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    Advantech Co Ltd ASMB-831T2-00A1

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    Mouser Electronics ASMB-831T2-00A1
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    Fairchild Semiconductor Corporation MB831000-15

    MB831000-15
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    Quest Components MB831000-15 59
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    Fuji Electric Co Ltd MB8316200B

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    Component Electronics, Inc MB8316200B 15
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    MB831 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MB831124-35P Fujitsu 1 M-BIT (131 ,072 x 8) CMOS Read Only Memory Scan PDF

    MB831 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GI9332

    Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
    Text: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8


    Original     		PDF MB83256 MB83512 MB831000 MB832000 MB834100 MB834000 MB834200 27C1024H 27C101A 27C301A GI9332 mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    MB831124-35

    Abstract: 831124-35 bm27c MBM27C256 MB831124
    Text: F U J IT S U MOS M em ories • M B 8 3 1 124-3 5 1M-BIT 131,072x8 CMOS Read Only Memory D e s c rip tio n The Fujitsu MB831124 is a CMOS Si-gate mask-programmable static read only memory organized as 131,072 words by 8 bits. The MB831124 has TTL-compatible I/O and 3-state output Jevel


    OCR Scan     		PDF 072x8) MB831124 28-pin MB831124-35) MB831124-35 831124-35 bm27c MBM27C256

    Untitled

    Abstract: No abstract text available
    Text: 374 9 7 6 2 T S 7 m U M IC R O E LEC T R O N IC S TWsTtW^El^rlToIlCS T8C 03599^ 7 8 “' ^ | 37M17b2 QQ03S11 8 | F U J IT S U MOS M em o ries B M B 8 3 1 1 2 4-3 5 1M-BIT 131,072x8 CMOS Read Only Memory D e s c rip tio n The Fujitsu MB831124 is a CMOS Si*gate mask-programmable


    OCR Scan     		PDF 37M17b2 QQ03S11 072x8) MB831124 28-pin 37MT7L2 G0Q3b05

    MB8316200

    Abstract: MB8316200A fujitsu 42pin D mb83 l0809
    Text: March 1993 Edition 1.0 FUJITSU DATA SHEET MB8316200A CMOS 16M-BIT MASK READ ONLY MEMORY 1M x 16 2M x 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB8316200A is a CMOS Si-gate mask-programmable static read only memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits.


    OCR Scan     		PDF MB8316200A 16M-BIT MB8316200A MB8316200 fujitsu 42pin D mb83 l0809

    MB831000

    Abstract: IC 27128 83100 mb83 MB831000-20 bm27c 831000-15 ic rom 27128
    Text: FUJITSU CMOS 1M-BIT MASK-PROGRAMMABLE READ ONLY MEMORY MB831000-15 MB831000-20 November 1987 Edition 2.0 1M-BIT 131,072x8 CMOS READ ONLY MEMORY The F u jits u M B 8 3 1 0 0 0 is a C M O S Si-gate m ask-p rog ram m able s ta tic read o n ly m e m o ry organized as 1 3 1 ,0 7 2 w o rd s b y 8 bits.


    OCR Scan     		PDF MB831000-15 MB831000-20 072x8) 03B92 MB831000-15 MB831000 IC 27128 83100 mb83 MB831000-20 bm27c 831000-15 ic rom 27128

    mb8316200

    Abstract: MB8316200B mb83 B8316200B
    Text: FUJITSU January 1994 Edition 1.0 DATA SHEET MB8316200B CMOS 16M-BIT MASK READ ONLY MEMORY 1 M x 16 2M X 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB8316200B is a CMOS Si-gat mask-programmable static read only memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits.


    OCR Scan     		PDF MB8316200B 16M-BIT MB8316200B B8316200B 48-LEAD FPT-48P-M08) F48016S-4C mb8316200 mb83

    42-pin D 1989

    Abstract: mb8316 Fujitsu 42-pin 1989 fujitsu 1988 mb83 fujitsu 42pin ic data
    Text: December 1990 Edition 1.0 FUJITSU DATA SHEET MB831620-20 CMOS 16M-BIT MASK READ ONLY MEMORY 1M x 16 2M x 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB831620 is a CMOS Si-gate mask-programmable static read only memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits.


    OCR Scan     		PDF MB831620-20 16M-BIT MB831620 42-pin D 1989 mb8316 Fujitsu 42-pin 1989 fujitsu 1988 mb83 fujitsu 42pin ic data

    MB834000

    Abstract: MB831000 mask rom MB64256 otprom MBM27C256AP MB83400 38-pin memory cards
    Text: Section 2 38-Pin Memory Cards — A ta Glance P a ge 2 -3 T e ch n o lo gy CMOS Mask ROM Device A cce ss Tim e Em b edded iC s MB98522RC 200 ns MB831000 X 1 pc 128K x 8 bits 98523RC 200 ns MB831000 X 2 pcs 256K x 8 bits 98525RC 200 ns MB831000 X 2 pcs 128K x 16 bits


    OCR Scan     		PDF 38-Pin MB98522RC 98523RC 98525RC MB98541RC MB98621RC MB98622RC MB98623RC MB9B801RC MB98802RC MB834000 MB831000 mask rom MB64256 otprom MBM27C256AP MB83400 38-pin memory cards

    MB831000

    Abstract: 831000-15 831000 MB831000-15 MB831000-20 27128 eprom ic rom 27128 IC 27128 27128 ROM 27128 memory
    Text: CMOS 1M-BIT MASK-PROGRAMMABLE READ ONLY MEMORY MB831000-15 MB831000-20 N ovem ber 1987 E d itio n 2 .0 2 1M-BIT 131,072 x 8 CMOS READ ONLY MEMORY The Fujitsu MB 831000 is a CMOS Si*gate mask-programmable static read only memory organized as 131,072 words by 8 bits.


    OCR Scan     		PDF MB831000-15 MB831000-20 B831000-20 28-LEAD DIP-28P-M02) MB831000 831000-15 831000 MB831000-20 27128 eprom ic rom 27128 IC 27128 27128 ROM 27128 memory

    MB8316200

    Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
    Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S


    OCR Scan     		PDF 23C4000C 23C4100C 23C4200C 23V4000C KM23V41 KM23V41OOCET UPD23C4001EB UPD23C4000S HN62344B HN62444 MB8316200 uPD23C4000S TC533200 UPD23C4000 23C32000a 624116 HN62318/338B

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    MBM27C256

    Abstract: MBM27C256 120 EPROM fujitsu FUJITSU MBM27128 MBM27128 MB831124 B831124-35
    Text: FUJITSU MOS Memories M B831124-35 1M-BIT 131,072x8 CMOS Read Only Memory D e s c r ip tio n The Fujitsu M B831124 is a CM O S S -g a te m ask-program m able static read only m em ory organized as 131,072 words by 8 bits. The M B831124 has TTL-com patible I/O and 3-state output level


    OCR Scan     		PDF MB831124-35 072x8) MB831124 28-pin MB831124-35) MBM27C256 MBM27C256 120 EPROM fujitsu FUJITSU MBM27128 MBM27128 B831124-35

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258


    OCR Scan     		PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference

    MB831000

    Abstract: B831000 38-pin memory cards MB83
    Text: MASK PROGRAMMABLE ROM CARD MB98522RC MB98523RC MB98525RC A p r il 1 9 8 9 E d it io n 1 .0 CMOS 1M-BIT AND 2M-BIT MASK PROGRAMMABLE READ O NLY MEMORY CARD The M 898522/523/525 are memory cards which are composed of one or two M B831000 M A S K ROM in 38-pin plastic package. These cards have T T L


    OCR Scan     		PDF B831000 38-pin B98523 B98522RC B98523RC B98525RC -38P-M MB831000 38-pin memory cards MB83