Untitled
Abstract: No abstract text available
Text: HY62V8400 Series 5 1 2 K x g bjt C M Q S SR A M »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V8400 has a data retention mode that guarantees
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HY62V8400C
HY62V8400
55/70/85/100ns
-100/120/150/200ns
45defl
10E03-11
MAY94
4b750fifi
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PP-T20
Abstract: HY5117400B bel power QBS
Text: HY5117400B Series HYUNDAI 4M X 4-bit CM O S DRAM DESCRIPTION The HY5117400B is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117400B
HY5117400B
Y5117400B
4b750fl
1AD46-00-MAY9S
GG0457E
HY5117400BJ
HY5117400BSLJ
PP-T20
bel power QBS
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 4 4 0 0 B " H Y U N D A I S e r ie s 1M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY514400B
1AC11-00-MAY94
4b75Gflfl
HY514400BJ
HY514400BU
HY514400BSU
HY514400BT
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HYM591000
Abstract: No abstract text available
Text: HYUNDAI H Y M 5 9 1 0 0 0 A SEMICONDUCTOR S e r ie s 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted
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HYM591000A
HY514400
HY531000
HYM591000AM
0177G
1BB04-20-M
0QG1771
HYM591000
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phct
Abstract: baw16 OCB-15 wpp3 gc137 mcag1 d0ji
Text: H Y 5 1 V 4 2 6 0 B S e r ie s 256K X 16-bit CMOS DRAM with 2CAS " H Y U N D A I DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve
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HY51V4260B
16-bit
400mil
40pin
40/44pin
4fci750Ã
1AC26-10-MAY95
phct
baw16
OCB-15
wpp3
gc137
mcag1
d0ji
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Untitled
Abstract: No abstract text available
Text: • HYUNDAI HYM536220A W-Series 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^Fdecoupling
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HYM536220A
36-bit
HY5118160B
HY531000A
HYM536220AW/LW
HYM536220AWG/LWG
back-14)
DQ0-DQ35)
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 1 6 4 1 0 •H Y U N D A I S e r ie s 4M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5116410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5116410 utilizes Hyundai's CMOS silicon gate process technology as well as advanced
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HY5116410
1ADO3-10-MAY94
Mb75Gflfl
HY5116410JC
HY5116410UC
HY5116410TC
HY5116410LTC
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Untitled
Abstract: No abstract text available
Text: “H Y U H DAI HY5116400B Series 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY5116400B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he HY5116400B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116400B
HY5116400B
logic300
1AD42-00-MAY95
Mb750fifi
000MS3b
HY5116400BSLJ
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Untitled
Abstract: No abstract text available
Text: « Y I I I I VI A I I U HY29F400T/B Series I I 11 f t I 4 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase Ready//Busy - Minimizes system-level power requirements - RY//BY ourput pin for detection of programming or erase cycle completion
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HY29F400T/B
48-Pin
HY29F400
16-Bit)
G-90I
T-90I,
R-90I
G-90E,
T-90E,
R-90E
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HY53C256LF
Abstract: HY53C256 HY53C256LS D0022 JRC5 mb75a
Text: HY53C256 Series •HYUNDAI 256K X 1-bit CMOS DRAM DESCRIPTION f HY53C25f l fas* dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon i!in|ra0C^ f SHH° 9y as WeH as advanced circuit techniques to provide wide operating margins to the users
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HY53C256
HY53C25f
300mil
16pin
330m7l8pTn
1aa01-20-may84
HY53C256S
HY53C256LF
HY53C256LS
D0022
JRC5
mb75a
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