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    MBR20020 Search Results

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    MBR20020 Price and Stock

    GeneSic Semiconductor Inc MBR20020CT

    DIODE MOD SCHOTT 20V 200A 2TOWER
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    DigiKey MBR20020CT Bulk 80
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    Mouser Electronics MBR20020CT
    • 1 -
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    • 100 $90.13
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    NAC MBR20020CT 25
    • 1 $86.14
    • 10 $86.14
    • 100 $74.65
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    GeneSic Semiconductor Inc MBR20020CTR

    DIODE MOD SCHOTT 20V 200A 2TOWER
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    DigiKey MBR20020CTR Bulk 80
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    Mouser Electronics MBR20020CTR
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    NAC MBR20020CTR 25
    • 1 $86.14
    • 10 $86.14
    • 100 $74.65
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    GeneSic Semiconductor Inc MBR200200CT

    DIODE MOD SCHOT 200V 100A 2TOWER
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    DigiKey MBR200200CT Bulk 80
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    Mouser Electronics MBR200200CT
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    Newark MBR200200CT Bulk 80
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    NAC MBR200200CT 25
    • 1 $86.14
    • 10 $86.14
    • 100 $74.65
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    GeneSic Semiconductor Inc MBR200200CTR

    DIODE MOD SCHOT 200V 100A 2TOWER
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    DigiKey MBR200200CTR Bulk 80
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    Mouser Electronics MBR200200CTR
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    Newark MBR200200CTR Bulk 80
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    NAC MBR200200CTR 25
    • 1 $86.14
    • 10 $86.14
    • 100 $74.65
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    Navitas Semiconductor MBR20020CTR

    Silicon Rectifier Module - Schottky (Rev Config) - 20V - 200A - Twin Tower
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    Onlinecomponents.com MBR20020CTR
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    Find more MBR20020 price and stock on Findchips.com

    MBR20020 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MBR20020 Micro Commercial Components 200 Amp Rectifier 20 to 100 Volts Schottky Barrier Original PDF
    MBR20020 Transys Electronics SCHOTTKY DIODES MODULE TYPE 200A Original PDF
    MBR200200CT GeneSiC Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 200V 100A 2 TOWER Original PDF
    MBR200200CTR GeneSiC Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 200V 100A 2 TOWER Original PDF
    MBR20020CT America Semiconductor HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Original PDF
    MBR20020CT GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 200A 2TOWER Original PDF
    MBR20020CT Micro Commercial Components 200 Amp Rectifier 20 to 100 Volts Schottky Barrier Original PDF
    MBR20020CT Micro Commercial Components 200 Amp Schottky Barrier Rectifier 20 Volts Original PDF
    MBR20020CT Transys Electronics SCHOTTKY DIODES MODULE TYPE 200A Original PDF
    MBR20020CT America Semiconductor MBR20020 - HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Scan PDF
    MBR20020CTL Motorola European Master Selection Guide 1986 Scan PDF
    MBR20020CTL Motorola Switchmode Datasheet Scan PDF
    MBR20020CTR America Semiconductor HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Original PDF
    MBR20020CTR GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 200A 2TOWER Original PDF
    MBR20020CTR America Semiconductor MBR20020 - HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Scan PDF

    MBR20020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT

    Untitled

    Abstract: No abstract text available
    Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 200 A Features • High Surge Capability • Types from 20 to 40 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original     		PDF MBR20020CT MBR20040CTR MBR20030CT MBR20035CT MBR20040CT

    MBR20045CT

    Abstract: MBR200100CT MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20060CT MBR20080CT
    Text: DACO SEMICONDUCTOR CO., LTD. MBR20020CT A THRU MBR200100CT(A) SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175


    Original     		PDF MBR20020CT MBR200100CT 200Amp MBR20040CT MBR20045CT MBR20080CT MBR20060CT MBR20035CT MBR20030CT

    MBR20080

    Abstract: MBR200100 MBR20020 MBR20030 MBR20035 MBR20040 MBR20045 MBR20060
    Text: Transys MBR20020 R THRU MBR200100(R) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM HALF PACKAGE G Maximum Ratings D Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175


    Original     		PDF MBR20020 MBR200100 200Amp MBR20020( MBR20030( MBR20035( MBR20040( MBR20045( MBR20060( MBR20080( MBR20080 MBR20030 MBR20035 MBR20040 MBR20045 MBR20060

    MBR200100CT

    Abstract: MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT
    Text: Transys MBR20020CT A THRU MBR200100CT(A) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175


    Original     		PDF MBR20020CT MBR200100CT 200Amp MBR20035CT MBR20030CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT

    Untitled

    Abstract: No abstract text available
    Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT 175se

    MBR200150CT(R)

    Abstract: Twin Tower
    Text: MBR200150CT R DACO SEMICONDUCTOR CO., LTD. THRU MBR200200CT(R) SCHOTTKY DIODE MODULE TYPES 200A Features 200Amp Rectifier 150-200 Volts High Surge Capability Types Up to 200V V RRM Twin Tower A Maximum Ratings R Operating Temperature: -55 C to+150 Storage Temperatur: -55 C to +150


    Original     		PDF MBR200150CT MBR200200CT 200Amp MBR200200CT MBR200150CT(R) Twin Tower

    200100CT

    Abstract: MBR20080CT-200100CT MBR20020CT-20045CT 20020-20045CT 20045CT
    Text: MCC MBR20020CT   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU MBR200100CT Features • • • • 200 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton


    Original     		PDF MBR20020CT MBR200100CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT 200100CT MBR20080CT-200100CT MBR20020CT-20045CT 20020-20045CT 20045CT

    AV200A

    Abstract: No abstract text available
    Text: MCC MBR20020 THRU MBR200100   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 200 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton


    Original     		PDF MBR20020 MBR200100 MBR20030 MBR20035 MBR20040 MBR20045 MBR20060 MBR20080 AV200A

    MBR20020CT

    Abstract: MBR20030CT MBR20035CT MBR20040CT
    Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20030CT MBR20035CT MBR20040CT

    Untitled

    Abstract: No abstract text available
    Text: MBR200150CT thru MBR200200CTR Silicon Power Schottky Diode VRRM = 150 V - 200 V IF AV = 200 A Features • High Surge Capability • Types from 150 V to 200 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original     		PDF MBR200150CT MBR200200CTR MBR200200CT

    MBR200100CT

    Abstract: MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT
    Text: MCC MBR20020CT THRU MBR200100CT Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 200 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton


    Original     		PDF MBR20020CT MBR200100CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT MBR200100CT MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT

    MBR200100

    Abstract: MBR20020 MBR20030 MBR20035 MBR20040 MBR20045 MBR20060 MBR20080
    Text: DACO SEMICONDUCTOR CO., LTD. MBR20020 R THRU MBR200100(R) SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM HALF PACKAGE G Maximum Ratings D Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175


    Original     		PDF MBR20020 MBR200100 200Amp MBR20020( MBR20030( MBR20035( MBR20040( MBR20045( MBR20060( MBR20080( MBR20030 MBR20035 MBR20040 MBR20045 MBR20060 MBR20080

    MBR20020CT

    Abstract: No abstract text available
    Text: Naina Semiconductor Ltd. MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified


    Original     		PDF MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original     		PDF ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA

    bys75-50

    Abstract: MBR20030CTL mbr6535 357B-01 MBR6545 BYS75-45 MBR20020CTL BYS75-30 MBR12035CT MBR20035CT
    Text: SCHOTTKY RECTIFIERS continued l0, AVERAGE FORWARD RECTIFIED CURRENT (A) 80 75 65 120 ^ J ' MBR20020CTL* 20 30 35 # Power Tap * D 05 VRR M »00 357B-01 Plastic 257-01 C A SE 200 MBR20030CTL* BYS75-30* MBR6535 MBR7535 MBR8035 MBR12035CT MBR20035CT MBR30035CT


    OCR Scan     		PDF 357B-01 MBR20020CTL* BYS75-30* MBR20030CTL* MBR6535 MBR7535 MBR8035 MBR12035CT MBR20035CT MBR30035CT bys75-50 MBR20030CTL mbr6535 MBR6545 BYS75-45 MBR20020CTL BYS75-30

    MBR60035CTL

    Abstract: MBR20030CTL MBR20025CTL MBR30050CT MBR20015CTL
    Text: M O T O R O L A SC D I O D E S / O P T O 3TE D B b 3 b ? 2 5 5 GGfl30D4 M • M 0 T 7 T ^ 3 -cl *Iq , A V ERA G E RECTIFIED FO RW ARD C U R REN T (Amperes) 200 300 600 3570-01 PO W ER TAP O-W-i 0+H° V r RM (Volts) 15 MBR20015CTL 20 MBR20020CTL 25 MBR20025CTL


    OCR Scan     		PDF GGfl30D4 MBR20015CTL MBR20020CTL MBR20025CTL MBR20030CTL MBR30035CT MBR60030CTL MBR60035CTL MBR30045CT MBR30050CT

    MBR20030CTL

    Abstract: MBR20025CTL R20025C
    Text: MOTOROLA SC DIODES/OPTO b3fci72SS □0flb3Lci DSb b4E D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR20015CTL MBR20020CTL MBR20025CTL MBR20030CTL POWERTAP SWITCHMODE Power R ectifiers . . using the S chottky B arrier prin ciple w ith a platin um barrier metal. These stateof-the-art devices have the fo llo w in g features:


    OCR Scan     		PDF b3fci72SS MBR20015CTL MBR20020CTL MBR20025CTL MBR20030CTL MBR20030CTL MBR20025CTL, R20025C

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF