Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PFV218N50 Search Results

    PFV218N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pfv218n50

    Abstract: PV218N50 pfv2 FQPF18N50V2 FQP18N50V2 BIR-H0033A FQPF18N50 PV2-18N50
    Text: FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description • 550V @TJ = 150°C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Typ. RDS on = 0.265Ω @VGS = 10 V


    Original     		PDF FQP18N50V2/FQPF18N50V2 FQP18N50V2/FQPF18N50V2 pfv218n50 PV218N50 pfv2 FQPF18N50V2 FQP18N50V2 BIR-H0033A FQPF18N50 PV2-18N50

    pfv218n50

    Abstract: PV218N50 18N50V2 PV2-18N50 FQPF18N50V2 pfv218 FQPF18N50 FQP18N50V2 18N50 pfv2
    Text: FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description • 550V @TJ = 150°C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Typ. RDS on = 0.265Ω @VGS = 10 V


    Original     		PDF FQP18N50V2/FQPF18N50V2 FQP18N50V2/FQPF18N50V2 factTO-220F FQPF18N50V2 O-220F-3 FQPF18N50V2SDTU pfv218n50 PV218N50 18N50V2 PV2-18N50 pfv218 FQPF18N50 FQP18N50V2 18N50 pfv2

    pfv218n50

    Abstract: PV218N50 PV2-18N50 isd 2530
    Text: FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description • 550V @TJ = 150°C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Typ. RDS on = 0.265Ω @VGS = 10 V


    Original     		PDF FQP18N50V2/FQPF18N50V2 FQP18N50V2/FQPF18N50V2 pfv218n50 PV218N50 PV2-18N50 isd 2530