Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM532410 Series 4M X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532410 is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22,«F decoupling capacitor is mounted for each DRAM.
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HYM532410
32-bit
HY5117400
HYM532410M/LM
HYM532410MG/LMG
1CE03-00-MAY93
4b750flfl
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HYM532410M
Abstract: HYM532410 HYM53241
Text: •HYUNDAI SEMICONDUCTOR HYM532410 Series 4 M x 32-bit c m o s dram m o d u le PRELIMINARY DESCRIPTION The HYM532410 is a 4M x 32-blt Fast page mode C M O S DRAM module consisting of eight HY5117400 in 24/28 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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PDF
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HYM532410
32-bit
32-blt
HY5117400
HYM53241OM/LM
HYM53241OMG/LMG
outp03-00-MAY93
1CE03-00-MAY93
HYM532410M
HYM53241
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Untitled
Abstract: No abstract text available
Text: “HYUNDAI H Y M 5 3 2 4 1 0 M - S e r ie s 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410 is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2?«F decoupling capacitor is mounted for each DRAM.
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OCR Scan
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PDF
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32-bit
HYM532410
HY5117400
HYM53241OM/LM
HYM532410MG/LMG
TTLW-I1-C033I.
03-11-M
Q0G34T3
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