ML309
Abstract: M151 MI31T MI31TA MI32T MI32TA MI37T MI38T MI51T MIB37T
Text: Infrared Emitting Diodes TYPEE p A.p V f MAX 2 6 1/2 NO. nm TYP (mW) (mA) (V) (mA) MI31T MI31TA 940 880 0.5 2.8 20 20 1.6 1.8 20 20 MI32T MI32TA 940 880 0.5 2.8 20 20 1.6 1.8 MI37T MIB37T 940 940 2.0 2.0 20 20 MI38T MIB38T 940 940 2.0 2.0 MI51T M151 TA 940
|
OCR Scan
|
PDF
|
MI31T
MI31TA
MI32T
MI32TA
MI37T
MIB37T
MI38T
MIB38T
1-45a
1-45b
ML309
M151
MI51T
|
MEL82
Abstract: MI38T MIB38T MIB38T-K
Text: MI38T MIB38T MIB38T-K INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, MI38T & MIB38T are mechanically and spectrally matched to the MEL82 series photo transistor.
|
OCR Scan
|
PDF
|
MI38T
MIB38T
MIB38T-K)
MI38T
MIB38T
MEL82
MIB38T-K
|
Untitled
Abstract: No abstract text available
Text: MIB38T-K MI38T-K MI 3 8 T & MIB38T are GaAlAs infrared emitting d i o d e m olded in a flangless 3mra 0 clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, it has an narrow radiation angle m e a s u r e d from the optical axis to the half
|
OCR Scan
|
PDF
|
MIB38T
MI38T
MEL82
MI38T-K
MIB38T-K
100mA
|
MEL82
Abstract: MI38T MIB38T MIB38T-K
Text: ORO MI38T MIB38T MIB38T-K INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type Ieadframe, MI38T & MJB38T are mechanically and spectrally matched to the MEL82 series photo transistor.
|
OCR Scan
|
PDF
|
MI38T
MIB38T
MIB38T-K)
MI38T
MIB38T
MJB38T
MEL82
100mA
MIB38T-K
|
MEL82
Abstract: MI38T MIB38T MIB38T-K
Text: CRO MI38T MIB38T MIB38T-K INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, MI38T & MIB38T are mechanically and spectrally matched to the MEL82 series photo transistor.
|
OCR Scan
|
PDF
|
MI38T
MIB38T
MIB38T-K)
MI38T
MIB38T
MEB38T
MEL82
100mA
MIB38T-K
|
MEL82
Abstract: MI38T
Text: CRO MEL82 N PN SILICON PHOTO TRANSISTOR DESCRIPTION 02.97 0.117 MEL82 is NPN silicon planar photo transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. / 4*.1 • (0.16) 0.75(0.03)_ max. It features ultra high illumination
|
OCR Scan
|
PDF
|
MEL82
MI38T
20mW/cm3
100ohm
|
2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
|
OCR Scan
|
PDF
|
057-2G
1611G
1620G
1621-2G
1623G
1641G
1N4001
1N4002
1N4004
1N4005
2SA532
BC109 BC184 BC549
BC317
2SC734 Y
MS181A
BC159 8
2SC876
TTP31A
ML78M06A
BC357
|
ML309
Abstract: No abstract text available
Text: MICRO ELECTRONICS LTD SIE D • bOT17flfi GOÜ1G1S TTH ■ MEHK Infrared Emitting Diodes T -4 I-1 3 TYPE p Àp V TYP mW (mA) f MAX (V) 1 2 01/2 1 PACKAGE CASE 35 35 03.2mm 0.69" lead 1-5 20 20 35 35 T-1 standard 03.0mm 1-43 2.0 2.0 100 100 30 18 03.0mm flangeless
|
OCR Scan
|
PDF
|
bOT17flfi
MI31T
MI31TA
MI32T
MI32TA
MI37T
MIB37T
MI38T
MIB38T
MI51T
ML309
|
ML309
Abstract: No abstract text available
Text: Infrared Emitting Diodes 2 0 Vi degree PACKAGE CASE NO. 20 20 35 35 0 3.2mm 0.69" lead 1-4 1.6 1.8 20 20 35 35 T-l standard 0 3.0mm 1-61 20 20 2.0 2.0 100 100 30 18 0 3.0mm flangeless 1-7 1-8 2.0 2.0 20 20 2.0 2.0 100 100 30 20 0 3.0mm flangeless low profile lens
|
OCR Scan
|
PDF
|
MI31T
MI31TA
MI32T
MI32TA
MI33T
MIB33T
MI38T
MIB38T
MI51T
MI51TA
ML309
|
