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    LH53B16P00 Search Results

    LH53B16P00 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LH53B16P00D Sharp EPROM Parallel Async Original PDF
    LH53B16P00N Sharp EPROM Parallel Async Original PDF

    LH53B16P00 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5252 F 1102

    Abstract: 42-PIN 44-PIN
    Text: PRELIMINARY LH53B16P00 FEATURES • 2,097,152 words x 8 bit organization Byte mode 1,048,576 words × 16 bit organization (Word mode) CMOS 16M (2M × 8/1M × 16) MaskProgrammable ROM With Page Mode PIN CONNECTIONS 42-PIN DIP TOP VIEW A18 1 42 A19 A17 2


    Original     		PDF LH53B16P00 42-PIN 42-pin, 600-mil 44-pin, 44SOP 5252 F 1102 44-PIN

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS 16M 2M x 8/1M × 16 MROM With Page Mode LH53B16P00 FEATURES • 2,097,152 words × 8 bit organization (Byte mode) 1,048,576 words × 16 bit organization (Word mode) PIN CONNECTIONS 42-PIN DIP TOP VIEW A18 1 42 A19 A17 2 41 A8 • Access time: 120 ns (MAX.)


    Original     		PDF LH53B16P00 42-pin, 600-mil 44-pin, LH53B16P00 16M-bit 42-PIN 44SOP

    AG40A

    Abstract: Z27D
    Text: PRELIMINARY LH53B16P00 FEATURES • 2,097,152 words x 8 bit organization Byte mode 1,048,576 words x 16 bit organization (Word mode) • Addressable page: 4 words or 8 bytes • Power consumption: Operating: 550 mW (MAX.) Standby: 1650 ^iW (MAX.) PIN CONNECTIONS


    OCR Scan     		PDF LH53B16P00 42-pin, 600-mil 44-pin, 42-PIN AG40A Z27D

    MB8316200

    Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
    Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S


    OCR Scan     		PDF 23C4000C 23C4100C 23C4200C 23V4000C KM23V41 KM23V41OOCET UPD23C4001EB UPD23C4000S HN62344B HN62444 MB8316200 uPD23C4000S TC533200 UPD23C4000 23C32000a 624116 HN62318/338B

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


    OCR Scan     		PDF LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


    OCR Scan     		PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    LH231G

    Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
    Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200


    OCR Scan     		PDF 28DIP 28DIP LH2389D LH23128D LH23286D LH236120 LH2310006D LH231G lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235

    132-6d

    Abstract: No abstract text available
    Text: PRELIMINARY L H 5 3 B 1 6 P PIN CONNECTIONS FEATURES • 2,097,152 words Byte mode 1,048,576 words (Word mode) CMOS 16M (2M X 8/1M X 16) MaskProgrammable ROM With Page Mode x 8 bit organization 42-PIN DIP x 16 bit organization • Access time: 120 ns (MAX.)


    OCR Scan     		PDF 42-PIN 42-pin, 600-mil 44-pin, LH53B16P00 16M-bit 44SOP 132-6d

    flash 64m

    Abstract: No abstract text available
    Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161


    OCR Scan     		PDF 100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS 16M 2M x 8/1M x 16 MROM With Page Mode L H 5 3 B 1 6 P 0 0 FEATURES • 2,097,152 words x 8 bit organization (Byte mode) 1,048,576 words x 16 bit organization (Word mode) • Access time: 120 ns (MAX.) Page mode: 50 ns (MAX.) PIN CONNECTIONS


    OCR Scan     		PDF 42-pin, 600-mil 44-pin, 44SOP OP044-P-0600)

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


    OCR Scan     		PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES ★ Capacity Configuration * 1 C om patible with 4 M -bit flash m em ories from A d vanced M icro D evices, Inc. * 2 C om patible with 4 M -bit flash m em ories from Intel Corp. A c c e s s tim e Under development MEMORIES ★ Under development Access time


    OCR Scan     		PDF 28kx8 128kx 256kx LH53H4000 LH532600 LH532000B-1 LH531000B LH532000B LH534600C LH534P00B

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


    OCR Scan     		PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    48 tsop flash pinout

    Abstract: LH23512
    Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)


    OCR Scan     		PDF LH2369 LH23126 LH23255 LH53259 LH23512 LH53517 LH53H0900 LH531VOO LH530800A LH530800A-Y 48 tsop flash pinout

    LHMD09

    Abstract: No abstract text available
    Text: MEMORIES ★ U nderdevelopm ent • Page Mode Specification Mask ROM Specific Pinout • 3 .3 V operation B it C apacity configuration 8M 16M x 8/x 16 x 8/x 16 x 16/x 32 x 8/x 16 32M x 16/x 32 64M x 16/x 32 128M x 16/x 32 Model No. LH53BV8600D/N LH53BV8600T


    OCR Scan     		PDF LH-5D86XX LH-5D80XX LH-ME78XX LH-MD79XX LH-ME58XX LH-ME53XX LH-MD50XX LH-MD57XX LH-MD09XX LH-MD19XX LHMD09