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    MARKING JC MOS Search Results

    MARKING JC MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DS0026H/883 Rochester Electronics LLC DS0026 - CLOCK DRIVER, MOS - Dual marked (7800802GA) Visit Rochester Electronics LLC Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING JC MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KSM10N50CF/KSMF10N50CF 500V N-Channel MOSFET Features TO-220F TO-220 • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode


    Original     		PDF KSM10N50CF/KSMF10N50CF O-220F O-220 54TYP 00x45Â

    Untitled

    Abstract: No abstract text available
    Text: FDPF12N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 11.5 A, 700 m Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDPF12N50FT FDPF12N50FT 100nsec 200nsec

    Untitled

    Abstract: No abstract text available
    Text: FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m Features Description • RDS on = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDP12N50NZ FDPF12N50NZ

    marking dt1

    Abstract: No abstract text available
    Text: FDP51N25 / FDPF51N25 N-Channel UniFETTM MOSFET 500 V, 51 A, 60 m Features Description • RDS on = 60 m (Max.) @ VGS = 10 V, ID = 25.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDP51N25/ FDPF51N25 FDP51N25 FDPF51N25 marking dt1

    FDPF12N50T

    Abstract: mosfet driver 400v
    Text: FDP12N50 / FDPF12N50T N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 m Features Description • RDS on = 550 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDP12N50 FDPF12N50T FDPF12N50T mosfet driver 400v

    Untitled

    Abstract: No abstract text available
    Text: FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description • RDS on = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDP8N50NZ FDPF8N50NZ

    Untitled

    Abstract: No abstract text available
    Text: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.3 A, 75 m Features Description • RDS(on) = 61 m ( Typ.)@ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching


    Original     		PDF FDD850N10LD

    Untitled

    Abstract: No abstract text available
    Text: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode  100 V, 6.8 A, 160 m Features Description • RDS(on) = 124 m ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching


    Original     		PDF FDD1600N10ALZD

    fdp12n50nz

    Abstract: fdpf12n50nz
    Text: FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m Features Description • RDS on = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		PDF FDP12N50NZ FDPF12N50NZ FDPF12N50NZ

    FDPF20N50FT

    Abstract: No abstract text available
    Text: FDP20N50F / FDPF20N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 20 A, 260 m Features Description • RDS on = 210 m (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDP20N50F/ FDPF20N50FT FDP20N50F FDPF20N50FT 100nsec

    FQPF10N50CF

    Abstract: fqpf10n50
    Text: FQP10N50CF / FQPF10N50CF N-Channel QFET FRFET® MOSFET 500 V, 10 A, 610 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET


    Original     		PDF FQP10N50CF FQPF10N50CF FQPF10N50CF fqpf10n50

    Untitled

    Abstract: No abstract text available
    Text: FDP18N20F / FDPF18N20FT N-Channel UniFETTM FRFET MOSFET 200 V, 18 A, 140 m Features Description • RDS on = 120 m (Typ.) @ VGS = 10 V, ID = 9 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDP18N20F FDPF18N20FT 100nsec 200nsec

    Untitled

    Abstract: No abstract text available
    Text: FCP190N60E / FCPF190N60E N-Channel SuperFET II MOSFET 600 V, 20.6 A, 190 m Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior


    Original     		PDF FCP190N60E FCPF190N60E

    FDP7N60

    Abstract: FDP7N60NZ
    Text: FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET 600 V, 6.5 A, 1.25  Features Description • RDS on = 1.05  (Typ.) @ VGS = 10 V, ID = 3.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		PDF FDP7N60NZ FDPF7N60NZ FDPF7N60NZ FDP7N60

    FDPF12N60NZ

    Abstract: fdpf12n60 FDP12N60NZ FDP12N60 12a650
    Text: FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m Features Description • RDS on = 530 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		PDF FDP12N60NZ FDPF12N60NZ FDPF12N60NZ fdpf12n60 FDP12N60 12a650

    fdp5n50nz

    Abstract: No abstract text available
    Text: FDP5N50NZ / FDPF5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4.5 A, 1.5 Ω Features • R Description DS on = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDP5N50NZ FDPF5N50NZ FDPF5N50NZ

    fdp8n50nz

    Abstract: No abstract text available
    Text: FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description • RDS on = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		PDF FDP8N50NZ/ FDPF8N50NZ FDP8N50NZ FDPF8N50NZ

    FDPF5N60NZ

    Abstract: No abstract text available
    Text: FDP5N60NZ / FDPF5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.5 A, 2.0  Features Description • RDS on = 1.65  (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		PDF FDP5N60NZ FDPF5N60NZ FDPF5N60NZ

    Untitled

    Abstract: No abstract text available
    Text: FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description • RDS on = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		PDF FDP8N50NZ FDPF8N50NZ

    Untitled

    Abstract: No abstract text available
    Text: FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description • RDS on = 230 m (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDP20N50 FDPF20N50 FDPF20N50T

    pfv218n50

    Abstract: PV218N50 18N50V2 PV2-18N50 FQPF18N50V2 pfv218 FQPF18N50 FQP18N50V2 18N50 pfv2
    Text: FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description • 550V @TJ = 150°C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Typ. RDS on = 0.265Ω @VGS = 10 V


    Original     		PDF FQP18N50V2/FQPF18N50V2 FQP18N50V2/FQPF18N50V2 factTO-220F FQPF18N50V2 O-220F-3 FQPF18N50V2SDTU pfv218n50 PV218N50 18N50V2 PV2-18N50 pfv218 FQPF18N50 FQP18N50V2 18N50 pfv2

    Untitled

    Abstract: No abstract text available
    Text: FDPF320N06L N-Channel PowerTrench MOSFET 60V, 21A, 25m Features Description • RDS on = 20m ( Typ.)@ VGS = 10V, ID = 21A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior


    Original     		PDF FDPF320N06L FDPF320N06L O-220F

    FDPF*10N60NZ

    Abstract: FDPF10N60NZ FDP10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power
    Text: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP10N60NZ FDPF10N60NZ FDPF*10N60NZ FDPF10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power

    rubber foot test spec

    Abstract: PHS-016-4025-BLK
    Text: REVISIONS @SPC DCP # TECH NOLOGY 1199 DOC. NO. SPC-F004 REV DESCRIPTION B Marking removed, spec revised C Renamed -w a s P H S -0 * * -* * * * -B L K DRAWN * Effective: 7 /8 /0 2 * DCP No: 1398 DATE CHECKD DATE JAP 2 /1 9 /9 2 JC 2 /1 9 /9 2 APPRVD JC 2 /1 9 /9 2


    OCR Scan     		PDF SPC-F004 rubber foot test spec PHS-016-4025-BLK