K
Text: CRO MI38T MIB38T MIB38T-K INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, MI38T & MIB38T are mechanically and spectrally matched to the MEL82 series photo transistor.
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MI38T
MIB38T
MIB38T-K)
MI38T
MIB38T
MEB38T
MEL82
100mA
MIB38T-K
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MAL100
Abstract: MEL12 CL138 MEL31 MEL32 transistor case To 106 FPT100 FPT100A FPT100B FPT110
Text: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30
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CL138
O-106
FPT100
O-106
FPT100A
FPT100B
FPT110
FPT110A
MAL100
MEL12
MEL31
MEL32
transistor case To 106
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MEL12
Abstract: MAL100 transistor case To 106 mel32 photo transistor CL138 FPT100B MEL11 MEL11A FPT100 FPT110
Text: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30
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CL138
O-106
FPT100
O-106
FPT100A
FPT100B
FPT110
FPT110A
MEL12
MAL100
transistor case To 106
mel32 photo transistor
MEL11
MEL11A
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Untitled
Abstract: No abstract text available
Text: MIB38T-K MI38T-K MI 3 8 T & MIB38T are GaAlAs infrared emitting d i o d e m olded in a flangless 3mra 0 clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, it has an narrow radiation angle m e a s u r e d from the optical axis to the half
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MIB38T
MI38T
MEL82
MI38T-K
MIB38T-K
100mA
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MEL12
Abstract: MAL100 MEL31 MEL32 mel32 photo transistor CL138 MEL11 FPT100B FPT100 FPT100A
Text: TYPE NO. CL138 POLARITY Photo Transistor P d mW 1 C (mA) V CEO (V) MIN MAX N* 300 100 18 15 MAXIMUM RATINGS 1 I L (rrw CASE D (nA) max V CE (V) PACKAGE H (mW/cm2) V CE (V) 80 2 3 1000 5 TO-106 1-49 5 5 5 5 5 5 100 100 100 5 5 5 TO-106 1-49 NO. FPT100 FPT100A
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CL138
O-106
FPT100
FPT100A
FPT100B
FPT110
FPT110A
O-106F
FPT110B
MEL12
MAL100
MEL31
MEL32
mel32 photo transistor
MEL11
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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057-2G
1611G
1620G
1621-2G
1623G
1641G
1N4001
1N4002
1N4004
1N4005
2SA532
BC109 BC184 BC549
BC317
2SC734 Y
MS181A
BC159 8
2SC876
TTP31A
ML78M06A
BC357
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Untitled
Abstract: No abstract text available
Text: IUI I • I U ■ I D ■ I DARLINGTON TRANSISTOR I DESCRIPTION S>2.97<0.117> MDL82 is NPN silicon planar photo darlington transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. / N \ 4. <0.16 T
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MDL82
MEL82)
100ohm
MDL82
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MEL82
Abstract: MI38T
Text: NPN SILICON PHOTO TRANSISTOR DESCRIPTION 02.97 0.117 M EL82 is NPN silicon p lanar ph o to transistor. It is encapsulated in a 3m m diam eter, low profile and r 4*1 • (0.16) flangeless water clear transparent epoxy package. It features sensitivity,
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MEL82
MI38T
20mW/cm2
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L303A
Abstract: DL78 L 31A MA1515 EL79D
Text: Pin Photo Diodes TYPE NO. >_p nm SENSITIVITY Id H (nA/lx) MAX TYP (mW/cm) (nA) ^on toff VR (V) TYP (ns) TYP (ns) ML303 940 50 5 30 10 50 50 ML303B 880 50 5 30 10 50 50 ML308 940 45 1 30 10 50 50 ML308A 880 45 1 30 10 50 50 PACKAGE CASE NO. Side On Type L-303a
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ML303
ML303B
ML308
ML308A
L-303a
-308C
MEL78
MEL78D
MEL79
EL79D
L303A
DL78
L 31A
MA1515
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