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    MEGABIT Search Results

    MEGABIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    8M624S40CB Renesas Electronics Corporation 64KX16 MEGABIT STATIC RAM Visit Renesas Electronics Corporation
    7M624S45CB Renesas Electronics Corporation 64KX16 MEGABIT RAM MODULE Visit Renesas Electronics Corporation
    8M624S35C Renesas Electronics Corporation 64KX16 MEGABIT STATIC RAM Visit Renesas Electronics Corporation
    8M624S35CB Renesas Electronics Corporation 64KX16 MEGABIT STATIC RAM Visit Renesas Electronics Corporation
    8M624S60CB Renesas Electronics Corporation 64KX16 MEGABIT STATIC RAM Visit Renesas Electronics Corporation
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    MEGABIT Price and Stock

    HARTING Technology Group 09140083116

    Heavy Duty Power Connectors Han MegaBit contact- F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 09140083116 Each 187 1
    • 1 $28.79
    • 10 $25.47
    • 100 $25.47
    • 1000 $25.47
    • 10000 $25.47
    Buy Now

    HARTING Technology Group 09140083117

    Heavy Duty Power Connectors Han MegaBit contact- F shield connection
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 09140083117 Each 103 1
    • 1 $31.25
    • 10 $27.85
    • 100 $26.74
    • 1000 $26.74
    • 10000 $26.74
    Buy Now

    HARTING Technology Group 09140083016

    Heavy Duty Power Connectors Han MegaBit contact- M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 09140083016 Each 42 1
    • 1 $29.44
    • 10 $27.84
    • 100 $26.76
    • 1000 $26.76
    • 10000 $26.76
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    HARTING Technology Group 09140083017

    Heavy Duty Power Connectors Han MegaBit contact- M shield connection
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 09140083017 Each 15 1
    • 1 $32.39
    • 10 $30.85
    • 100 $29.07
    • 1000 $28.5
    • 10000 $28.5
    Buy Now

    HARTING Technology Group 09140083141

    Heavy Duty Power Connectors Han MegaBit Female Insert for connecting to pcb adapter
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 09140083141 Each 10 2
    • 1 -
    • 10 $35.06
    • 100 $31.39
    • 1000 $29.8
    • 10000 $29.8
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    MEGABIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AM29F016D-120

    Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
    Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm


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    PDF Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13

    Untitled

    Abstract: No abstract text available
    Text: PDM31034 PRELIMINARY 1 Megabit 3.3V Static RAM 128K x 8-Bit Revolutionary Pinout Description Features n High-speed access times Com’l: 9, 10, 12, 15 and 20 ns Ind’l.: 12, 15 and 20 ns Automotive: 15 and 20 ns n Low power operation typical - PDM31034SA


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    PDF PDM31034 PDM31034 PDM31034SA 32-pin 128Kx8)

    NS41024S55

    Abstract: NS41024S55E-SMD PDM41024W
    Text: MICROCIRCUIT DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MDNS41024S55-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S55 is a high performance, standard power version CMOS static RAM organized as


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    PDF MDNS41024S55-X NS41024S55 NS41024 NS41024S55 NS41024S55E-SMD PDM41024W 5962-8959834MMA MIL-STD-883, MIL-STD-88341024 NS4A024 NS41024S55E-SMD PDM41024W

    NS41024S35

    Abstract: PDM41024W
    Text: MILITARY DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MNNS41024S35-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S35 is a high performance, standard power version CMOS static RAM organized as


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    PDF MNNS41024S35-X NS41024S35 NS41024 NS41024S35 NS41024S35E/883 PDM41024W MIL-STD-883, NS4A024 NS4R024 PDM41024W

    am29f400bb

    Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
    Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements


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    PDF Am29F400B 8-Bit/256 16-Bit) Am29F400 am29f400bb am29f400bb v am29f400 known good AM29F400B7 20185 AM29F400BT

    NS41024S25

    Abstract: NS41024S25E-SMD PDM41024W 5962-8959837MMA
    Text: MICROCIRCUIT DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MDNS41024S25-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S25 is a high performance, standard power version CMOS static RAM organized as


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    PDF MDNS41024S25-X NS41024S25 NS41024 NS41024S25 NS41024S25E-SMD PDM41024W 5962-8959837MMA MIL-STD-883, MIL-STD-88341024 NS4A024 NS41024S25E-SMD PDM41024W 5962-8959837MMA

    NS41024S45

    Abstract: NS41024S45E-SMD PDM41024W
    Text: MICROCIRCUIT DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MDNS41024S45-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S45 is a high performance, standard power version CMOS static RAM organized as


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    PDF MDNS41024S45-X NS41024S45 NS41024 NS41024S45 NS41024S45E-SMD PDM41024W 5962-8959835MMA MIL-STD-883, MI41024 NS4A024 NS41024S45E-SMD PDM41024W

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


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    PDF Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM

    XM28C010P

    Abstract: No abstract text available
    Text: XM28C010P 1 Megabit Puma Module 32K x 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array • High Reliability —Endurance: 100,000 Cycles —Data Retention: 100 Years FEATURES • High Speed, High Density Memory Module —150ns, 120ns, 90ns and 70ns Access Times


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    PDF XM28C010P --150ns, 120ns, Size--64 XM28C010P

    NS41024S45

    Abstract: PDM41024W
    Text: MILITARY DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MNNS41024S45-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S45 is a high performance, standard power version CMOS static RAM organized as


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    PDF MNNS41024S45-X NS41024S45 NS41024 NS41024S45 NS41024S45E/883 PDM41024W MIL-STD-883, NS4A024 NS4R024 PDM41024W

    A22 SMD CODE

    Abstract: A22 SMD MARKING CODE AM30LV0064DJ40
    Text: Am30LV0064D 64 Megabit 8 M x 8-Bit CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read, erase, and program operations — Separate VCCQ for 5 volt I/O tolerance


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    PDF Am30LV0064D A22 SMD CODE A22 SMD MARKING CODE AM30LV0064DJ40

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    PDF S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032

    NS41024L45

    Abstract: PDM41024W
    Text: MILITARY DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MNNS41024L45-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024L45 is a high performance, low power version CMOS static RAM organized as 131,072 X


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    PDF MNNS41024L45-X NS41024L45 NS41024 NS41024L45 NS41024L45E/883 PDM41024W MIL-STD-883, NS4A024 NS4R024 PDM41024W

    NS41024L17

    Abstract: PDM41024W
    Text: MILITARY DATA SHEET Original Creation Date: 11/27/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/27/95 MNNS41024L17-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024L17 is a high performance, low power version CMOS static RAM organized as 131,072 X


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    PDF MNNS41024L17-X NS41024L17 NS41024 NS41024L17 NS41024L17E/883 PDM41024W MIL-STD-883, NS4A024 NS4R024 PDM41024W

    AM28F020

    Abstract: No abstract text available
    Text: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current


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    PDF Am28F020 32-pin

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    Memory

    Abstract: FTS8L32512V
    Text: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.


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    PDF FTS8L32512V 512Kx32 FTS8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 512Kx8, FTI8K32512V Memory

    W49F020T

    Abstract: W49F020
    Text: W49F020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase operations with


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    PDF W49F020 W49F020 12-volt t21-62365999 W49F020T

    1664t

    Abstract: AT52BR1662T AT52BR1664T tba 790
    Text: Features • 16-megabit x16 Flash and 2-megabit/4-megabit SRAM • 2.7V to 3.3V Operating Voltage • Low Operating Power – 40 mA Operating Current (Maximum) – 50 µA Standby Current (Maximum) • Industrial Temperature Range Flash • 2.7V to 3.3V Read/Write


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    PDF 16-megabit 11/01/xM 1664t AT52BR1662T AT52BR1664T tba 790

    27A6

    Abstract: No abstract text available
    Text: TMS28F210 1048576-BIT FLASH MEMORY I SMJS210B - DECEMBER 1892 - REVISED JUNE 1995 N PACKAGE TOP VIE W Pin Compatible With Existing 1-Megabit EPROMs All Inputs/Outputs TTL Compatible Vcc Tolerance ±10% Maximum Access/Minimum Cycle Time ’28F210-10 100 ns


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    PDF TMS28F210 1048576-BIT 28F210-10 28F210-12 28F210-15 28F210-17 168-Hour 1048576-bit, 0020h 27A6

    27LV010A

    Abstract: No abstract text available
    Text: TMS27LV010A1 048 576-BIT UV ERASABLE LOW VOLTAGE PROGRAMMABLE ROM TMS27LV010A1 048 576-BIT LOW VOLTAGE ONE-TIME PROGRAMMABLE ROM SMLS113-DECEMBER 1992 x 8 J AND N PACKAGESt TOP VIEW Single 3.3-V Power Supply Operationally Compatible With Existing 1-Megabit EPROMs


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    PDF TMS27LV010A1 576-BIT SMLS113-DECEMBER 32-Pin 32-Lead 27LV010A-20 27LV010A-25 27LV010A

    Untitled

    Abstract: No abstract text available
    Text: SMJ27C210 1 048576-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SM G S028A — MARCH 19B8 — REVISED N O VEM BER 1990 J Package Top View Single 5-V Power Supply Operationally Compatible With Existing Megabit EPROMs 40-Pln Dual-In-line Package All Inputs and Outputs Fully TTL


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    PDF SMJ27C210 048576-BIT S028A 40-Pln SMJ27C210-12 SMJ27C210-15 SMJ27C210-17 SMJ27C210-20 SMJ27C210-25

    Untitled

    Abstract: No abstract text available
    Text: 4*ìE T> Sabf l MSb 000E073 174 _ I MMHS MATRA M H S January 1991 Preliminary M 65M748 HI-REL DATA SHEET 256 k x 8 SRAM MODULE FEATURES • HIGH DENSITY 2 MEGABIT SRAM MODULE ASYNCHRONOUS ■ MILITARY ACCESS TIME : 35*/45/55 ns 5 VOLT OPERATION ■ LOW POWER CONSUMPTION


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    PDF 000E073 65M748

    Untitled

    Abstract: No abstract text available
    Text: MTE » Preliminary • SñbñMSb DDG2Q61 EMG IfilMl llllr iilll MATRA ■ M H S _ T - ^ January 1991 N H S M 65M724 HI-REL DATA SHEET 128 k X 8 SRAM MODULE FEATURES . . . HIGH DENSITY 2 MEGABIT SRAM MODULE MILITARY ACCESS TIME; 35*/45/55 ns LOW POWER CONSUMPTION


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    PDF DDG2Q61 65M724 65M724