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Untitled Abstract: No abstract text available Text: ♦HYUNDAI SEMICONDUCTOR HYM591000C Series 1M x 9-bit CMOS ORAM MODULE DESCRIPTION The HYM591000C is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^ mF decoupling capacitor is mounted for each DRAM.	OCR Scan	PDF	HYM591000C HY531000A HYM591000CM/CLM 1BB08-10-MAY93 1BB08-10-MAYM 1BB08-10-MAVM
HYM591000AM Abstract: bb04 HY531000 Text: •HYUNDAI SEMICONDUCTOR HYM591000A Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted	OCR Scan	PDF	HYM591000A HY514400 HY531000 HYM591000AM tWCHf31) BB04-20-M 04-20-M bb04
HYM591000 Abstract: HY531000 HYM591000M AV93 Text: HYUNDAI SEMICONDUCTOR HYM591000 Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000 is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.	OCR Scan	PDF	HYM591000 HY531000 HYM591000M 1BB02-12-MAYM 1BB02-12-MAY93 AV93
Untitled Abstract: No abstract text available Text: HYUNDAI HYM591000C Series SEMICONDUCTOR 1M x 9-blt CMOS DRAM MODULE DESCRIPTION The HYM591000C Is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.	OCR Scan	PDF	HYM591000C HY531000A 22/iF HYM591OOOCM/CLM 1BB08-10-MAYW 4b750Ã 07IV7B1
HYM591000 Abstract: No abstract text available Text: HYUNDAI H Y M 5 9 1 0 0 0 A SEMICONDUCTOR S e r ie s 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted	OCR Scan	PDF	HYM591000A HY514400 HY531000 HYM591000AM 0177G 1BB04-20-M 0QG1771 HYM591000
HYM591000M Abstract: No abstract text available Text: HY UN DA I E L E C T R O N I C S SIE D •HYUNDAI SEMICONDUCTOR • 4L>75Gfifi TS3 H H Y N K HYM591000 1MX9-Bit C MOS DRAM MODULE M 4 4 1 2 0 1 C -J A N 9 2 18 DESCRIPTION FEATURES The HYM591000M is a 1M words by 9 bits dynamic RAM module and consists of nine	OCR Scan	PDF	75Gfifi HYM591000 591000M HYM591000M HY531000J HYM591000
HYM591 Abstract: HY531000J Text: HYUNDAI 3 TE ELECTRONICS D • 4 b 7 S 0 fifl 0 0 0 0 3 *1 0 S «HYN K P ^ '^ V 'O m m M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin	OCR Scan	PDF	M431201A-APR91 HYM591000 HY531000J 22jiF HYM591000M HYM591000P HYM591000M/P-60 HYM591000M/P-70 HYM591000M/P-80 HYM591000M/P-10 HYM591
HYM591000B Abstract: No abstract text available Text: •HYUNDAI HYM591000B Series SEMICONDUCTOR 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22\|xF decoupling capacitor is	OCR Scan	PDF	HYM591000B HY514400A HY531000A HYM591000BM/BLM BB06-00-M 1BB06-00-M 1BB06-00-MAY93
HY5118160JC Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM	OCR Scan	PDF	HYM581000BM HYM591000BM SPEEp50/60/70 HY514400AJ HY514400AJX2 HY531000AJX1 HYM584000AM HYM584000DM HYM594000AM HYM594000DM HY5118160JC HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Untitled Abstract: No abstract text available Text: •HYUNDAI HYM591000B M-Series 1M x9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/uF decoupling capacitor is	OCR Scan	PDF	HYM591000B HY514400A HY531000A 22/uF HYM591000BM/BLM HYM591610M/LM 031MIN. HYM591610TM/LTM 08ffi
Untitled Abstract: No abstract text available Text: Hyundai SEM IC O N D U C TO R HYM591000 im x9-bíí cmos dram module M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin	OCR Scan	PDF	HYM591000 M431201A-APR91 HYM591000 HY531000J HYM591000M HYM591000P HYM591000M/P-60 HYM591000M/P-70 HYM591000M/P-80
HYM591000 Abstract: No abstract text available Text: HYUNDAI SEMICONDUCTOR HYM591000 Series 1M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000 is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000 in 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.22/j F decoupling capacitor is mounted for each DRAM.	OCR Scan	PDF	HYM591000 HY531000 HYM591000M 40nsffl 1BB02-12-MAY93 000175b 4b750flfl
Untitled Abstract: No abstract text available Text: •HYUNDAI SEMICONDUCTOR HYM591000B Seríes 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22\|iF decoupling capacitor is	OCR Scan	PDF	HYM591000B HY514400A HY531000A HYM591000BM/BLM BB06-00-M 1-274/-0-0ai 29MAX.