EIA-583
Abstract: JEP-113 EIA 481 rev d JESD-625 US020 SOT-89-AV ML0606-A EIA-481 empty pockets EIA 481 ML3030
Text: Tape and Reel Packaging and Handling Requirements Rev C 2/3/09 TABLE OF CONTENTS Section Section Description Page 1.0 SCOPE 3 2.0 APPLICABLE DOCUMENTS 3 3.0 MATERIALS 3 4.0 REQUIREMENTS 4 4.1 Approved Package Tapes 4 4.2 ESD Handling 15 4.3 Taping 15 4.4 Packaging
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XA20053B
EIA-481-B
JESD-625
EIA-583
JEP-113
EIA 481 rev d
JESD-625
US020
SOT-89-AV
ML0606-A
EIA-481 empty pockets
EIA 481
ML3030
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nokia mobile jumper setting
Abstract: nokia 100 mobile jumper setting LG mobile usb cable wire pin diagram nokia mobile phone repair circuit SD-C2502 nokia mobile charger circuit mainboard t 13 epson nokia 520 scheme nokia 100 mobile jumper KEY PAD IC circuit diagram of nokia 101
Text: TravelMate 610 Service Guide Service guide files and updates are available on the AIPG/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: 49.41Q04.001 DOC. NO.: SG363-0103A PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on TravelMate 610 service guide.
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41Q04
SG363-0103A
nokia mobile jumper setting
nokia 100 mobile jumper setting
LG mobile usb cable wire pin diagram
nokia mobile phone repair circuit
SD-C2502
nokia mobile charger circuit
mainboard t 13 epson
nokia 520 scheme
nokia 100 mobile jumper KEY PAD IC
circuit diagram of nokia 101
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Silectron core
Abstract: TWC-500 permalloy 80 2605SC ring core permalloy bh curve supermalloy bh curve MAGNESIL - N Transformer and Inductor Design Handbook, orthonol ring core permalloy 80
Text: TAPE WOUND CORES Division of Spang & Company DESIGN MANUAL TWC-500 ABOUT MAGNETICS Since 1949 Magnetics, a division of Spang & Company, has been a leading world supplier of precision, high permeability magnetic components and materials to the electronics industry. Applications for
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TWC-500
TWC-500
Silectron core
permalloy 80
2605SC
ring core permalloy bh curve
supermalloy bh curve
MAGNESIL - N
Transformer and Inductor Design Handbook,
orthonol
ring core permalloy 80
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Untitled
Abstract: No abstract text available
Text: m MÊÊk PV ML303B MICRO •= DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It feaxires high sensitivity and small junction capacitance make it possible to operate at high frequency application.
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ML303B
ML303B
150mW
ML3038
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H-90
Abstract: ML303B
Text: ML303B PIN PHOTO DIODE DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. R2.5 0.1 5.0(0.2 It feaxires high sensitivity 3.0 (0.13) 0.6(0.024) x45° « . 5(0.06) and small junction capacitance make it possible
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ML303B
100mA
150mW
H-90
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Untitled
Abstract: No abstract text available
Text: CRO ML303B PIN PHOTO DIODE DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It fea:ures high sensitivity and small junction capacitance make it possible to operate at high frequency application.
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ML303B
ML303B
Oct-98
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Untitled
Abstract: No abstract text available
Text: CRO ML303 PIN PHOTO DIODE DESCRIPTION ML303 is a side on type PIN photodiode with inherent visible light encapsulation. It features R2.5 0.•• D 5.0(0.2 rejective filter epoxy high sensitivity ( r 3.0 <0.13) 0.6(0.024) _ J x45° i 1.5(0.06) 1 and smali junction capacitance m ake it possible
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ML303
ML303
100mA
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n004
Abstract: MIB57T-K ML303
Text: CRO MEB57T-K INFRARED EMITTING DIODE 04.98 DESCRIPTION " 0 . 196 MIB57T-K is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303.
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MIB57T-K
ML303.
10/iiS,
100mA
100mA
150mW
n004
ML303
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MIB57T-K
Abstract: ML303
Text: MEB57T-K INFRARED EMITTING DIODE 04.98 ’ 0.196 DESCRIPTION MIB57T-K is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303. 6.7
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MEB57T-K
MIB57T-K
B57T-K
ML303.
100mA
150mW
ML303
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MIB57T-K
Abstract: ML303
Text: CRO MEB57T-K INFRARED EMITTING DIODE 04.98 ' 0.196 DESCRIPTION MIB57T-K is a GaAIAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303.
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MIB57T-K
ML303.
10/Lts,
100mA
4351G
100mA
150mW
ML303
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L303A
Abstract: DL78 L 31A MA1515 EL79D
Text: Pin Photo Diodes TYPE NO. >_p nm SENSITIVITY Id H (nA/lx) MAX TYP (mW/cm) (nA) ^on toff VR (V) TYP (ns) TYP (ns) ML303 940 50 5 30 10 50 50 ML303B 880 50 5 30 10 50 50 ML308 940 45 1 30 10 50 50 ML308A 880 45 1 30 10 50 50 PACKAGE CASE NO. Side On Type L-303a
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ML303
ML303B
ML308
ML308A
L-303a
-308C
MEL78
MEL78D
MEL79
EL79D
L303A
DL78
L 31A
MA1515
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ML3038
Abstract: ML303B
Text: MICRO PIN PHOTO DIODE DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It feaxires high sensitivity and small junction capacitance make it possible to operate at high frequency application.
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ML303B
100mA
ML3038
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ML303
Abstract: 2870
Text: ML303 PIN PHOTO DIODE DESCRIPTION ML303 is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It features R2.5 0.1 - ( 5.0(0.2)- high sensitivity D 3,0 0,6(0,024) x45° (0-13) .5(0.06} and small junction capacitance make it possible
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ML303
100mA
150mW
Ct-2870Â
4351Q
2870
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Untitled
Abstract: No abstract text available
Text: Pin Photo Diodes TYPE NO. X.p nm ML303 ML308 940 940 SENSITIVITY (nA/lx) 50 25 Id H MAX (mW/cm1) (nA) 5 1 30 30 VR (V) 10 10 t«lf TYP TYP (ns) (ns) 50 50 50 50 PACKAGE CASE NO. Side On Type Black Plastic 1-77 1-78 Photo Transistor TYPE NO. MALI 00 MAH 100
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ML303
ML308
MEL78
MEL80
MEL79
MEL79D
MEL709
O-18L
O-18H
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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057-2G
1611G
1620G
1621-2G
1623G
1641G
1N4001
1N4002
1N4004
1N4005
2SA532
BC109 BC184 BC549
BC317
2SC734 Y
MS181A
BC159 8
2SC876
TTP31A
ML78M06A
BC357
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MI301
Abstract: No abstract text available
Text: bSMTôET DD1 7 7 3 2 LTT • ANTENNA SWITCH M I303 PIN DIODE RF POWER SWITCHING DESCRIPTION Dimension: mm OUTLINE DRAWING The MI303 PIN diode is employing high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.
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MI303
MI301
MI303
230nH
MI301
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ML309
Abstract: No abstract text available
Text: MICRO ELECTRONICS LTD SIE D • bOT17flfi GOÜ1G1S TTH ■ MEHK Infrared Emitting Diodes T -4 I-1 3 TYPE p Àp V TYP mW (mA) f MAX (V) 1 2 01/2 1 PACKAGE CASE 35 35 03.2mm 0.69" lead 1-5 20 20 35 35 T-1 standard 03.0mm 1-43 2.0 2.0 100 100 30 18 03.0mm flangeless
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bOT17flfi
MI31T
MI31TA
MI32T
MI32TA
MI37T
MIB37T
MI38T
MIB38T
MI51T
ML309
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louver
Abstract: MU300 LUM-5122
Text: Dot matrix units Dot matrix units The LUM series of dot matrix units can be used to display any image or character. They are available in 16 x 16, 24 x 24, 16 x 32, and 24 x 48 matrices. They can display three colors, red and green and when both elements are lit, the combination is an orange color. The units are
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LUM-2563
MU301
MU302
ML304
LUM-2565
MU304
ML302
LUM-2568
louver
MU300
LUM-5122
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BOX69477
Abstract: MIB57T-J ML303B
Text: MIB57T-J INFRARED EMITTING DIODE DESCRIPTION MEB57T-J is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package, it has an very narrow radiation angle measured from the optical axis to the half power point.
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MIB57T-J
MEB57T-J
ML303B.
10\iS,
BOX69477,
100mA
175mW
BOX69477
ML303B
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BOX69477
Abstract: ML303B 100mA-1A
Text: CRO MIB57T-J INFRARED EM ITTIN G D IODE DESCRIPTION MEB57T-J is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package, it has an very narrow radiation angle measured from the optical axis to the half power point.
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MEB57T-J
M1B57T-J
ML303B.
BOX69477,
100mA
175mW
BOX69477
ML303B
100mA-1A
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ML309
Abstract: No abstract text available
Text: Infrared Emitting Diodes 2 0 Vi degree PACKAGE CASE NO. 20 20 35 35 0 3.2mm 0.69" lead 1-4 1.6 1.8 20 20 35 35 T-l standard 0 3.0mm 1-61 20 20 2.0 2.0 100 100 30 18 0 3.0mm flangeless 1-7 1-8 2.0 2.0 20 20 2.0 2.0 100 100 30 20 0 3.0mm flangeless low profile lens
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MI31T
MI31TA
MI32T
MI32TA
MI33T
MIB33T
MI38T
MIB38T
MI51T
MI51TA
ML309
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