Untitled
Abstract: No abstract text available
Text: m MÊÊk PV ML303B MICRO •= DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It feaxires high sensitivity and small junction capacitance make it possible to operate at high frequency application.
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ML303B
ML303B
150mW
ML3038
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H-90
Abstract: ML303B
Text: ML303B PIN PHOTO DIODE DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. R2.5 0.1 5.0(0.2 It feaxires high sensitivity 3.0 (0.13) 0.6(0.024) x45° « . 5(0.06) and small junction capacitance make it possible
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ML303B
100mA
150mW
H-90
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Untitled
Abstract: No abstract text available
Text: CRO ML303B PIN PHOTO DIODE DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It fea:ures high sensitivity and small junction capacitance make it possible to operate at high frequency application.
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ML303B
ML303B
Oct-98
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L303A
Abstract: DL78 L 31A MA1515 EL79D
Text: Pin Photo Diodes TYPE NO. >_p nm SENSITIVITY Id H (nA/lx) MAX TYP (mW/cm) (nA) ^on toff VR (V) TYP (ns) TYP (ns) ML303 940 50 5 30 10 50 50 ML303B 880 50 5 30 10 50 50 ML308 940 45 1 30 10 50 50 ML308A 880 45 1 30 10 50 50 PACKAGE CASE NO. Side On Type L-303a
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ML303
ML303B
ML308
ML308A
L-303a
-308C
MEL78
MEL78D
MEL79
EL79D
L303A
DL78
L 31A
MA1515
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ML3038
Abstract: ML303B
Text: MICRO PIN PHOTO DIODE DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It feaxires high sensitivity and small junction capacitance make it possible to operate at high frequency application.
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ML303B
100mA
ML3038
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BOX69477
Abstract: MIB57T-J ML303B
Text: MIB57T-J INFRARED EMITTING DIODE DESCRIPTION MEB57T-J is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package, it has an very narrow radiation angle measured from the optical axis to the half power point.
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MIB57T-J
MEB57T-J
ML303B.
10\iS,
BOX69477,
100mA
175mW
BOX69477
ML303B
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BOX69477
Abstract: ML303B 100mA-1A
Text: CRO MIB57T-J INFRARED EM ITTIN G D IODE DESCRIPTION MEB57T-J is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package, it has an very narrow radiation angle measured from the optical axis to the half power point.
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MEB57T-J
M1B57T-J
ML303B.
BOX69477,
100mA
175mW
BOX69477
ML303B
100mA-1A
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