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    FDD850N10LD Price and Stock

    onsemi FDD850N10LD

    MOSFET N-CH 100V 15.3A TO252-4L
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    FDD850N10LD Digi-Reel 1
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    FDD850N10LD Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD850N10LD Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15.3A DPAK Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.3 A, 75 mΩ Features Description • RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior


    Original     		PDF FDD850N10LD

    Untitled

    Abstract: No abstract text available
    Text: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.3 A, 75 m Features Description • RDS(on) = 61 m ( Typ.)@ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching


    Original     		PDF FDD850N10LD

    Untitled

    Abstract: No abstract text available
    Text: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.7 A, 75 mΩ Features Description • RDS(on) = 61 mΩ ( Typ.)@ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching


    Original     		PDF FDD850N10LD