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    LP SDRAM SOLUTION Search Results

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    RZ/A1H-High-Resolution-Embedded-GUI-Solution-Kit Renesas Electronics Corporation High Resolution Embedded GUI Solution Kit for RZ/A1H Visit Renesas Electronics Corporation

    LP SDRAM SOLUTION Datasheets Context Search

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    ddr 3 tsop

    Abstract: TSOP 56 LAYOUT TSOP 66 Package
    Text: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 DESCRIPTION: The 128 Megabit LP-StackTM module DPDD16MX8RSBY5, based on 64 Mbit devices, has been designed to fit the same footprint as the 8 Meg x 8 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or


    Original     		PDF DPDD16MX8RSBY5 DPDD16MX8RSBY5, A0-A11 30A223-10 53A001-00 ddr 3 tsop TSOP 56 LAYOUT TSOP 66 Package

    udqs

    Abstract: No abstract text available
    Text: 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 ADVANCED INFORMATION DESCRIPTION: The 512 Megabit LP-Stack modules DPDD32MX16WSCY5, based on 256 Megabit devices, has been designed to fit in the same footprint as the 16 Meg x 16 DDR SDRAM TSOP monolithic. This allows for


    Original     		PDF DPDD32MX16WSCY5 DPDD32MX16WSCY5, 53A001-00 30A249-00 udqs

    Untitled

    Abstract: No abstract text available
    Text: 512 Megabit CMOS DDR SDRAM DPDD64MX8WSBY5 DESCRIPTION: The 512 Megabit LP-StackTM module DPDD64MX8WSBY5, based on 256 Mbit devices, has been designed to fit the same footprint as the 32 Meg x 8 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or


    Original     		PDF DPDD64MX8WSBY5 DPDD64MX8WSBY5, 53A001-00 30A249-00

    Untitled

    Abstract: No abstract text available
    Text: 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 PIN-OUT DIAGRAM DESCRIPTION: The 256 Megabit LP-Stack modules DPDD16MX16TSBY5, based on 128 Megabit devices, has been designed to fit in the same footprint as the 16 Meg x 8 DDR SDRAM TSOP monolithic. This allows for


    Original     		PDF DPDD16MX16TSBY5 A10/AP 53A001-00 30A245-00

    TSOP 56 LAYOUT

    Abstract: TSOP 48 LAYOUT Dense-Pac Microsystems dm 0256
    Text: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSAY5 DESCRIPTION: The 128 Megabit LP-StackTM module DPDD16MX8RSAY5, based on 64 Mbit devices, has been designed to fit the same footprint as the 16 Meg x 4 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or


    Original     		PDF DPDD16MX8RSAY5 DPDD16MX8RSAY5, A0-A11 30A223-00 16Mx4 53A001-00 TSOP 56 LAYOUT TSOP 48 LAYOUT Dense-Pac Microsystems dm 0256

    ipc 502

    Abstract: DPSD64ME8WKY5
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Synchronous SDRAM DPSD64ME8WKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb


    Original     		PDF DPSD64ME8WKY5 256Mb 256Mb IPC-A-610, 30A226-11 ipc 502 DPSD64ME8WKY5

    DPSD32ME8TKY5

    Abstract: SD32M
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous SDRAM DPSD32ME8TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb


    Original     		PDF DPSD32ME8TKY5 128Mb IPC-A-610, 128Mb 30A226-01 DPSD32ME8TKY5 SD32M

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous SDRAM DPSD32ME8TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb


    Original     		PDF DPSD32ME8TKY5 128Mb 256Mb 128Mb 53A001-00. 30A226-01

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb


    Original     		PDF DPSD128MX4WNY5 256Mb 512Mb DPSD128MX4WNY5, 512Mb 256Mb 53A001-00. 30A215-01

    DPSD128MX4WNY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb


    Original     		PDF DPSD128MX4WNY5 256Mb 256Mb 30A215-01 DPSD128MX4WNY5

    30A215-01

    Abstract: DP 6 W
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb


    Original     		PDF DPSD128MX4WNY5 256Mb 512Mb 30A215-01 DP 6 W

    LP SDRAM solution

    Abstract: LP2995
    Text: National News LP2995 February 2002 www.national.com/pf/LP/LP2995.html Introducing the World’s Smallest DDR SDRAM Termination Regulator Typical Application Circuit LP2995 VDDQ = 2.5V VDDQ VREF VDD = 2.5V AVIN VSENSE PVIN VTT 22 µF + GND + VREF = 1.25V VTT = 1.25V


    Original     		PDF LP2995 com/pf/LP/LP2995 LP2995 LLP-16 LLP-16 LP SDRAM solution

    Dense-Pac Microsystems

    Abstract: Megabit SDRAM Drawing
    Text: 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory devices. The 512 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and


    Original     		PDF DPDD32MX16WSCY5 DPDD32MX16WSCY5, 30A246-00 Dense-Pac Microsystems Megabit SDRAM Drawing

    sdram 4 bank 4096 16

    Abstract: SDRAM Drawing
    Text: 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory devices. The 256 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and


    Original     		PDF DPDD16MX16TSBY5 DPDD16MX16TSBY5, 30A245-00 sdram 4 bank 4096 16 SDRAM Drawing

    TSOP 66 Package

    Abstract: sdram 4 bank 4096 16
    Text: 512 Megabit CMOS DDR SDRAM DPDD128MX4WSAY5 ADVANCED INFORMATION DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The 256 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP


    Original     		PDF DPDD128MX4WSAY5 DPDD128MX4WSAY5, 53A001-00 30A235-00 TSOP 66 Package sdram 4 bank 4096 16

    ddr pin out

    Abstract: Dense-Pac Microsystems 66 pin tsop package sdram 4 bank 4096 16
    Text: 256 Megabit CMOS DDR SDRAM DPDD64MX4TSAY5 PRELIMINARY DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The 256 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The


    Original     		PDF DPDD64MX4TSAY5 DPDD64MX4TSAY5, 30A234-00 ddr pin out Dense-Pac Microsystems 66 pin tsop package sdram 4 bank 4096 16

    DPSD8MX32TY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD8MX32TY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the space saving LP-Stack™ TSOP


    Original     		PDF DPSD8MX32TY5 IPC-A-610 53A001-00 80-Pin 30A225-12 DPSD8MX32TY5

    Untitled

    Abstract: No abstract text available
    Text: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The LP-StackTM series is a family of interchangeable memory devices. The 128 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The


    Original     		PDF DPDD16MX8RSBY5 DPDD16MX8RSBY5, 53A001-00 30A223-10

    DPSD128ME8XKY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD128ME8XKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gigabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb


    Original     		PDF DPSD128ME8XKY5 512Mb 512Mb IPC-A-610, 30A226-21 DPSD128ME8XKY5

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD128ME8XKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gigabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb


    Original     		PDF DPSD128ME8XKY5 512Mb 512Mb 30A226-21

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Synchronous DRAM DPSD64ME8WKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb


    Original     		PDF DPSD64ME8WKY5 256Mb 512Mb DPSD64ME8WKY5, 53A001-00. 30A226-11

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD16MX16TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb 16M x 8


    Original     		PDF DPSD16MX16TKY5 128Mb 256Mb 128Mb x001-00. 30A232-12

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 512 Megabit CMOS DDR SDRAM DPDD128MX4WSÄY5 MICROSYSTEMS ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory devices. The256M egabit Double Data Rale Synchronous DRAM isam em ber o fth isfam ilyw h ich utilizesthenew and innovative space savingTSOP


    OCR Scan     		PDF DPDD128MX4WSÃ The256Megabit D128M 125MHz) 100MHz) 53A001-00 30A235-00

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 128 Megabit C M O S D D R SDRAM DPDD32MX4RLAY5 DPDD32MX4RSÍW5 ADVANCED INFORMATION DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The128M egabit Double Data Rale Synchronous DRAM isam em ber ofth isfam ilyw h ich utilizesthenew and innovative space savingTSOP


    OCR Scan     		PDF DPDD32MX4RLAY5 The128Megabit DPDD32MX4RLAY5/ DPDD32MX4RSAY5, 64Mbit 00MHz) 53A001-00 30A222-00