MLED96
Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B
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ATV5030
ATV5090B
ATV6031
ATV6060H
ATV7050
BAL99LT1
BAS16LT1
BAS21LT1
BAV70LT1
BAV74LT1
MLED96
BRX49 SCR
MRF549
ATV5030
MRF660
MRF548
mmbr2857lt1
CR2428
MPF3822
MRF548 MOTOROLA
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marking SH SOT23 mosfet
Abstract: transistor mps 2904 mdc1005 SCR T 00-350 MPS 1005
Text: Order this data sheet by M DC1005A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC1005A MDC1005BLT1 SMALLBLOCK Products MOSFET Turn-Off Device W ith Integral G ate Clamp M o to ro la p re fe rre d devices The MDC1005 series is a silicon turn-off device designed to reduce the turn-off time of a
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OCR Scan
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DC1005A/D
MDC1005
J1046F
MDC1005A
MDC1005BLT1
marking SH SOT23 mosfet
transistor mps 2904
SCR T 00-350
MPS 1005
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marking 2904
Abstract: MDC1000B MDC1000 318E-04
Text: SMALLBLOCK Products MOSFET Turn-Off Devices % 40 T his new series of M O S F E T tu rn -o ff devices offers an econom ical w ay to reduce the turn-o ff tim e of pow er M O SFETs. Additionally, they cla m p the M O S F E T gate voltage to a safe level. T h e use of a M O S F E T turn-off de vice low ers
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OCR Scan
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O-226AA)
O-236AB)
OT-23
318E-04
O-261
OT-223
O-226AA
DC1000A
MDC1005A
MDC1000
marking 2904
MDC1000B
318E-04
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MDC1000
Abstract: MDC-1000
Text: Field-Effect Transistors The data sheets on the following pages are designed to emphasize those FETs that by virtue of widespread industry use, ease of manufacture, and low relative cost, merit first con sideration for new equipment design. CAUTION: Static electricity is a surface phenomenon which most com
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OCR Scan
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MDC1000
MDC1005
OT-23
MDC-1000
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