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    BSC 031 N 06 NS 3

    Abstract: 21N50 ixth21n50 IXTM21N50
    Text: I X □ I X Y S CORP IDE D | 4t.flL,22b 000Q3S4 T 7 - 3 Y S ? | - /S ' MegaMOS FETs IXTH21N50, 45 IXTM21N50, 45 R A T IN G S Parameter Drain-Source Voltage 1 1-OMfl) (1) Gate-Source Voltage Continuous IXTH21N50 IXTM21N50 Unit Voss 450 500 Vdc Vdgr 450


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    IXTH21N45 IXTH21N50 IXTM21N45 IXTM21N50 IXTH21N50, BSC 031 N 06 NS 3 21N50 PDF