Untitled
Abstract: No abstract text available
Text: DIXYS High Power Diode Modules MDD220 IFRMS 2 x 450 A FAVM 2 x 270 A V RRM VRSM V RRM V V 900 1300 1500 1700 800 1200 1400 1600 Type MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 Symbol Test Conditions ^FRMS TVJ = T' VJM Tc = 100°C; 180° sine ^FAVM
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MDD220
220-08N1
220-12N1
220-14N1
220-16N1
4bflb22b
DDD35bM
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IXSN35N120
Abstract: No abstract text available
Text: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings
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35N120AU1
OT-227
IXSN35N120AU1
4bflb22b
IXSN35N120
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Untitled
Abstract: No abstract text available
Text: DIXYS ADVANCED TECHNICAL INFORMATION High Speed IGBT with Diode IXSH 30 N60CD1 IXSK30N60CD1 IXST 30 N60CD1 V CES I Short Circuit SOA Capability 600 V 55 A C25 V C E sat 2.5 V t fi 70 ns TO-247AD (IXSH) Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C
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N60CD1
IXSK30N60CD1
O-247AD
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10N100
Abstract: No abstract text available
Text: DIXYS Low VCE 6al IGBT High speed IGBT IXGH10N100 IXGH10N100A V y c es ^C25 v CE (sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Ae Sym bol Test Conditions Maximum Ratings V ces T, = 25“C t o 150°C 1000 V co„ ^ = 25“C to 150“C; RaE = 1 M£2 1000 V VGEs
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IXGH10N100
IXGH10N100A
O-247
10N100A
10N100A
10N100
10N100U1
10N100AU1
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ixysmosfets
Abstract: No abstract text available
Text: DIXYS Ultra-Low VCE sat IGBT vCES IXGH41N60 •c25 ^ C E (s a t) = 600 V = 76 A = 1.6 V Preliminary data Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V VCGft Tj = 25°C to 150°C; RGE = 1 MQ 600 V VGEg Continuous ±20 V VGEM Transient
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IXGH41N60
O-247
ixysmosfets
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ixys dsei 2x30-04c
Abstract: No abstract text available
Text: DSEI 2X30-04C/06C DSEI 2X31-04C/06C DIXYS Diode 2X30-04C/06C 2X31-04C/06C FRED V RSM V rrm 440V 640V 400V 600V Symbol Type DSEI 2x 30/31 -04C DSEI 2x 30/31 -06C o -l- I f DSEI2x30 Test Conditions T VJ I "^"v j M A A TVJ = 150°C t = 10 mS (50 Hz), sine t = 8.3 ms (60 Hz), sine
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2X30-04C/06C
2X31-04C/06C
DSEI2x30
00D343R
D-68623
ixys dsei 2x30-04c
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IXTK33N50
Abstract: No abstract text available
Text: DIXYS High Current MegaMOS FET IXTK 33N50 V DSS I D cont p DS(on) 500 V 33 A 0.17 Q N-Channel Enhancement Mode Preliminary data Symbol Test conditions v DSS Tj = 25°C to 150°C vDQB Tj TO-264AA Maximum ratings = 25°C to 150°C; RGS=1.0 MQ 500 V 500 V
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33N50
O-264AA
33N50
IXTK33N50
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IXGH17N100
Abstract: C5250
Text: DIXYS IGBT L0W CES IXGH 17N100 IXGH 17N100A V CE sat, High speed Symbol Test Conditions V *C E S Tj = 25°Cto 150°C VCGR T,J = 25°C to 150°C; VGES 1000 V 1000 V Maximum Ratings 1000 V 1000 V Continuous ±20 V VGEM Transient ±30 V ^C25 Tc =25°C 34 A C90
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17N100
17N100A
O-247AD
17N100A
17N100U1
IXGH17N100
C5250
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Untitled
Abstract: No abstract text available
Text: DIXYS IXSH10N60A High Speed IGBT = 600 V = 20 A = 3V VCES IC25 VCE sat Short Circuit SOA Capability TO-247 AD P re lim in a ry d a ta C (TAB) Symbol Test Conditions v* CES Tj V * CGR Maximum Ratings 600 V T, = 25°C to 150°C; RGE = 1 M ii 600 V v GES Continuous
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IXSH10N60A
O-247
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F219
Abstract: vu050 DIXYS
Text: DIXYS VUG 50 idAV = 58 A v rrm = 800-1800 V Three Phase Rectifier Bridge v RSM V r„ m V V TVPe -O AS 3 b 3 Li L + - o— 800 1200 1400 1600 1800 900 1300 1500 1700 1900 VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* . * delivery time on request
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50-08N03
50-12N03
50-14N03
50-16N03
50-18N03*
F2-19
F2-20
F219
vu050
DIXYS
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st 247
Abstract: No abstract text available
Text: DIXYS Advanced Technical Information High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 1400/1600 V 33 A 7V 30 ns CES ^C25 v CE sat t N-Channel, Enhancement Mode TO-247 AD S ym b o l T est C o n d itio n s M axim um R atings
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40N140
40N160
O-247
40N160
st 247
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70-0015B
Abstract: DIODE PH AV 20
Text: DIXYS DSSK 70-0015B Power Schottky Rectifier U av with common cathode V rrm VF 2x35 A 15V 0.33 V Preliminary Data v RSM TyPe V Vrrm V 15 15 DSSK 70-0015B TO-247 AD i I— M - r - w - i 1 I - - ! " A C A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol
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O-247
70-0015B
70-0015B
DIODE PH AV 20
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92520E
Abstract: No abstract text available
Text: DIXYS IXSN 55N120AU1 High Voltage IGBT with Diode V CES IC25 vCE sat 1200 V 110 A 4V Short Circuit SOA Capability Symbol Test Conditions VCES v CGB Tj = 25°Cto150°C Tj = 25° C to 150° C; v GES Continuous Transient v GEM IC25 'c 9 0 ' cm SSOA (RBSOA) Maximum Ratings
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55N120AU1
Cto150
OT-227
E153432
92520E
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Untitled
Abstract: No abstract text available
Text: DIXYS IXFJ 32N50Q v¥ DSS 500 V A — CO to HiPerFET Power MOSFETs — ^D cont R Q-Class DS(on) N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOS™ Family tr r 0.15 ß < 250 ns — Preliminary data sheet Maximum Ratings Symbol Test Conditions
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32N50Q
Cto150
T0-220
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Untitled
Abstract: No abstract text available
Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Q Class IXFH 32N50Q IXFT 32N50Q trr < 250 ns V DSS Tj =25°Cto150°C 500 V Vocn Tj = 25° C to 150° C; RGS= 1 M n 500 V v G5 Continuous ±20 V vGSM Transient ±30 V ^D25 Tc =25°C Kn m Test C onditions
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32N50Q
32N50Q
Cto150
O-247
O-268
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IXYs MCO
Abstract: No abstract text available
Text: DIXYS High Power Single Thyristor Module MC0450 V RRM = 2000 - 2200 V Preliminary Data V RSM V RRM V DSM v DRM V V 2100 2300 2000 2200 rbi4tf| I _I MCO 450-20io1 MCO 450-22io1 Maximum Ratings Symbol Test Conditions Itrms Itav T vj = T vjm Tc = 85°C; 180° sine
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MC0450
450-20io1
450-22io1
IXYs MCO
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Untitled
Abstract: No abstract text available
Text: DIXYS AdvancedTechnical Information P Electrically Isolated Back Surface = = — DS(on) ~ o o 00 HiPerFET Power MOSFETs IXFR 15N80Q V DSS ISOPLUS247™ Q Class ^D25 V 13 A 0.60 a trr <250 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
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15N80Q
ISOPLUS247TM
247TM
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26N80Q
Abstract: 26N80
Text: dIXYS Advanced Technical Information HiPerFET Power MOSFETs IXFH 26N50Q IXFT 26N50Q Q-Class Symbol Test Conditions Maximum Ratings VDSS Td = 25° C to 150° C 500 V Voon Tj = 25° C to 150°C; RGS= 1 MQ 500 V Vos Continuous ±20 V Transient ±30 V osm '* 5
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26N50Q
26N50Q
UL94V-0
10TransientThermal
26N80Q
26N80
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diode lt 247
Abstract: No abstract text available
Text: DIXYS HiPerFET Power MOSFETs IXFH 67N10 IXFH 75N10 VDSS ^D25 100 V 100 V 67 A 75 A V DSS Test Conditions ^ Maximum Ratings =25°C to150°C 100 V v DGR T j = 2 5 °C to 1 5 0 °C ; RGS=1 M£2 100 V Vos Continuous i2 0 V VGSM Transient d30 V ^ D25 Tc =25°C
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67N10
75N10
O-247
to150
diode lt 247
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lg tv power board
Abstract: tv lg lg tv
Text: DIXYS VT0 39 ECO-PAC Three Phase Rectifier Bridge •dAV V RRM 39 A 600-1200 V Prilim inary data VRSM VDSM VRRM VDRM V V 700 900 1300 600 800 1200 Symbol IdAV Type Ak VTO 39-06ÎO7 VTO 39-08ÍO7 VTO 39-12io7 I tavm I tsm T VJ = ¿OG -o A o II cc > 39
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39-12io7
lg tv power board
tv lg
lg tv
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35N25
Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Text: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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IXTH35N25
IXTH35N30
IXTM35N25
IXTM35N30
35N25
35N30
800v mosfet
megamos 46 08 09 6
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0504N
Abstract: No abstract text available
Text: MbâbEEb DDÜ154G GSb H I X V DIXYS K3BT with Diode IXSN50N120AU1 ^C25 V CES High Short Circuit SOA Capability CE sat = 75 A = 1200 V = 3.7 V f 3 2 Preliminary data (09/93) 4 i 1 Symbol Test Conditions VCE* Tj = 25‘C to 150'C 1200 V v « * Tj = 25'C to 150’ C; Ra = 1 M i l
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DGD154G
IXSN50N120AU1
OT-227
125-C
-125-C.
0504N
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thyristor eto
Abstract: No abstract text available
Text: DIXYS Phase Control Thyristors vR RM = 800 -1400 v RRM ^T RMS = ^ ' t (AV)M = 6 9 A V RSM VRRM v DSM V DRM V V 900 1300 1500 Type CS35-08io4 CS35-12io4 CS35-14io4 800 1200 1400 1/4"-28 UNF-2 A Symbol *T(RMS) ^T(AV)M ^TSM Test Conditions 120 63 69 A A A 10 ms (50 Hz), sine
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CS35-08io4
CS35-12io4
CS35-14io4
thyristor eto
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DIXYS
Abstract: No abstract text available
Text: DIXYS
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