42N15
Abstract: 079A 42N20
Text: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous
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D00D3b4
IXTH42N20,
IXTM42N20,
IXTH42N15
IXTM42N15
IXTH42N20
IXTM42N20
O-204
O-247
50-200V,
42N15
079A
42N20
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35N25
Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Text: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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IXTH35N25
IXTH35N30
IXTM35N25
IXTM35N30
35N25
35N30
800v mosfet
megamos 46 08 09 6
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ID 48 Megamos
Abstract: 35N25 IXTM35N25 ixtm35n30
Text: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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IXTH35N25
IXTM35N25
IXTH35N30
IXTM35N30
O-204
O-247
IXTH350
ID 48 Megamos
35N25
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megamos
Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4
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O-204
O-247
megamos
f g megamos
megamos 48
ID 48 Megamos
megamos 13
IXTH40N25
IXTH12N95
IXTH12N100
IXTH26N50
IXTH11N95
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a 1712 mosfet
Abstract: ixth67n10 ID 48 Megamos K 1120 megamos 46 08 09 6
Text: IDE D I X Y S CORP DIXYS MegaMOS FETs IXTH67N10, 08 IXTM67N10, 08 MAXIMUM RATINGS Sym. IXTH67N08 IXTM67N08 IXTH67N10 IXTM67N10 Unit Drain-Source Voltage 1 V d SS 80 100 Vdc Drain-Gate Voltage (RGs = 1.0MQ) (1) VDGR 80 100 Vdc Parameter Gate-Source Voltage Continuous
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IXTH67N08
IXTH67N10
IXTM67N08
IXTM67N10
IXTH67N10,
a 1712 mosfet
ID 48 Megamos
K 1120
megamos 46 08 09 6
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Untitled
Abstract: No abstract text available
Text: □ IXYS IXTH 13N110 MegaMOS FET Vd s s D25 D DS on = 1100 V* = 13 A = 0.92 Q N-Channel Enhancement Mode éi Maximum Ratings Symbol TestC onditions V DSS Td = 25°C to 150°C 1100 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 1100 V V GS Continuous ±20 V
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13N110
O-247
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Untitled
Abstract: No abstract text available
Text: nixYS MegaMOS FET IXTH/IXTM 13N80 VDSS = 800 V U =13 A ^D S on = O ' * * ß N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V * DSS Tj =25°Cto150°C 800 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 800 V VGS v GSM Continuous ±20 V Transient
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13N80
Cto150
O-247
O-204
O-204
O-247
C2-60
IXTH13NB0
IXTM13N80
C2-61
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IRFP 260 M
Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH
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67N10
75N10
42N20
50N20
35N30
40N30
12N50A
21N50
24N50
30N50
IRFP 260 M
5n100
6n80
IRFP
IXTN 36N50 C
irfp 240
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Untitled
Abstract: No abstract text available
Text: IXTH14N100 MegaMOS FET V DSS =1000 V ID25 = 14 A RDS on = 0.82 Q N-Channel Enhancement Mode Symbol Test Conditions v DSS Tj =25°Cto150°C 1000 V v D0H Tj = 25° C to 150° C; RGS= 1 Mft 1000 V VGS v GSM Continuous ±20 V Transient 130 V ^025 Tc =25°C
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IXTH14N100
Cto150
O-247
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1XTH5N100
Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
Text: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out line No mm mils IXTD67N10 IXTD75N10
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IXTD67N10
IXTD75N10
IRFC250
IXTD42N20
IXTD50N20
IXTD68N20
IRFC254
IXTD40N25
IXTD35M30
IXTD40N30
1XTH5N100
xth6n90
IRFP460 equivalent
IXTH7P50
ixth10p50
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BSC 031 N 06 NS 3
Abstract: 21N50 ixth21n50 IXTM21N50
Text: I X □ I X Y S CORP IDE D | 4t.flL,22b 000Q3S4 T 7 - 3 Y S ? | - /S ' MegaMOS FETs IXTH21N50, 45 IXTM21N50, 45 R A T IN G S Parameter Drain-Source Voltage 1 1-OMfl) (1) Gate-Source Voltage Continuous IXTH21N50 IXTM21N50 Unit Voss 450 500 Vdc Vdgr 450
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IXTH21N45
IXTH21N50
IXTM21N45
IXTM21N50
IXTH21N50,
BSC 031 N 06 NS 3
21N50
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Untitled
Abstract: No abstract text available
Text: 11 Y\. YS mma f X 1 .1 O v DSS MegaMOS FET IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V p ^D25 DS on 11 A 0.95 fì 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions V * DSS ^ V DGR VGS v GSM ' d 25 •d m PD Maximum Ratings = 25°C to 150°C
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11N80
13N80
11N80
13N80
O-204
O-247
IXTM13N80
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11n80
Abstract: No abstract text available
Text: p V DSS IXTH/IXTM 11N80 800 V IXTH / IXTM 13N80 800 V MegaMOS FET ^D25 DS on 11 A 0.95 Î2 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V 'o s s Tj = 25°C to 150°C 800 V V«, Tj = 25°C to 150°C ; Ras = 1 M£i 800 V VGS
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11N80
13N80
O-247
O-204
C2-67
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21N100
Abstract: 21N10 ixtw DIXYS IXTN21N100
Text: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ
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21N100
O-264
Cto150
OT-227
21N100
21N10
ixtw
DIXYS
IXTN21N100
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21n50
Abstract: 24n50
Text: nixYS MegaMOS FET IXTH/IXTM 21N50 IXTH/IXTM 24N50 p VDSS ^D25 500 V 500 V 21 A 24 A DS on 0.25 Q 0.23 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V„ss Tj =25°C to150°C 500 V vDQR ^ 500 V Vos VGSM Continuous ±20 V Transient ±30
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21N50
24N50
to150
O-247
T0-204A
T0-204
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C246
Abstract: IXTK33N50 C-246
Text: g ix Y s High Current MegaMOS FET IXTK33N50 V DSS D cont p DS(on) = 500 V = 33 A = 0.17 £2 N-Channel Enhancement Mode Preliminary data Symbol Test conditions vDSS Tj = 25°C to 150°C Tj = 25°C to 150°C; RGS= 1.0 Vos v QSM Maximum ratings M £i Continuous
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IXTK33N50
O-264
C2-46
1XTK33NS0
C2-47
C246
IXTK33N50
C-246
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17N55
Abstract: MOSFET 17N60 17N60 IXTM17N55 IXTH17N60
Text: IDE I X Y S CORP D I 4t>ôt>22t, 0 0 00 3M b I r - 5 ? - / r MegaMOS'“ FETs n ix Y S IXTH17N60, 55 IXTM17N60, 55 MAXIMUM RATINGS Sym. IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rg s = 1-OMfl) (1)
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IXTH17N55
IXTM17N55
IXTH17N60
IXTM17N60
O-204
O-247
IXTH17N60,
IXTM17N60,
17N55
MOSFET 17N60
17N60
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40n50
Abstract: 40n60 equivalent megamos 48 40n60 40N50A megamos IXGM40N60A ID 48 Megamos f g megamos IXGH40N60
Text: 46Ö6226 I X Y S CORP 9iP 00093 D T ~ PE I Llbflfc.5 5 h"'DD0 b a [i3""T I X Y S CORP R MegaMOS IGTs IXGH, IXGM N-Channel Very High Power Conductivity Modulated MOSIGTs PRELIMINARY INFORMATION FEATURES • • • • Very high current capability— 75
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50kHz
40n50
40n60 equivalent
megamos 48
40n60
40N50A
megamos
IXGM40N60A
ID 48 Megamos
f g megamos
IXGH40N60
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ixtn15n100
Abstract: No abstract text available
Text: MegaMOS FET IXTN15N100 v ¥ dss ^D25 P DS on = 1000 V = 15 A = 0.6 Q N-Channel Enhancement Mode 6s Symbol Maximum Ratings Test Conditions V DSS Tj = 25°C to 150°C 1000 V vDGH Tj = 25°C to 150°C; RGS = 10 kD 1000 V vas Continuous ±20 V V GSM Transient
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IXTN15N100
OT-227
000E21D
ixtn15n100
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Untitled
Abstract: No abstract text available
Text: 1IXYS I MegaMOS FET IRFP470 V DSS D cont N-Channel Enhancement Mode p DS(on) Symbol Test Conditions Maximum Ratings V DSS ^ = 25 °C to 150°C 500 V v DGR ^ = 25 °C to 150°C; RQS = 1 M il 500 V V GS V GSM Continuous ±20 V Transient ±30 V ^D25 Tc = 25 °C
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IRFP470
13onditions
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ixys ixtn 36n50
Abstract: 36N50 IXTN 36N50 C IXYS 36N50 ac motor forward reverse control ixtn36n50 IXTN 36N50
Text: IXYS_ MegaMOS FET IXTN 36N50 VDSS = 500 V U = 36A DS on — 12 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j =2 5°C to 150°C 500 V V 0GR T j = 2 5 °C to 150°C; RGS= 10ki2 500 V Vos Continuous 120 V v GSM
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36N50
10ki2
OT-227
E153432
C2-46
36N50
ixys ixtn 36n50
IXTN 36N50 C
IXYS 36N50
ac motor forward reverse control
ixtn36n50
IXTN 36N50
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35N30
Abstract: rm 1117 ixtm35n30
Text: p VDSS MegaMOS FET IXTH/IXTM 35 N30 IXTH 40 N30 IXTM 40 N30 N-Channel Enhancement Mode Symbol Test Conditions v MS Tj = 25°G to 150“ C 300 V V«, Tj = 25°C to 150°C; RGS = 1 M£i 300 V V cs Continuous ±20 V VGSM Transient ±30 V ^□25 Tc = 25CC 35
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35N30
40N30
40N30
O-247
O-204
O-204
O-247
C2-26
rm 1117
ixtm35n30
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75n08
Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos
Text: I X Y S IDE CORP D I 4böbS?b D OOG a b b T □IXYS I 't f - l Ç MegaMOS FETs IXTH75N10, 08 IXTM75N10, 08 MAXIMUM RATINGS Sym. IXTH75N08 IXTM75N08 IXTH75N10 IXTM75N10 Unit Drain-Source Voltage 1 Vd s s 80 100 Vdc Drain-Gate Voltage (Rq s = 1-OMfl) (1)
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IXTH75N08
IXTH75N10
IXTM75N08
IXTM75N10
IXTH75N10,
IXTM75N10,
0-100V,
O-247
75n08
megamos 46 08 09 6
TL 1074 CT
Mosfet K 135 To3
p 75n08
k 1120
P-Channel MOSFET 800v
f g megamos
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diode T88
Abstract: f g megamos ixys ixtn 79n20 megamos megamos 13 LD25 IXTN79N20 ixtn 79n20 79N20 425al
Text: MegaMOS FET IXTN79N20 V DSS I D25 RDS on = 200 V = 85 A = 25 m ß N-Channel Enhancement Mode OD G 1 r Ks Symbol Test Conditions V DSS TJ = VDGR VGS VGSM ¿S Maximum Ratings 200 V Tj = 25°C to 150°C; RGS = 10 k£2 200 V Continuous ±20 V T ransient ±30
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IXTN79N20
OT-227
diode T88
f g megamos
ixys ixtn 79n20
megamos
megamos 13
LD25
ixtn 79n20
79N20
425al
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