ddr 3 tsop
Abstract: TSOP 56 LAYOUT TSOP 66 Package
Text: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 DESCRIPTION: The 128 Megabit LP-StackTM module DPDD16MX8RSBY5, based on 64 Mbit devices, has been designed to fit the same footprint as the 8 Meg x 8 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or
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DPDD16MX8RSBY5
DPDD16MX8RSBY5,
A0-A11
30A223-10
53A001-00
ddr 3 tsop
TSOP 56 LAYOUT
TSOP 66 Package
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udqs
Abstract: No abstract text available
Text: 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 ADVANCED INFORMATION DESCRIPTION: The 512 Megabit LP-Stack modules DPDD32MX16WSCY5, based on 256 Megabit devices, has been designed to fit in the same footprint as the 16 Meg x 16 DDR SDRAM TSOP monolithic. This allows for
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DPDD32MX16WSCY5
DPDD32MX16WSCY5,
53A001-00
30A249-00
udqs
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Untitled
Abstract: No abstract text available
Text: 512 Megabit CMOS DDR SDRAM DPDD64MX8WSBY5 DESCRIPTION: The 512 Megabit LP-StackTM module DPDD64MX8WSBY5, based on 256 Mbit devices, has been designed to fit the same footprint as the 32 Meg x 8 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or
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DPDD64MX8WSBY5
DPDD64MX8WSBY5,
53A001-00
30A249-00
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Untitled
Abstract: No abstract text available
Text: 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 PIN-OUT DIAGRAM DESCRIPTION: The 256 Megabit LP-Stack modules DPDD16MX16TSBY5, based on 128 Megabit devices, has been designed to fit in the same footprint as the 16 Meg x 8 DDR SDRAM TSOP monolithic. This allows for
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DPDD16MX16TSBY5
A10/AP
53A001-00
30A245-00
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TSOP 56 LAYOUT
Abstract: TSOP 48 LAYOUT Dense-Pac Microsystems dm 0256
Text: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSAY5 DESCRIPTION: The 128 Megabit LP-StackTM module DPDD16MX8RSAY5, based on 64 Mbit devices, has been designed to fit the same footprint as the 16 Meg x 4 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or
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DPDD16MX8RSAY5
DPDD16MX8RSAY5,
A0-A11
30A223-00
16Mx4
53A001-00
TSOP 56 LAYOUT
TSOP 48 LAYOUT
Dense-Pac Microsystems
dm 0256
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ipc 502
Abstract: DPSD64ME8WKY5
Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Synchronous SDRAM DPSD64ME8WKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb
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DPSD64ME8WKY5
256Mb
256Mb
IPC-A-610,
30A226-11
ipc 502
DPSD64ME8WKY5
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DPSD32ME8TKY5
Abstract: SD32M
Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous SDRAM DPSD32ME8TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb
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DPSD32ME8TKY5
128Mb
IPC-A-610,
128Mb
30A226-01
DPSD32ME8TKY5
SD32M
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Untitled
Abstract: No abstract text available
Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous SDRAM DPSD32ME8TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb
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DPSD32ME8TKY5
128Mb
256Mb
128Mb
53A001-00.
30A226-01
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Untitled
Abstract: No abstract text available
Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb
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DPSD128MX4WNY5
256Mb
512Mb
DPSD128MX4WNY5,
512Mb
256Mb
53A001-00.
30A215-01
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DPSD128MX4WNY5
Abstract: No abstract text available
Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb
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DPSD128MX4WNY5
256Mb
256Mb
30A215-01
DPSD128MX4WNY5
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30A215-01
Abstract: DP 6 W
Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb
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DPSD128MX4WNY5
256Mb
512Mb
30A215-01
DP 6 W
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LP SDRAM solution
Abstract: LP2995
Text: National News LP2995 February 2002 www.national.com/pf/LP/LP2995.html Introducing the World’s Smallest DDR SDRAM Termination Regulator Typical Application Circuit LP2995 VDDQ = 2.5V VDDQ VREF VDD = 2.5V AVIN VSENSE PVIN VTT 22 µF + GND + VREF = 1.25V VTT = 1.25V
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LP2995
com/pf/LP/LP2995
LP2995
LLP-16
LLP-16
LP SDRAM solution
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Dense-Pac Microsystems
Abstract: Megabit SDRAM Drawing
Text: 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory devices. The 512 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and
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DPDD32MX16WSCY5
DPDD32MX16WSCY5,
30A246-00
Dense-Pac Microsystems
Megabit
SDRAM Drawing
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sdram 4 bank 4096 16
Abstract: SDRAM Drawing
Text: 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory devices. The 256 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and
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DPDD16MX16TSBY5
DPDD16MX16TSBY5,
30A245-00
sdram 4 bank 4096 16
SDRAM Drawing
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TSOP 66 Package
Abstract: sdram 4 bank 4096 16
Text: 512 Megabit CMOS DDR SDRAM DPDD128MX4WSAY5 ADVANCED INFORMATION DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The 256 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP
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DPDD128MX4WSAY5
DPDD128MX4WSAY5,
53A001-00
30A235-00
TSOP 66 Package
sdram 4 bank 4096 16
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ddr pin out
Abstract: Dense-Pac Microsystems 66 pin tsop package sdram 4 bank 4096 16
Text: 256 Megabit CMOS DDR SDRAM DPDD64MX4TSAY5 PRELIMINARY DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The 256 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The
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DPDD64MX4TSAY5
DPDD64MX4TSAY5,
30A234-00
ddr pin out
Dense-Pac Microsystems
66 pin tsop package
sdram 4 bank 4096 16
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DPSD8MX32TY5
Abstract: No abstract text available
Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD8MX32TY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the space saving LP-Stack™ TSOP
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DPSD8MX32TY5
IPC-A-610
53A001-00
80-Pin
30A225-12
DPSD8MX32TY5
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Untitled
Abstract: No abstract text available
Text: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The LP-StackTM series is a family of interchangeable memory devices. The 128 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The
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DPDD16MX8RSBY5
DPDD16MX8RSBY5,
53A001-00
30A223-10
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DPSD128ME8XKY5
Abstract: No abstract text available
Text: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD128ME8XKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gigabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb
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DPSD128ME8XKY5
512Mb
512Mb
IPC-A-610,
30A226-21
DPSD128ME8XKY5
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Untitled
Abstract: No abstract text available
Text: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD128ME8XKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gigabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb
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DPSD128ME8XKY5
512Mb
512Mb
30A226-21
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Untitled
Abstract: No abstract text available
Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Synchronous DRAM DPSD64ME8WKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb
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DPSD64ME8WKY5
256Mb
512Mb
DPSD64ME8WKY5,
53A001-00.
30A226-11
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Untitled
Abstract: No abstract text available
Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD16MX16TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb 16M x 8
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DPSD16MX16TKY5
128Mb
256Mb
128Mb
x001-00.
30A232-12
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 512 Megabit CMOS DDR SDRAM DPDD128MX4WSÄY5 MICROSYSTEMS ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory devices. The256M egabit Double Data Rale Synchronous DRAM isam em ber o fth isfam ilyw h ich utilizesthenew and innovative space savingTSOP
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OCR Scan
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DPDD128MX4WSÃ
The256Megabit
D128M
125MHz)
100MHz)
53A001-00
30A235-00
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS 128 Megabit C M O S D D R SDRAM DPDD32MX4RLAY5 DPDD32MX4RSÍW5 ADVANCED INFORMATION DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The128M egabit Double Data Rale Synchronous DRAM isam em ber ofth isfam ilyw h ich utilizesthenew and innovative space savingTSOP
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DPDD32MX4RLAY5
The128Megabit
DPDD32MX4RLAY5/
DPDD32MX4RSAY5,
64Mbit
00MHz)
53A001-00
30A222-00
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