S4 5AA
Abstract: S498 20A8 MEL79D 20A-8
Text: MEL79D NPN SILICON PHOTO-TRANSISTOR « 4 . 98 <0.196 > DESCRIPTION with 5*»4>light rejective filter epoxy package. It features ultra high illuiiination sensitivity and fast response tise. ABSOLUTE MAXIMUM RATINGS • Toi. : +/-0.3mm VCEO VECO Pd Tj Tstg Collector-Efiitter Voltage
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MEL79D
KEL79D
IC-10Ã
20a8/ca2
IL-10Ã
S4 5AA
S498
20A8
20A-8
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MEL79
Abstract: No abstract text available
Text: MEL79 NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL79 is NPN silicon planar photo transistor with 5mm clear transparent lens. It features ultra high illumination sensitivity and fast response time. ABSOLUTE MAXIMUM RATINGS 30V 5V 50mW -40 to +85°C -40 to + 10QX
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MEL79
100/tA
20mW/cm2
2354QK.
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MEL79
Abstract: 5mm npn phototransistor clear
Text: UKU NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL79 is NPN silicon planar photo transistor with 5mm clear transparent lens. It features ultra high illumination sensitivity and fast response time. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Emitter-Collector Voltage
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MEL79
500iiA
20mW/cm2
5mm npn phototransistor clear
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MAL100
Abstract: MEL12 CL138 MEL31 MEL32 transistor case To 106 FPT100 FPT100A FPT100B FPT110
Text: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30
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CL138
O-106
FPT100
O-106
FPT100A
FPT100B
FPT110
FPT110A
MAL100
MEL12
MEL31
MEL32
transistor case To 106
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MEL12
Abstract: MAL100 transistor case To 106 mel32 photo transistor CL138 FPT100B MEL11 MEL11A FPT100 FPT110
Text: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30
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CL138
O-106
FPT100
O-106
FPT100A
FPT100B
FPT110
FPT110A
MEL12
MAL100
transistor case To 106
mel32 photo transistor
MEL11
MEL11A
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MEL12
Abstract: MAL100 MEL31 MEL32 mel32 photo transistor CL138 MEL11 FPT100B FPT100 FPT100A
Text: TYPE NO. CL138 POLARITY Photo Transistor P d mW 1 C (mA) V CEO (V) MIN MAX N* 300 100 18 15 MAXIMUM RATINGS 1 I L (rrw CASE D (nA) max V CE (V) PACKAGE H (mW/cm2) V CE (V) 80 2 3 1000 5 TO-106 1-49 5 5 5 5 5 5 100 100 100 5 5 5 TO-106 1-49 NO. FPT100 FPT100A
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CL138
O-106
FPT100
FPT100A
FPT100B
FPT110
FPT110A
O-106F
FPT110B
MEL12
MAL100
MEL31
MEL32
mel32 photo transistor
MEL11
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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057-2G
1611G
1620G
1621-2G
1623G
1641G
1N4001
1N4002
1N4004
1N4005
2SA532
BC109 BC184 BC549
BC317
2SC734 Y
MS181A
BC159 8
2SC876
TTP31A
ML78M06A
BC357
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L303A
Abstract: DL78 L 31A MA1515 EL79D
Text: Pin Photo Diodes TYPE NO. >_p nm SENSITIVITY Id H (nA/lx) MAX TYP (mW/cm) (nA) ^on toff VR (V) TYP (ns) TYP (ns) ML303 940 50 5 30 10 50 50 ML303B 880 50 5 30 10 50 50 ML308 940 45 1 30 10 50 50 ML308A 880 45 1 30 10 50 50 PACKAGE CASE NO. Side On Type L-303a
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ML303
ML303B
ML308
ML308A
L-303a
-308C
MEL78
MEL78D
MEL79
EL79D
L303A
DL78
L 31A
MA1515
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Untitled
Abstract: No abstract text available
Text: Pin Photo Diodes TYPE NO. X.p nm ML303 ML308 940 940 SENSITIVITY (nA/lx) 50 25 Id H MAX (mW/cm1) (nA) 5 1 30 30 VR (V) 10 10 t«lf TYP TYP (ns) (ns) 50 50 50 50 PACKAGE CASE NO. Side On Type Black Plastic 1-77 1-78 Photo Transistor TYPE NO. MALI 00 MAH 100
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ML303
ML308
MEL78
MEL80
MEL79
MEL79D
MEL709
O-18L
O-18H
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