Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MAY93 Search Results

    MAY93 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HYM5361

    Abstract: HYM536100AMG hym536100
    Text: " H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 1 0 0 A S e r ie s 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100Ais a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.22 iFdecoupling


    OCR Scan     		PDF 36-bit HYM536100Ais HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG 1CC04-00-MAYW HYM536100A 1CC04-00-MAY93 HYM5361 HYM536100AMG hym536100

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM581000B Series SEMICONDUCTOR 1M x 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-brt Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.2^/F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000B HY514400A HYM581000BM/BLM 1BB0fr40-M 1BB05-00-M 1BB05-00-MAY93

    D0200

    Abstract: No abstract text available
    Text: " H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 6 1 0 S e r ie s 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581610 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM581610 HY5117100 HYM581610M/LM/TM/LTM HYM581610TM/LTM 251MAX. 1BD02-00-MA HYM581610M HYM581610LM HYM581610TM D0200

    HYM536200AM

    Abstract: HYM536200A HYM536200AM/ALM WE005 HYM536200Aibm pc 700M/ALM
    Text: •HYUNDAI SEMICONDUCTOR HYM536200A Series 2M X 36-blt CM O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode C M O S DRAM module consisting of sixteen HY514400A in 20/26 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board, 0.2^uF decoupling


    OCR Scan     		PDF HYM536200A 36-blt 36-bit HY514400A HY531000A HYM536200AM/ALM HYM536200AMG/ALMG 11CD04-00-MAY93 36200A HYM536200AM WE005 HYM536200Aibm pc 700M/ALM

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode C M O S DRAM module consisting of eight HY5116100 in 24/28 pin SO J or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM581600 HY5116100 HYM581600M/LM/TM/LTM 1BD01-00-MAY93 HYM58160 HYM581600TM/LTM 251MAX 01-00-M

    HYM591000AM

    Abstract: bb04 HY531000
    Text: •HYUNDAI SEMICONDUCTOR HYM591000A Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted


    OCR Scan     		PDF HYM591000A HY514400 HY531000 HYM591000AM tWCHf31) BB04-20-M 04-20-M bb04

    Untitled

    Abstract: No abstract text available
    Text: ‘H Y U N D A I SEMICONDUCTOR H Y M 536200 Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400 20/26 pin SOJ and eight HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^«F decoupling


    OCR Scan     		PDF 36-bit HYM536200 HY514400 HY531000 HYM536200M HYM536200MG 1CD02-20-MAY93 4b750Ã

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM591000C Series SEMICONDUCTOR 1M x 9-blt CMOS DRAM MODULE DESCRIPTION The HYM591000C Is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM591000C HY531000A 22/iF HYM591OOOCM/CLM 1BB08-10-MAYW 4b750Ã 07IV7B1

    HYM591000

    Abstract: No abstract text available
    Text: HYUNDAI H Y M 5 9 1 0 0 0 A SEMICONDUCTOR S e r ie s 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted


    OCR Scan     		PDF HYM591000A HY514400 HY531000 HYM591000AM 0177G 1BB04-20-M 0QG1771 HYM591000

    PI-38

    Abstract: No abstract text available
    Text: •HYUNDAI HYM594000B Series SEMICONDUCTOR 4M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CM O S DRAM module consisting of two HY5117400 in 24/28 pin SO J and one HY514100A in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM594000B HY5117400 HY514100A HYM594000BM/BLM 1BC0e-00 MAY93 53-BEFORE-H 1BC06-00 PI-38

    HYM532410M

    Abstract: HYM532410 HYM53241
    Text: •HYUNDAI SEMICONDUCTOR HYM532410 Series 4 M x 32-bit c m o s dram m o d u le PRELIMINARY DESCRIPTION The HYM532410 is a 4M x 32-blt Fast page mode C M O S DRAM module consisting of eight HY5117400 in 24/28 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM532410 32-bit 32-blt HY5117400 HYM53241OM/LM HYM53241OMG/LMG outp03-00-MAY93 1CE03-00-MAY93 HYM532410M HYM53241

    HYM532200AM

    Abstract: L76 H hym532200A
    Text: •HYUNDAI SEMICONDUCTOR HYM532200A Series 2M X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532200A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22ftF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM532200A 32-bit HY514400A 22ftF HYM532200AM/ALM HYM532200AMG/ALMG 1CD03-00-MAY93 HYM532200AM L76 H

    Untitled

    Abstract: No abstract text available
    Text: 7 DRAWING THIS MADE IN DRAWING THIRD 15 ANGLE UNPUBLI5HED COPYRIGHT 19 6 5 4 7 3 PROJECTION RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI ST LOC 19 AD RESERVED. 39 REV I 5 I0N5 ZONE LTR DESCRIPTION DATE K REV PER 0 G 2 1 - 0 0 4 8 - 9 9


    OCR Scan     		PDF 0G21-0048-99 0G3C-53-00 01MAY99 006MAX- 50ALE 0B50LETE UNLE55 09-FEB-00 amp35397 /home/amp35397/edmmod

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM581000 Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000 is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000 In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000 HY531000 HYM581000M 1BB01-11-MAY93 4L750afl HYM581000M 1BB01-11-M HYM581000A

    Untitled

    Abstract: No abstract text available
    Text: HY U NDAI HYM594000B Series SEMICONDUCTOR 4M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling


    OCR Scan     		PDF HYM594000B HY5117400 HY514100A HYM594000BM/BLM compa-MAY93 DD16B2 4k750flA 0Q01flfl3