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    Nexperia PESD24VS4UD-QX

    ESD Protection Diodes / TVS Diodes PESD24VS4UD-Q/SOT457/SC-74
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PESD24VS4UD-QX Reel 9,000
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    Nexperia PESD3V3S5UD-QX

    ESD Protection Diodes / TVS Diodes DIODE-ESD SOT457/SC-74
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PESD3V3S5UD-QX Reel 6,000
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    Nexperia PESD12VS5UD-QX

    ESD Protection Diodes / TVS Diodes PESD12VS5UD-Q/SOT457/SC-74
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    TTI PESD12VS5UD-QX Reel 6,000
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    Nexperia PESD24VS5UD-QX

    ESD Protection Diodes / TVS Diodes DIODE-ESD SOT457/SC-74
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PESD24VS5UD-QX Reel 6,000
    • 1 -
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    Nexperia PESD3V3S4UD-QX

    ESD Protection Diodes / TVS Diodes PESD3V3S4UD-Q/SOT457/SC-74
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PESD3V3S4UD-QX Reel 9,000
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    UDQS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    samsung ddr3

    Abstract: udqs ddr3 datasheet DDR3 guide ddr3 samsung DDR3 SDRAM VSS ddr3 udqs samsung ddr3 2010
    Text: Rev. 1.0 Feb. 2010 Samsung DDR2 & DDR3 Datasheet Guide Differential input voltage SPEC comparison Rev.1.0 DDR2 and DDR3 SDRAM differential input voltage - Description of datasheet - DDR2 [ VID ] for differential input signals CK, CK/, DQS, DQS/, UDQS, UDQS/, LDQS,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 200PIN DDR2 400 SO-DIMM 256MB With 32Mx16 CL3 TS32MSQ64V4M Description Placement The TS32MSQ64V4M is a 32M x 64bits DDR2-400 SO-DIMM. The TS32MSQ64V4M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed


    Original     		PDF 200PIN 256MB 32Mx16 TS32MSQ64V4M TS32MSQ64V4M 64bits DDR2-400 32Mx16its 200-pin

    IS43DR81280B

    Abstract: IS46DR16640B IS43DR16640B-25DBL IS46DR16640B-3DBLA IS43DR16640B IS43DR16640B-3DBL
    Text: IS43/46DR81280B/L, IS43/46DR16640B/L PRELMINARY INFORMATION AUGUST 2012 1Gb x8, x16 DDR2 SDRAM FEATURES •               Clock frequency up to 400MHz 8 internal banks for concurrent operation


    Original     		PDF IS43/46DR81280B/L, IS43/46DR16640B/L 400MHz cycles/64 60ball 60-ball IS43DR81280B IS46DR16640B IS43DR16640B-25DBL IS46DR16640B-3DBLA IS43DR16640B IS43DR16640B-3DBL

    AM37xx

    Abstract: SPRS616F bt.656 to MIPI digital cvbs encoder 640 480 RGB mipi bridge Cortex-A8 MIPI E2 nand flash 683 Transistor
    Text: AM3715, AM3703 SPRS616F – JUNE 2010 – REVISED AUGUST 2011 www.ti.com AM3715, AM3703 Sitara ARM Microprocessors Check for Samples: AM3715, AM3703 1 AM3715, AM3703 Sitara ARM Microprocessors 1.1 Features 123456 • AM3715/03 Sitara ARM Microprocessors: – Compatible with OMAP 3 Architecture


    Original     		PDF AM3715, AM3703 SPRS616F AM3703 AM37xx SPRS616F bt.656 to MIPI digital cvbs encoder 640 480 RGB mipi bridge Cortex-A8 MIPI E2 nand flash 683 Transistor

    W9425G6JH

    Abstract: No abstract text available
    Text: W9425G6JH 4 M  4 BANKS  16 BITS DDR SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W9425G6JH

    Untitled

    Abstract: No abstract text available
    Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:


    Original     		PDF M2S1G64CBH4B5P M2S2G64CB88B5N M2S4G64CB8HB5N PC3-8500 PC3-10600 PC3-12800 DDR3-1066/1333/1600 128Mx16 256Mx8

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply


    Original     		PDF AS4DDR32M72PBG1 32Mx72 333Mbps 23mm-1 208-PBGA

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm


    Original     		PDF AS4DDR232M72PBG 32Mx72 AS4DDR232M72PBG

    18n5o

    Abstract: BA2N15 SGX530 PowerVR SGX530 0x4803 Ps3 MOTHERBOARD CIRCUIT diagram DDR2-800 AM38x 15F4 17 inch lcd monitor
    Text: AM3894 AM3892 www.ti.com SPRS681A – OCTOBER 2010 – REVISED MARCH 2011 AM389x Sitara ARM Microprocessors MPUs Check for Samples: AM3894, AM3892 1 Device Summary 1.1 Features • High-Performance Sitara ARM Microprocessors (MPUs) – ARM® Cortex™-A8 RISC MPU


    Original     		PDF AM3894 AM3892 SPRS681A AM389x AM3894, VFPv3-IEEE754 32K-Byte 256K-Byte 64K-Byte 18n5o BA2N15 SGX530 PowerVR SGX530 0x4803 Ps3 MOTHERBOARD CIRCUIT diagram DDR2-800 AM38x 15F4 17 inch lcd monitor

    EL 817 C108

    Abstract: HDMI I2C
    Text: AM3874, AM3872, AM3871 www.ti.com SPRS695A – SEPTEMBER 2011 – REVISED MARCH 2012 AM387x Sitara ARM Processors Check for Samples: AM3874, AM3872, AM3871 1 High-Performance System-on-Chip SoC 1.1 Features • High-Performance Sitara™ ARM® Processors


    Original     		PDF AM3874, AM3872, AM3871 SPRS695A AM387x 16/24/30-bit 16/24-bit EL 817 C108 HDMI I2C

    DM8148 GMII

    Abstract: SPRS647 TMS320DM8146 OPP166 TMS320DM814x GP321 lpddr4 implementing pcb layout on tms320dm814x amplifier HS 9004
    Text: TMS320DM8148, TMS320DM8147, TMS320DM8146 SPRS647C – MARCH 2011 – REVISED JANUARY 2012 www.ti.com TMS320DM814x DaVinci Digital Media Processors Check for Samples: TMS320DM8148, TMS320DM8147, TMS320DM8146 1 High-Performance System-on-Chip SoC 1.1 Features


    Original     		PDF TMS320DM8148, TMS320DM8147, TMS320DM8146 SPRS647C TMS320DM814x 32K-Byte DM8148 GMII SPRS647 TMS320DM8146 OPP166 GP321 lpddr4 implementing pcb layout on tms320dm814x amplifier HS 9004

    Untitled

    Abstract: No abstract text available
    Text: OMAP3515/03 Applications Processor www.ti.com SPRS505F – FEBRUARY 2008 – REVISED SEPTEMBER 2009 1 OMAP3515/03 Applications Processor 1.1 Features • • • OMAP3515/03 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • Up to 720-MHz ARM Cortex™-A8 Core


    Original     		PDF OMAP3515/03 SPRS505F 720-MHz OMAP3515

    M368L1624DTL

    Abstract: No abstract text available
    Text: M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 May. 2002 Rev. 0.1 May. 2002 M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE Revision History


    Original     		PDF M368L1624DTL 184pin 128MB 16Mx64 16Mx16 64-bit M368L1624DTL

    DDR2-667

    Abstract: PC2-5300 SSTL-18
    Text: NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 32Mx16 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module • 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2 SDRAM • Performance:


    Original     		PDF NT256T64UH4A1FY 256MB: 240pin 32Mx16 240-pin 32Mx64 84-ball DDR2-667 PC2-5300 SSTL-18

    NT5TU128M8DE

    Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE
    Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6


    Original     		PDF NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TB256M4DE NT5TB128M8DE NT5TB64M16DG -37B/-37BI DDR2-533 DDR2-667 DDR2-800 NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE

    nt5tu128m8de-ac

    Abstract: NT5TU64M16DG-AD NT5TU128M8DE-AD NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TU64M16DG-3C Nanya NT5TU64M16DG
    Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG 1Gb DDR2 SDRAM Preliminary Edition Features CAS Latency and Frequency Speed Sorts -37B DDR2 -533 -3C DDR2 -667 -AD DDR2 -800 -AC DDR2 -800 Units Bin CL-tRCD-TRP 4-4-4 5-5-5 6-6-6 5-5-5 tck max. Clock Frequency 266


    Original     		PDF NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG nt5tu128m8de-ac NT5TU64M16DG-AD NT5TU128M8DE-AD NT5TU64M16DG NT5TU64M16DG-3C Nanya NT5TU64M16DG

    NT5DS8M16FS-5T

    Abstract: NT5DS8M16FS-6K NT5DS8
    Text: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T


    Original     		PDF NT5DS8M16FT NT5DS8M16FS 128Mb NT5DS8M16FS-5T NT5DS8M16FS-6K NT5DS8

    NT5TU32M16AG-37B

    Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
    Text: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8


    Original     		PDF NT5TU128M4AB/NT5TU128M4AE NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE NT5TU32M16AF/NT5TU32M16AG /NT5TU32M16AS 512Mb NT5TU32M16AG-37B NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af

    Nanya nt5ds8m16fs

    Abstract: NT5DS8M16FS NT5DS8M16FT-5TI NT5DS8M16FS-5T DDR333 DDR400 NT5DS8M16 NT5DS8M16FT-6KI NT5DS8M16FT
    Text: NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8


    Original     		PDF NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb Nanya nt5ds8m16fs NT5DS8M16FS NT5DS8M16FT-5TI NT5DS8M16FS-5T DDR333 DDR400 NT5DS8M16 NT5DS8M16FT-6KI NT5DS8M16FT

    NT5TU32M16CG-BD

    Abstract: NT5TU32M16CG-be NT5TU64M8CE
    Text: NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Data-Strobes: Bidirectional, Differential • Programmable CAS Latency: 3,4,5,6 and 7 • 4 internal memory banks • Programmable Additive Latency: 0, 1, 2, 3, and 4


    Original     		PDF NT5TU128M4CE NT5TU64M8CE /NT5TU32M16CG 512Mb NT5TU32M16CG-BD NT5TU32M16CG-be

    NT5DS8M16FS-5T

    Abstract: NT5DS8M16FS-6K NT5DS8M16 NT5DS8M16FS
    Text: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T


    Original     		PDF NT5DS8M16FT NT5DS8M16FS 128Mb NT5DS8M16FS-5T NT5DS8M16FS-6K NT5DS8M16 NT5DS8M16FS

    NT5DS16M16BF-6K

    Abstract: NT5DS32M8BT NT5DS16M16BT-6K NT5DS16M16BT NT5DS64M4BT NT5DS32M
    Text: NT5DS64M4BT NT5DS32M8BT NT5DS16M16BT NT5DS64M4BF NT5DS32M8BF NT5DS16M16BF NT5DS64M4BS NT5DS32M8BS NT5DS16M16BS NT5DS64M4BG NT5DS32M8BG NT5DS16M16BG 256Mb DDR SDRAM Features • Data mask DM for write data • DLL aligns DQ and DQS transitions with CK transitions


    Original     		PDF NT5DS64M4BT NT5DS32M8BT NT5DS16M16BT NT5DS64M4BF NT5DS32M8BF NT5DS16M16BF NT5DS64M4BS NT5DS32M8BS NT5DS16M16BS NT5DS64M4BG NT5DS16M16BF-6K NT5DS32M8BT NT5DS16M16BT-6K NT5DS16M16BT NT5DS64M4BT NT5DS32M

    E3235

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59WM815/07/03BFT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM


    OCR Scan     		PDF TC59WM815/07/03BFT-70 304-WORDSX4BANKSX16-BITS 608-WORDSX4BANKSX8-BITS 216-WORDSX4BANKSX4-BITS TC59WM815BFT TC59WM807BFT TC59WM803BFT E3235

    lm814

    Abstract: ID32-001
    Text: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR


    OCR Scan     		PDF TC59LM814/06BFT-22 TC59LM814/06BFT TC59LM814BFT 304-words TC59LM806BFT LM814/06B FT-22 lm814 ID32-001